• 제목/요약/키워드: GeSi Alloy

검색결과 40건 처리시간 0.023초

Computer-simulation with Different Types of Bandgap Profiling for Amorphous Silicon Germanium Thin Films Solar Cells

  • 조재현;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.320-320
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    • 2014
  • Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

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이온선보조증착에 의한 Si(100)기판에 정합성장된 $Si_{0.5}Ge_{0.5}$박막의 성장방식 (Growth mode of epitaxial $Si_{0.5}Ge_{0.5}$ alloy layer grown on Si(100) by ion beam assisted deposition)

  • 박상욱;백홍구
    • 한국재료학회지
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    • 제5권3호
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    • pp.297-309
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    • 1995
  • 본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

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Si 및Si$_{0.7}$Ge$_{0.3}$ 박막의 표현형태 및 조도의 전개 (Evolution of surface morphology and roughness in Si and $_{0.7}$Ge$_{0.3}$ thin fimls)

  • 이내웅
    • 한국표면공학회지
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    • 제31권6호
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    • pp.345-358
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    • 1998
  • The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

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$SiO_2$위에 MBE(Moleculat Beam Epitaxy)로 증착한 비정질 ${Si_{1-x}}{Ge_x)$박막의 결정화거동 (Crytallization Behavior of Amorphous ${Si_{1-x}}{Ge_x)$ Films Deposited on $SiO_2$ by Molecular Beam Epitaxy(MBE))

  • 황장원;황장원;김진원;김기범;이승창;김창수
    • 한국재료학회지
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    • 제4권8호
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    • pp.895-905
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    • 1994
  • 비정질 $Si_{1-x}Ge_{x}$(X=0, 0.14, 0.34, 0.53)합금박막의 결정화거동을 X-ray diffractometry(XRD)와 투과전자현미경(transmission electron microscopy, TEM)을 이용하여 조사하였다. 비정질 박막은 열산화막(thermal oxide, $SiO_{2}$)이 입혀진 Si기판위에 MBE(Molecular Beam Epitaxy)를 이용하여 $300^{\circ}C$에서 증착하였으며 각 Ge조성에 해당하는 기편들을 $500^{\circ}C$ ~ $625^{\circ}C$에서 열처리한 다음 XRD를 이용하여 결정화분율과 결정화후 박막의 우선순방위(texture)경향ㅇ르 조사하였다. 또한 TEM을 사용하여 열처리한 박막의 미세구조를 분석하였다. XRD분석결과 박막내의 Ge함량의 증가는 결정화에 대한 열처리시간을 크게 감소시키는 것으로 밝혀졌다. 또한 결정화후 강한(111) 우선방위를 나타내는 Si박막과는 달리 $Si_{1-x}Ge_{x}$합금은 (311)우선방위를 가지는 것을 알았으며 이는 비정질 Si박막과 $Si_{1-x}Ge_{x}$박막의 결정화기구에 현저한 차이가 있음을 암시한다. TEM관찰에서, 순수한 Si박막은 결정화후 결정립이 타원형이나 수지상(dendrite)형태를 취하고 있었으며 결정립내부에 미페쌍정이나 적층결함들의 많은 결정결함들이 존재하고, 결정립의 성장이 이들 결함을 따라 우선적으로 성장함을 알 수 있었다. 반면에 $Si_{0.47}Ge_{0.53}$의 경우에서는 결정립모양이 원형에 가까운 동축정(dquiaxed)형상을 하며 결정립내부의 결함밀도도 매우 낮았다. 특히 Si에서 보았던 결정립성장의 방향성은 관찰되지 않았다. 이상의 결과에서 비정질 $Si_{1-x}Ge_{x}$(합금박막의 결정화는 Ge이 포함되지 않은 순수한 Si의 twin assisted growth mode에서 Ge 함량의 증가에 따라 \ulcorner향성이 없는 random growth mode로 전개되어간다고 결론지을수 있다.

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Electronic Structures of Giant Magnetocaloric $Gd_5Si_2Ge_2$ Alloy

  • Rhee, Joo-Yull
    • Journal of Korean Vacuum Science & Technology
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    • 제6권4호
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    • pp.153-157
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    • 2002
  • The electronic structures of Gd$_{5}$Si$_2$Ge$_2$ compound, which has a giant magnetocaloric effect, in the monoclinic and orthorhombic phases were calculated using the tight-binding linear-muffin-tin-orbital method within the atomic-sphere approximation. The calculated total energies of the monoclinic and orthorhombic structures in the paramagnetic phase confirm that the orthorhombic structure is more stable than monoclinic structure. The density of states (DOS) at the Fermi level of the orthorhombic phase is higher than that of the monoclinic phase in the paramagnetic phase, fulfilling the Stoner criterion. The calculated charge density verified the breaking of Ge(Si)-Ge(Si) bonding in the basal plane upon the orthorhombic-monoclinic phase transition. The DOS curve fairly well reproduces the photoemission spectrum.m.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • 황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Integrated Nano Optoelectronics

  • Jo, Moon-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.117-117
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    • 2012
  • Si:Ge alloy semiconductor nanocrystals (NCs) offer challenging opportunities for integrated optoelectronics/optoplasmonics, since they potentially allow unprecedentedly strong light-matter interaction in the wavelength range of the optical communication. In this talk, we discuss the recent research efforts of my laboratory to develop optoelectronic components based on individual group IV NCs. We present experimental demonstration of the individual NC optoelectronic devices, including broadband Si:Ge nanowire (NW) photodetectors, intra NW p-n diodes, Ge NC electrooptical modulators and near-field plasmonic NW detectors, where the unique size effects at the nanometer scales commonly manifest themselves. In particular, we demonstrated a scanning photocurrent imaging technique to investigate dynamics of photocarriers in individual Si:Ge NWs, which provides spatially and spectrally resolved local information without ensemble average. Our observations represent inherent size-effects of internal gain in semiconductor NCs, thereby provide a new insight into nano optoplasmonics.

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In-situ ellipsometry를 사용한 광기록매체용 Ge-Sb-Te 다층박막성장의 실시간 제어 (Real time control of the growth of Ge-Sb-Te multi-layer film as an optical recording media using in-situ ellipsometry)

  • 김종혁;이학철;김상준;김상열;안성혁;원영희
    • 한국광학회지
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    • 제13권3호
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    • pp.215-222
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    • 2002
  • 광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

B2 구조 FeX(X = Al, Si, Ni, Ga, Ge, Sn) 합금의 자기변형에 대한 제일원리계산 (Magnetostriction of B2-structured FeX (X = Al, Si, Ni, Ga, Ge, and Sn) Alloys: A First-principles Study)

  • 이선철;;권오룡;홍순철
    • 한국자기학회지
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    • 제23권4호
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    • pp.117-121
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    • 2013
  • 본 연구에서는 대표적인 강자성 금속인 Fe에 비자성 원소가 치환된 비교적 단순한 B2 구조의 FeX(X = Al, Si, Ni, Ga, Ge, Sn) 합금의 자기변형계수를 제일원리계산으로 수행하여 Fe 기반 합금이 희토류 원소 기반 자기변형 물질인 Terfenol을 대체할 수 있는 가능성을 탐색하였다. 계산방법으로 자성 연구에 가장 적합한 것으로 알려져 있는 총퍼텐셜 선형보강 평면파(Full-potential Linearized Augmented Plane Wave; FLAPW) 방법을 사용하였으며 일반화 물매근사(generalized gradient approximation: GGA)을 도입하여 전자 상호간의 교환-상관 퍼텐셜을 기술하였다. B2 구조의 FeX(X = Al, Si, Ni, Ga, Ge, Sn)의 합금들 중에 FeSi와 FeGe은 비자성 상태가, 그 외 나머지 합금은 강자성 상태가 안정된 것으로 계산되었다. FeAl, FeNi, FeGa, FeSn의 자기변형계수 는 각각 -5, +6, -84, -522ppm으로 계산되어 FeSn은 큰 자기변형을 가질 수도 있음을 예측하였다.

NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석 (Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$)

  • 윤장근;오순영;황빈봉;김용진;지희환;김용구;차한섭;허상범;이종근;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.391-394
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    • 2004
  • In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

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