• Journal of Veterinary Clinics
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• v.23 no.4
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• pp.416-420
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• 2006

Compare to testing sera individually, pooled-serum testing has considered as a cost-effective method, particularly on a large population-based seroprevalence studies. This study was to determine the relationship between individual sera and pooled sera titers for detection of avian infectious bronchitis virus (IBV) and to evaluate suitability of pooled sera by comparing prevalences estimated from both samples. A total of 5,000 individual samples were collected from 500 flocks in Chungcheong, Gyunsgi, and Kangwon provinces between January 2005 and February 2006. Ten samples were randomly selected from each flock. Five-hundred pooled sera were prepared by mixing equal amount of each 10 individual serum from the original samples. IBV antibody titers were measured by hemagglutination inhibition (HI) test. The least squares regression analysis was performed to construct equation between pooled and mean individual titers. To determine whether the flock is infected 4 arbitrary criteria were used: detection of at least 1 chicken with HI titer ${\ge}$ 9 (criterion 1), detection of at least 2 samples with HI titer ${\ge}$9 (criterion 2), detection of at least 1 sample with HI titer ${\ge}$ 10 (criterion 3), and filially detection of at least 1 sample with HI titer ${\ge}$ 11 (criterion 4). The receiver operating characteristic (ROC) curve was used to examine the cut-off points of pooled titers showing optimal diagnostic accuracy. The area under the curve (AUC), sensitivities (Se), specificities (Sp), and positive (PPV) and negative (NPV) predictive values were calculated. The regression equation between pooled titers (pool) and mean individual titers (mean) was: $pool= 1.2498+0.8952{\times}mean$, with coefficient of determination of 87% (p< 0.0001). The optimal cut-off points of pooled titers were titer 8 for criterion 1 (AUC=0.975, Se=0.883, Sp=0.959, PPV=0.985, NPV=0.728), titer 8 for criterion 2 (AUC=0.969, Se=0.954, Sp=0.855, PPV=0.926, NPV=0.907), titer 9 for criterion 3 (AUC=0.970, Se=0.836, Sp=0.967, PPV=0.978, NPV=0.772), and titer 9 for criterion 4 (AUC= 0.946, Se=0.928, Sp=0.843, PPV=0.857, NPV=0.921). The difference of 'prevalence estimated by individual and pooled sample showed a minimum of 2% for criteria 2 and a maximum of 9.1:% for criteria 3. These results indicate that the use of pooled sera in HI test for screening IBV infection in laying hen flocks is considered as a cost-effective method of testing large numbers of samples with high diagnostic accuracy.

• Korean Journal of Food Science and Technology
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• v.53 no.3
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• pp.290-295
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• 2021

This study investigated the antioxidant effects of complex extracts from pine needles (PN), green tea (GT), and sea buckthorn leaves (SL). Measurement of total polyphenol and flavonoid content, DPPH radical scavenging activity (DPPH), ABTS⁺ radical scavenging activity (ABTS), and reducing power (RP), showed that SL extract (SE) had the highest values. The superoxide radical scavenging activity (SSA) and nitrite scavenging activity (NSA) were the highest in the GT extract (GE). In most experiments, the PN extract (PE) showed higher activity in complex extracts than in single extracts. The combination of GT and SL led to a higher activity than that exhibited by GT (DPPH and ABTS at 300 ppm, RP at 100 and 500 ppm) and SL (SSA at 100 ppm and NSA at 300 ppm) alone. These results suggest that the combination of PE, GE, and SE may be a useful functional food material in the food industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.67-68
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• 2009

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.50-53
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• 1995

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.478-478
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• 2013

Resistance-change Random Access Memory (ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.123-124
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.533-537
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• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Bulletin of the Korean Chemical Society
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• v.23 no.10
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• pp.1389-1393
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• 2002

The non-spectroscopic interference effects that occurred in inductively coupled plasma/mass spectrometry were studied for Ge, As and Se in human urine and serum. Many biological samples contain Na, K, Cl and organic compounds, which may cause the enhancement and depression on the analyte signal. The effect of 1% concomitant elements such as N, Cl, S, P, C, Na, and K on a 100 ㎍/L germanium, arsenic and selenium signal has been investigated by ICP/MS. The interference effects were not in the same direction. It appeared that concomitant elements such as Cl, S, and C induce an enhancement effect, whereas N and P did not show any significant effect. And, Na and K caused a depression. We have found a link between the abundance of analytes and the ionization potential of concomitant elements (eV), except carbon and nitrogen.