• Journal of Korean Ophthalmic Optics Society
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• v.2 no.1
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• pp.9-16
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• 1997

Ferroelectric $Pb_5Ge_{3-x}Ti_xO_{11}$(x=0, 0.015, 0.021, 0.03) single crystals were obtained from the melt by the Czochralski method. Grown crystals were pale brownish yellow and fully transparent. The dielectric relaxation of the $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals has been studied in the frequency range from 100 Hz to 10 MHz between $20^{\circ}C$ and $600^{\circ}C$. From the results of the these measurements. the temperature of the permittivity maximum was shifted to low temperature with increasing Ti content and the permittivity maximum decreased with increasing Ti content. The frequency dependent dielectric response of $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals exhibits a Debye type relaxation, with a distribution of relaxation times. Dielectric behavior is characteristic of carrier-dominated response.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.41-45
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• 2010

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.212-212
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• 2012

The Coverage dependent attachment of multifunctional groups included in threonine molecules adsorbed to Ge (100)$-2{\times}1$ surface was investigated using core-level photoemission spectroscopy (CLPES) and density functional theory (DFT) calculations. The core-level spectra at a low coverage indicated that the both carboxyl and amine groups participated in the bonding with the Ge (100) surface by "O-H dissociated and N-dative bonded structure". However, at high coverage level, additional adsorption geometry of "O-H dissociation bonded structure" appeared possibly to minimize the steric hindrance between adsorbed molecules. Moreover, the C 1s, N 1s, and O 1s core level spectra confirmed that the carboxyl oxygen is more competitive against the hydroxymethyl oxygen in the adsorption reaction. The adsorption energies calculated using DFT methods suggested that four of six adsorption structures were plausible. These structures were the "O-H dissociated-N dative bonded structure", the "O-H dissociation bonded structure", the "Om-H dissociated-N dative bonded structure", and the "Om-H dissociation bonded structure" (where Om indicates the hydroxymethyl oxygen). These structures are equally likely, according to the adsorption energies alone. Conclusively, we investigate in threonine on Ge (100) surface system that the "O-H dissociated-N dative bonded structure" and the "O-H dissociation bonded structure" are preferred at low coverage and high coverage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.453-453
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• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1055-1060
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• 2013

The adsorption structures of threonine on the Ge(100) surface were investigated using core-level photoemission spectroscopy (CLPES) in conjunction with density functional theory (DFT) calculations. CLPES measurements were performed to identify the experimentally preferred adsorption structure. The preferred structure indicated the relative reactivities of the carboxyl and hydroxymethyl groups as electron donors to the Ge(100) surface during adsorption. The core-level C 1s, N 1s, and O 1s CLPES spectra indicated that the carboxyl oxygen competed more strongly with the hydroxymethyl oxygen during the adsorption reaction. Three among six possible adsorption structures were identified as energetically favorable using DFT calculation methods that considered the inter- and intra-bonding configurations upon adsorption onto the Ge(100) surface. These structures were O-H dissociated N dative inter bonding, O-H dissociated N dative intra bonding, O-H dissociation bonding. One of the adsorption structures: O-H dissociated N dative inter bonding was predicted to be stable in light of the transition state energies. We thus confirmed that the most favorable adsorption structure is the O-H dissociated N dative-inter bonding structure using CLPES and DFT calculation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.192-192
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여co-sputtering 방법으로 성장시킨 고이동도를 갖는Ge-doped $In_2O_3$In2O3 (IGO) 박막의 전기적, 광학적, 구조적 특성을 평가하고, 이를 유기태양전지와 유기발광다이오드에 적용함으로써 고이동도 IGO 투명전극의 소자 적용가능성을 타진하였다. GeO2 타겟에 인가되는 도핑 Power와 급속열처리 온도가 30 W, $500^{\circ}C$일 때, 최적화 된 IGO 박막으로부터 $2.8{\times}10^{-4}$ Ohm-cm의 낮은 비저항과 86.9% (550 nm)의 높은 투과도를 확보하였다. 뿐만 아니라 Near Infra-red (750~1,200 nm) 영역에서의 IGO투명전극의 광투과율이 결정질의 ITO보다 높은(약15%) 투과도를 보이는 것을 통해 IGO박막의 높은 LAS (Lewis Acid Strength) 값을 가지는 Ge 원소의 도핑이 NIR 영역의 광투과율 향상에 미치는 영향을 확인할 수 있었다. 최적 조건의 IGO 박막을 적용하여 Fill Factor 67.38%, Short circuit current density 8.43 mA/cm2, open circuit voltage 0.60 V, efficiency 3.44%의 유기태양전지 및 19.24%의 외부양자효율을 갖는 유기발광다이오드를 제작함으로써 결정질 ITO 전극(20.05%)을 대체할 수 있는 고투과, 고이동도 IGO 투명 전극 및 이를 이용한 광전소자 적용 가능성을 타진하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.250-254
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• 2023

In this study, Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glasses with high transmittance in mid-infrared region and high refractive indices were successfully synthesized. The relationship between glass properties and glass composition was analyzed. In Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glass system, as increasing TeO₂ concentration, the refractive index increases and the glass transition temperature decreases. In addition, as increasing BaO concentration, the refractive index increases without decrease of Abbe number. The IR-cut off wavelength shifted to the longer wavelength with increasing TeO₂ and BaO contents due to their large molecular weight. The glass transition temperature significantly decreases when BaO was replaced with Li₂O.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.215-215
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• 2011

The bonding configuration and adsorption stability of alanine and leucine adsorbed on Ge(100)-2${\times}$1 surface were investigated and compared using core-level photoemission spectroscopy (CLPES) and density functional theory (DFT) calculations. The bonding configuration, stability, and adsorption energies were evaluated for two different coverage levels. In both cases, the C 1s, N 1s, and O 1s core-level spectra at a low coverage (0.30 ML) indicated that the carboxyl and amine groups participated in bonding with the Ge(100) surface in an "O-H dissociated-N dative bonded structure". At high coverage levels (0.60 ML), both this structure and an "O-H dissociation bonded structure" were present. As a result, we found that alanine adsorbs more easily (lower adsorption energy) than leucine on Ge(100) surfaces due to less steric hindrance of side chain.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.78-78
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• 2010

The Adsorption structures of phenylalanine on Ge(100) surface have been investigated as a function of coverage using high-resolution photoemission spectroscopy (HRPES) and density functional (DFT) calculation. To converge these experimental and theoretical conclusion, we systematically performed HRCLPES measurements and DFT calculation for various coverage in the adsorption structures of phenylalanine molecules on the Ge(100) surface. In this study, we found two different adsorption structure as a function of coverage in phenylalanine on Ge(100), monitoring three core level spectra (Ge 3d, C 1s, N 1s, and O 1s) using HRPES Through analysis of the binding energies, we confirmed that O-H dissociated and N dative-bonded structure emerges at low coverage (0.10 ML), which is the same to the result of glycine and alanine on Ge(100) system, whereas O-H dissociation structure also appears at higher coverage. Moreover, we observed the shape of phenyl group being included in phenylalanine is changed from flat to tilting structure at final state using DFT calculation. Through the spectral analysis for phenylalanine, we will demonstrate variation of coverage dependent structural change for phenylalanine on Ge(100) surface using experimental (HRPES) and theoretical studies (DFT calculation).

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.