• Korean Journal of Food Science and Technology
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• v.48 no.6
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• pp.597-603
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• 2016

This study aimed to explore the protective effect of Gastrodia elata (GE) in an HCl/ethanol induced acute gastritis model by differing the steaming time. The samples GE1 (GE by steaming for 1 time) and GE9 (GE by steaming for 9 times), were selected based on the results of HPLC analysis, free radical scavenging activities, and total phenol and flavonoid contents. To evaluate the anti-inflammatory effect of GE, ICR mice were divided into 5 groups; normal mice (Nor), gastritic mice with distilled water (Con), gastritic mice with 100 mg/kg GE1, gastritic mice with 100 mg/kg GE9 and gastritic mice with 10 mg/kg sucralfate (SC). HCl/ethanol-induced gastric mucosal injury was markedly improved by GE9 treatment as observed during histological evaluation. The increased reactive oxygen species levels in the serum were diminished by GE9 treatment. Furthermore, peroxynitrite levels of the stomach tissue were decreased in the GE9-treated group. The analyses of stomach proteins indicated that GE9 treatment effectively reduced inflammatory cytokine levels as compared to that by GE1 treatment. These results suggest that GE9 improves health during acute gastritis.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.993-995
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• 1998

We fabricated fiber gratings with three different Ge-doped fibers exposed to 60atm pressure of Hz gas at 90"C for different times and studied the effects of Ge-doping concentration and $H_2$ loading time on the growth of gratings. According to experiments. the growing effect of hydrogen loading on high Ge-doped fiber was great.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.189.2-189.2
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• 2014

The most stable adsorption structures and energies of four tautomerized forms (keto-1, enol-1, keto-2, and enol-2) of 3-methyl 5-pyrazolone (MP) adsorbed on Ge(100) surfaces have been investigated by Density Functional Theory (DFT) calculation method. Among its four tautomerized forms, we confirmed three tautomerized forms except keto-1 form show the stable adsorption structures when they adsorbed on the Ge(100)-$2{\times}1$ surface as we calculate the respective stable adsorption structures, activation barrier, transition state energy, and reaction pathways. Moreover, among three possible adsorption structures, we acquired that enol-2 form has most stable adsorption structure with O-H dissociated N-H dissociation bonding structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.142-146
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• 1999

CeO$_2$ buffer layers and in-situ YSa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown by pulsed laser deposition method on R-plane sapphire substrates. Superconducting properties and surface morphologies of YBCO thin films exhibit strong dependence on the crystallinity of CeO$_2$ buffer layer. The best a-axis oriented CeO$_2$ buffer layers could be grown at 800 $^{\circ}C$ of deposition temperature, 1.5 J/ cm$^2$ of laser energy density and 50 mTorr of oxygen pressure. The YBCO thin films on the a-axis CeO$_2$ buffer layer have Tc (R=0) ${\ge}$ 89.5 K, ${\delta}$Tc ${\sim}$ 0.5 K, and Jc ${\ge}$ 3.2 ${\times}$ 10$^6$ A/ cm$^2$ at 77 K.

• The Journal of Korean Medicine
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• v.23 no.2
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• pp.125-138
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• 2002

Learning and memory are essential requirements for every living organism in order to cope with environmental demands, and cholinergic systems are known to be involved in learning and memory. Scutellaria baicalensis (SB) and Gastrodia elata (GE) as a traditional Oriental medicine have been clinically used to treat or prevent memory deficits, including Alzheimer's disease. In the present study, we investigated the effects of SB and GE on learning and memory in the Morris water maze task and the central cholinergic system of the rats with excitotoxic medial septum lesions. In the water maze test, the animals were trained to find a platform at a fixed position over 6 days and then received a 60-s probe trial in which the platform was removed from the pool on the 7th day. Ibotenic lesion of the medial septum (MS) impaired their performance in the maze test (latency of acquisition test on the 3rd day, $27.6{\pm}$4.4 sec vs. $61.7{\pm}17.7$ sec; retention test, $7.9{\pm}1.3%$ vs. $5.7{\pm}1.0%$: sharn vs. ibotenic lesioned groups, respectively) and reduced choline acetyltransferase (ChAT) - immunoreactivity in the MS and the hippocarnpus, which is a marker for degeneration of the central cholinergic system (number of cells, $21.1{\pm}1.1$ vs. $13.2{\pm}1.3$: sham vs. ibotenic lesioned group). Daily administrations of SB (100mg/kg, p.o.) and GE (100mg/kg, p.o.) for 21 consecutive days produced significant reversals of ibotenic acid-induced deficit in learning and memory. These treatments also reduced the loss of cholinergic immunoreactivity in the MS and the hippocarnpus induced by ibotenic acid. These results demonstrated that SB and GE ameliorated learning and memory deficits through effects on the central nervous system, partly through effect on the acetylcholine system. Our studies suggest an evidence of SB and GE as treatment for Alzheimer's disease.

• Korean Journal of Environmental Agriculture
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• v.24 no.1
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• pp.40-44
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• 2005

In order to obtain the basic information for agricultural utilization of Germanium(Ge), the growth characteristics and Ge absorption of rice plant were investigated with different Ge concentration in soil. Ge concentrations were treated with 0, 2.5, 5.0 7.5 and 10.0 mg/kg in pot(1/5,000a), respectively. As higher the Ge concentration in soil, the Ge absorption amount in straw, husk and brown rice were increased. But the yields were decreased with the increase of Ge phytotoxicity. When rice plant was grown more than 2.5 mg/kg Ge(as $GeO_2$) in the soil, growth was inhibited by germanium phytotoxicity and necrosis spots were observed in the rice leaf blades. Therefore the optimum concentration of Ge was less than 2.5 mg/kg in rice plant. When rice plant was cultivated on soil supplemented with 2.5 mg/kg Ge, Ge content in straw, husk and brown rice was 103.4, 30.2 and 3.02 mg/kg, respectively. The Ge content in plant was high in the order of straw > husk > brown rice. Most of the amino acids in rice were increased with the increase of Ge treatment, besides, total amino acid contents also increased.

• Korean Journal of Medicinal Crop Science
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• v.3 no.1
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• pp.45-49
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• 1995

This study was carried out to examine the germanium contents of Angelica keiskei Koidz. and A. acutiloba Kitagawa and to intend to increase its contents while those leaf explants were culturing on MS medium supplemented with organic and inorganic germanium. Ge content of Agelica keiskei Koidz. was 2.1 times higher than that of A. acutiloba Kitagawa. Digestion was done quickly at high temperature, but Ge content was decreased. Callus formation of A. acutiloba Kitagawa was better than that of A. keiskei Koidz. Callus formation of both plants was good in order of pH 5.7, pH 5.4, and pH 6.0. But shoots from callus were formed frequently in A. keiskei Koidz., especially at pH 5.7. Callus formation of both plants was good up to 5 ppm of inorganic ($germanium(GeO_2),$ retarded at 10 ppm, and rarely formed at 100 ppm, but was good up to 10ppm of organic germanium retarded at 50 ppm and formed some-what even at 100 ppm.