• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.132-132
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• 2010

3-5족 화합물 반도체는 직접천이형 반도체이며, 여러가지 우수한 특성으로 인하여 고효율의 태양전지물질로 각광을 받고 있다. 또한 3중접합 구조를 이용한 집광형태양전지의 경우, 40% 이상의 높은 효율을 보인다고 보고 되고 있다. 이러한 고효율 태양전지를 실리콘 기판위에 성장할 경우, 대면적에서의 태양전지제작이 가능해지며, 단가절감이 가능할 것이라고 예상된다. 하지만, 하부셀로 사용되는 게르마늄과 실리콘의 4.2%의 격자상수차이로 인하여, 고품질의 게르마늄 박막을 실리콘 기판위에 성장하는 데에 있어서 많은 문제점이 있으며, 이러한 문제점을 극복하기 위하여, 저온에서 성장한 게르마늄 박막을 완충층으로 사용하는 2단계 성장법이 제안되었다. 하지만, 2단계 성장법에서 저온 완충막의 성장조건이 게르마늄 박막에 미치는 영향은 명확하지 않다. 본 연구팀은 초고진공 화학기상증착법을 이용하여 순수 게르마늄 박막을 실리콘 기판 위에 성장하였으며, 저온 완충막의 두께를 20 nm에서 120 nm까지 변화시켜서, 완충막의 두께가 게르마늄박막에 미치는 영향에 대해서 연구해 보았다. 그 결과, 40 nm이하의 두께를 갖는 완충막을 사용할 경우, 박막 내부에 실리콘 게르마늄을 형성하면서, 거친 표면이 형성되었다. 반면에, 40 nm보다 두꺼운 완충막을 사용할 경우 평탄한 표면을 갖는 순수게르마늄박막이 형성되었다. 이를 통해서, 순수 게르마늄박막 성장을 위해서는 일정 두께 이상의 저온 완충막이 사용되어야함을 알 수 있었다. 또한 게르마늄박막의 관통 전위 밀도를 분석해 본 결과 완충막의 두께가 80 nm까지 두꺼워짐에 따라서 초기에는 관통전위밀도가 $1.2\;{\times}\;10^6\;cm^{-2}$ 까지 감소하는 경향을 보였으나, 완충막의 두께가 더욱 증가할 경우 관통전위밀도가 증가하였다. 이러한 결과를 바탕으로 저온 완충막의 두께를 조절함으로써 최적화된 게르마늄의 성장이 가능함을 확인할 수 있었다.

• The Korean Journal of Nuclear Medicine Technology
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• v.27 no.2
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• pp.111-127
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• 2023

Purpose: Gallium-68 (⁶⁸Ga) is increasingly used in nuclear medicine imaging for various conditions such as lymphoma and neuroendocrine tumors by labeling tracers like Prostate Specific Membrane Antigen (PSMA) and DOTA-TOC. However, compared to Fluorine-18 (¹⁸F) used in conventional nuclear medicine imaging, ⁶⁸Ga has lower spatial resolution and relatively higher Signal to Background Ratio (SBR). Therefore, this study aimed to investigate the optimized parameters and reconstruction methods for PET/CT imaging using the ⁶⁸Ga radiotracer through model-based image evaluation. Materials and Methods: Based on clinical images of ⁶⁸Ga-PSMA PET/CT, a NEMA/IEC 2008 PET phantom model was prepared with a Hot vs Background (H/B) ratio of 10:1. Images were acquired for 9 minutes in list mode using DMIDR (GE, Milwaukee WI, USA). Subsequently, reconstructions were performed for 1 to 8 minutes using OS-EM (Ordered Subset Expectation Maximization) + TOF (Time of Flight) + Sharp IR (VPFX-S), and BSREM (Block Sequential Regularized Expectation Maximization) + TOF + Sharp IR (QCFX-S-400), followed by comparative evaluation. Based on the previous experimental results, images were reconstructed for BSREM + TOF + Sharp IR / 2 minutes (QCFX-S-2min) with varying β-strength values from 100 to 700. The image quality was evaluated using AMIDE (freeware, Ver.1.0.1) and Advanced Workstation (GE, USA). Results: Images reconstructed with QCFX-S-400 showed relatively higher values for SNR (Signal to Noise Ratio), CNR (Contrast to Noise Ratio), count, RC (Recovery Coefficient), and SUV (Standardized Uptake Value) compared to VPFX-S. SNR, CNR, and SUV exhibited the highest values at 2 minutes/bed acquisition time. RC showed the highest values for a 10 mm sphere at 2 minutes/bed acquisition time. For small spheres of 10 mm and 13 mm, an inverse relationship between β-strength increase and count was observed. SNR and CNR peaked at β-strength 400 and then decreased, while SUV and RC exhibited a normal distribution based on sphere size for β-strength values of 400 and above. Conclusion: Based on the experiments, PET/CT imaging using the ⁶⁸Ga radiotracer yielded the most favorable quantitative and qualitative results with a 2 minutes/bed acquisition time and BSREM reconstruction, particularly when applying β-strength 400. The application of BSREM can enhance accurate quantification and image quality in ⁶⁸Ga PET/CT imaging, and an optimization process tailored to each institution's imaging objectives appears necessary.

• Clinical and Experimental Reproductive Medicine
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• v.24 no.2
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• pp.217-223
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• 1997

This study was performed to determine if women with day 3 serum inhibin-B concentrations <45pg/ml (conversion factor to SI unit, 1.00) demonstrate a poor response to ovulation induction and assisted reproductive technology outcome to women with inhibin-B${\ge}45pg$/ml, independant of day 3 FSH, E2 and patient age. From Jan 1996 to Dec 1996, 16 volunteers patients who underwent 25 IVF cycles with luteal phase GnRH agonist suppression and HMG stimulation were allocated to the study group. We evaluated day 3 serum inhibin-B, FSH, E2, peak E2, cancellation rate per initiated cycle (%) and clinical pregnancy rate per initiated cycle (%) according to the above two groups and independent of patient age, day 3 FSH, day 3 E2 and all of above combined. Women with day 3 serum inhibin-B${\ge}45pg$/ml demonstrated higher average day 3 inhibin-B level, clinical pregnancy rate per initiated cycle ($20.3{\pm}2.5$ pg/ml vs $80.9{\pm}5.0$ pg/ml, p<0.05; 24.8% vs 8.5%, p<0.05) and lower day 3 FSH level, cancellation rate per initiated cycle ($6.9{\pm}0.3$ mIU/ml vs $8.5{\pm}0.5$ mIU/ml, p<0.05; 1.5% vs 9.0%, p<0.05). Women with day 3 serum inhibin${\ge}45pg$/ml and age<40 year demonstrated higher pregnancy rate per initiated cycle (28.2% vs 7.4%, p<0.05) and lows. day 3 FSH level, cancellation rate per initiated cycle ($6.9{\pm}0.5$ mIU/ml vs $8.2{\pm}0.7$ mIU/ml, p<0.05; 1.0% vs 9.0%, p<0.05). Women with day 3 serum inhibin${\ge}45pg$/ml and day 3 FSH<15mIU/ml demonstrated higher pregnancy rate per initiated cycle (33.5% vs 9.5%, p<0.05) and lower day 3 FSH level, cancellation rate per initiated cycle ($7.7{\pm}0.2$ mIU/ml vs $8.5{\pm}0.5$ mIU/ml, p<0.05; 1.5% vs 10.0%, p<0.05). Women with day 3 serum inhibin${\ge}45pg$/ml and day 3 E2<50pg/ml demonstrated higher pregnancy rate per initiated cycle (30.0% vs 9.5%, p<0.05) and lower cancellation rate per initiated cycle (1.5% vs 9.5%, p<0.05). Women with day 3 serum inhibin${\ge}45pg$/ml, age<40 year, day 3 FSH<15mIU/ml and day 3 E2<50pg/ml demonstrated higher pregnancy rate per initiated cycle (30.0% vs 10.8%, p<0.05) and lower day 3 FSH level, cancellation rate per initiated cycle ($6.8{\pm}0.6$ mIU/ml vs $8.4{\pm}0.9$ mIU/ml, p<0.05; 1.5% vs 7.8%, p<0.05). Therefore women with low day 3 serum inhibin-B concentrations demonstrate a poorer response to ovulation induction and are less likely to conceive a clinical pregnancy though ART relative to women with high day 3 inhibin-B and day 3 serum inhibin-B, in addition to a day 3 FSH, E2 and patient age, appears helpful in prediction in IVF-ET outcome.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.73-75
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• 2013

Atomic force microscopy (AFM) [1] can now not only image individual atoms but also construct atom letters using atom manipulation method [2]. Therefore, the AFM is the second generation atomic tool following the well-known scanning tunneling microscopy (STM). The AFM, however, has the advantages that it can image even insulating surfaces with atomic resolution and also measure the atomic force itself between the tip-apex outermost atom and the sample surface atom. Noting these advantages, we have been developing a novel bottom-up nanostructuring system, as shown in Fig. 1, based on the AFM. It can identify chemical species of individual atoms [3] and then manipulate selected atom species to the designed site one-by-one [2] to assemble complex nanostructures consisted of many atom species at room temperature (RT). In this invited talk, we will introduce our results toward atom-by-atom assembly of composite nanomaterials based on the AFM at RT. To identify chemical species, we developed the site-specific force spectroscopy at RT by compensating the thermal drift using the atom tracking. By converting the precise site-specific frequency shift curves, we obtained short-range force curves of selected Sn and Si atoms as shown in Fig. 2(a) and 2(b) [4]. Then using the atom-by-atom force spectroscopy at RT, we succeeded in chemical identification of intermixed three atom species in Pb/Sn/Si(111)-(${\surd}3$'${\surd}3$) surface as shown in Fig. 2(c) [3]. To create composite nanostructures, we found the lateral atom interchange phenomenon at RT, which enables us to exchange embedded heterogeneous atoms [2]. By combining this phenomenon with the modified vector scan, we constructed the atom letters "Sn" consisted of substitutional Sn adatoms embedded in Ge adatoms at RT as shown in Fig. 3(a)~(f) [2]. Besides, we found another kind of atom interchange phenomenon at RT that is the vertical atom interchange phenomenon, which directly interchanges the surface selected Sn atoms with the tip apex Si atoms [5]. This method is an advanced interchangeable single atom pen at RT. Then using this method, we created the atom letters "Si" consisted of substituted Si adatoms embedded in Sn adatoms at RT as shown in Fig. 4(a)~(f) [5]. In addition to the above results, we will introduce the simultaneous evaluation of the force and current at the atomic scale using the combined AFM/STM at RT.

• Journal of the Korean Society of Radiology
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• v.3 no.2
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• pp.11-16
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• 2009

Mercury Iodide as good sensitivity at radiation and has an easy peculiarity that operates at low voltage for other photoconductors(a-Se, a-Si, Ge, etc) Based on this characteristic, we studied about an efficiency of the digital x-ray detector in acccordance with the thickness of photoconductor. To solve the problem that is difficult to make a large area film using PVD(Physical Vapor Deposition)method, we used a PIB(Particle In Binder)method. To make a binder paste, we used a PVB(Polyvinylbutyral) as a binder and a DGME(Diethylene Glycol Monobutyl Ether), DGMEA(Diethylene Glycol Monobutyl Ether Acetate) as a solvent. Using this binder paste, we made a polycrystal mercury iodide film that has an each thickness. To evaluate the electrical properties of this films, we measured a darkcurrent, sensitivity and SNR(Signal to Noise Ratio). Mercury iodide film of the 200um thickness has good electrical properties as a result of the measurement. From this result there is a good chance that replace the existing a-Se(Amnorphous seleinum; a-se) with the mercury iodide.

• ETRI Journal
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• v.29 no.3
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• pp.371-380
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• 2007

This paper proposes a new automatic compensation network (ACN) for a system-on-chip (SoC) transceiver. We built a 5 GHz low noise amplifier (LNA) with an on-chip ACN using 0.18 ${\mu}m$ SiGe technology. This network is extremely useful for today's radio frequency (RF) integrated circuit devices in a complete RF transceiver environment. The network comprises an RF design-for-testability (DFT) circuit, capacitor mirror banks, and a digital signal processor. The RF DFT circuit consists of a test amplifier and RF peak detectors. The RF DFT circuit helps the network to provide DC output voltages, which makes the compensation network automatic. The proposed technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance, gain, and noise figure using the developed mathematical equations. The ACN automatically adjusts the performance of the 5 GHz LNA with the processor in the SoC transceiver when the LNA goes out of the normal range of operation. The ACN compensates abnormal operation due to unusual thermal variation or unusual process variation. The ACN is simple, inexpensive and suitable for a complete RF transceiver environment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.164-174
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• 2023

The bandgap characteristics of semiconductor materials are an important factor when utilizing semiconductor materials for various applications. In this study, based on data provided by AFLOW (Automatic-FLOW for Materials Discovery), the bandgap of a semiconductor material was predicted using only the material's compositional features. The compositional features were generated using the python module of 'Pymatgen' and 'Matminer'. Pearson's correlation coefficients (PCC) between the compositional features were calculated and those with a correlation coefficient value larger than 0.95 were removed in order to avoid overfitting. The bandgap prediction performance was compared using the metrics of R² score and root-mean-squared error. By predicting the bandgap with randomforest and xgboost as representatives of the ensemble algorithm, it was found that xgboost gave better results after cross-validation and hyper-parameter tuning. To investigate the effect of compositional feature selection on the bandgap prediction of the machine learning model, the prediction performance was studied according to the number of features based on feature importance methods. It was found that there were no significant changes in prediction performance beyond the appropriate feature. Furthermore, artificial neural networks were employed to compare the prediction performance by adjusting the number of features guided by the PCC values, resulting in the best R² score of 0.811. By comparing and analyzing the bandgap distribution and prediction performance according to the material group containing specific elements (F, N, Yb, Eu, Zn, B, Si, Ge, Fe Al), various information for material design was obtained.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1456-1467
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• 2015

This paper presents a novel close-loop control scheme based on small signal modeling and weighted composite voltage feedback for a three-phase input and single-phase output Matrix Converter (3-1MC). A small non-polar capacitor is employed as the decoupling unit. The composite voltage weighted by the load voltage and the decoupling unit voltage is used as the feedback value for the voltage controller. Together with the current loop, the dual-loop control is implemented in the 3-1MC. In this paper, the weighted composite voltage expression is derived based on the sinusoidal pulse-width modulation (SPWM) strategy. The switch functions of the 3-1MC are deduced, and the average signal model and small signal model are built. Furthermore, the stability and dynamic performance of the 3-1MC are studied, and simulation and experiment studies are executed. The results show that the control method is effective and feasible. They also show that the design is reasonable and that the operating performance of the 3-1MC is good.

• The Journal of Internal Korean Medicine
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• v.12 no.2
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• pp.138-147
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• 1991

Review of literature on stomachache. According to investigated the pathology of a stomachache about all sorts of falling ill, I have been obtained following conclusions. 1. The cause of Ui Wan Tong are clod-wet-ui wan, sik juk, dam eum, a huy1 be made of gi bul soon (氣不順). 2. Pain of Je sang bu are called jung wan tong, dae bok tong, jung cho tong, cause are sik juk, han sa, chung juk. pain of je ha bu are called so bok tong, hache tong, soh bok tong, so bok are devided two part, one is so eum sin the other is gul eum gan, cause are jo gyul dae jang, yul gyu1 bang kwang, hyul gyul bang kwang, porak hu ect. 3. Pain of je bu are called je bok tong, hwan je e tong, so bok je ju tong, and cause are juk yu1, jo si, dam hwa. Pain of yang hyup bu are called yang hyup ha so bok tong, yang bang ge hyup tong, yang hup jisang tong, cause are ban gi,yang myung jo geom. According to above results, the patholosy of a stomach ache about the part of falling ill in a course of transformation on the epidemic fever comes into the viscera.