• Journal of the Mineralogical Society of Korea
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• v.11 no.1
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• pp.20-31
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• 1998

Adsorption of metal elements onto illite and halloysite was investigated at $25^{\circ}C$ using pollutant water collected from the gold-bearing metal mine. Incipient solution of pH 3.19 was reacted with clay minerals as a function of time: 10 minute, 30 minute, 1 hour, 12 hour, 24 hour, 1 day, 2 day, 1 week, and 2 week. Twenty-seven cations and six anions from solutions were analyzed by AAs (atomic absorption spectrometer), ICP(induced-coupled plasma), and IC (ion chromatography). Speciation and saturation index of solutions were calculated by WATEQ4F and MINTEQA2 codes, indicating that most of metal ions exist as free ions and that there is little difference in chemical species and relative abundances between initial solution and reacted solutions. The adsorption results showed that the adsorption extent of elements varies depending on mineral types and reaction time. As for illite, adsorption after 1 hour-reaction occurs in the order of As>Pb>Ge>Li>Co, Pb, Cr, Ba>Cs for trace elements and Fe>K>Na>Mn>Al>Ca>Si for major elements, respectively. As for halloysite, adsorption after 1 hour-reaction occurs in the order of Cu>Pb>Li>Ge>Cr>Zn>As>Ba>Ti>Cd>Co for trace elements and Fe>K>Mn>Ca>Al>Na>Si for major elements, respectively. After 2 week-reaction, the adsorption occurs in the order of Cu>As>Zn>Li>Ge>Co>Ti>Ba>Ni>Pb>Cr>Cd>Se for trace elements and Fe>K>Mn>Al, Mg>Ca>Na, Si for major elements, respectively. No significant adsorption as well as selectivity was found for anions. Although halloysite has a 1:1 layer structure, its capacity of adsorption is greater than that of illite with 2:1 structure, probably due to its peculiar mineralogical characteristics. According to FTIR (Fourier transform infrared spectroscopy) results, there was no shift in the OH-stretching bond for illite, but the ν1 bond at 3695 cm-1 for halloysite was found to be stronger. In the viewpoint of adsorption, illite is characterized by an inner-sphere complex, whereas halloysite by an outer-sphere complex, respectively. Initial ion activity and dissociation constant of metal elements are regarded as the main factors that control the adsorption behaviors in a natural system containing multicomponents at the acidic condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.186-186
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• 2011

[100] 방향으로 4$^{\circ}$ 기울어진 Si(001)-2${\times}$1(vicinal surface)을 초고진공하(UHV)에서 청결하게 하고 열처리하면 rebonded-atom을 가진 DB double step과 이 step에 나란한 아홉 개의 dimer를 가진 평균 폭이 4.0 nm인 single-domain의 (001)-2${\times}$1 테라스의 면으로 재구조된다 [그림 a]. 본 연구에서는 이 표면 위에 Sb을 상온에서 증착하여 덮고 후열처리하면(2 ML, 500$^{\circ}C$ 10 분), Sb-dimer가 Si 표면을 한 층 덮고 (001) 테라스의 Sb-dimer 방향이 DA double-step과 수직을 이루는 1${\times}$2 구조를 이룬다는 사실을 STM으로 확인하였다 [그림 b]. 이러한 Sb-passivation의 효과는 표면 Si-dimer의 부분적으로 채워진 dangling-bond를 Sb-dimer의 완전히 채워진 고립쌍(lone-pair)으로 바꿈으로써 표면 자유 에너지를 줄이고, 나아가 계면 Si 층은 bulk에 유사하게 되는 데에 있다. 이 passivation 된 표면은 Ge/Si 등의 heteroepitaxy에 사용할 수 있고, 특히 single-domain을 유지하며 step 방향에 대해 평행인 dimer-row로 이루어져 있어서 원자나 전자의 이동에 비등방적 효과를 증가시킬 것이 예측된다.

• Journal of Radiation Protection and Research
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• v.25 no.1
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• pp.3-9
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• 2000

The Korea Atomic Energy Research Institute acquired the Lawrence Livermore National Laboratory phantom for calibration of germanium detectors used for in vivo measurement of radionuclides deposited in human lungs. The manufacturer inscribed concentric circles as a phoswich detector positioning guides on the phantom's torso plate and its overlay plates, and provided the effective thickness of the chest wall for each plate measured at locations over the circles. However, since the germanium detectors are of different sizes, the areas considered for phoswich detectors were no. longer applicable for the locations of the germanium detectors on the phantom. Therefore, we re-evaluated the effective thickness of the phantom to determine if the manufacturer' s data are valid for germanium detectors in use for in vivo lung counting or if new values must be implemented. Differences no more than 3% in effective thickness were found between the germanium detector regions to be used at the Korea Atomic Energy Research Institute and the phoswich detector regions prescribed by the manufacturer.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.180-183
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• 2000

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.129-129
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• 2004

• Current Optics and Photonics
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• v.3 no.6
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.1-7
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• 1997

The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.5
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• pp.272-277
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• 2006

The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.66-66
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• 2009