• 한국전기전자재료학회논문지
• /
• 제21권3호
• /
• pp.272-278
• /
• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• 전력전자학회논문지
• /
• 제25권2호
• /
• pp.87-93
• /
• 2020

This study proposes a gate driver that operates semiconductor switches in the bipolar pulsed power modulator. The proposed gate driver was designed to receive isolated power and synchronized signals through the gate transformer. The gate circuit has a separate delay in the on-and-off operation to prevent a short circuit between the top and bottom switches of each leg. On the basis of the proposed gate circuit, a bipolar pulsed power modulator prototype with a 2.5 kV/100 A rating was developed. Finally, the bipolar pulsed power modulator was tested under resistive load and plasma reactor load conditions. It is verified that the proposed gate driver can be applied to a bipolar pulsed power modulator.

• 전기전자학회논문지
• /
• 제25권2호
• /
• pp.381-387
• /
• 2021

과거 주로 게임과 동영상 재생에 있어 리얼함을 극대화하기 위해 사용되었던 HMD(Head Mount Display)의 수요가 증가하고, 그 활용 범위가 교육과 훈련 등으로 확대되면서, 기존 HMD의 성능을 향상시킬 수 있는 방안에 대한 관심이 높아지고 있다. 본 논문에서는 HMD의 각 화소 회로에 제어 신호를 보내는 gate driver의 성능을 향상시키기 위해 CNT를 포함한 트랜지스터를 활용하는 방법에 대해 논하고자 한다. 기존 gate driver의 버퍼부를 구성하는 트랜지스터를 CNT를 포함한 트랜지스터로 교체하는 회로 설계 방법을 제안하고, 그 성능을 회로 시뮬레이션을 통해 기존 트랜지스터로만 구성된 gate driver의 성능과 비교해 보고자 한다. 시뮬레이션 결과, gate driver에 CNT를 포함할 경우 12.5 GHz의 속도로 기존 gate driver 대비 약 0.3V 증가된 출력 전압(1.1V)을 얻을 수 있었으며, 최대 20배의 gate width를 줄일 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.822-824
• /
• 2007

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

• International journal of advanced smart convergence
• /
• 제12권4호
• /
• pp.1-7
• /
• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

• Journal of Information Display
• /
• 제5권2호
• /
• pp.1-5
• /
• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
• /
• pp.1355-1357
• /
• 2005

This paper discusses Gate-driver circuit for improved switching characteristics. This resonant gate-driver recycles the energy stored in the gate capacitance to reduce the turn-off switching loss associated with a conventional gate-driver. Reducing the loss reduces the power consumption and hence the subsequent power dissipation in the resonant gate-driver. The design considerations of implementing a practical MOSFET gate-driver using this topology are discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.395-398
• /
• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240$^{\ast}$320) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 전력전자학회논문지
• /
• 제26권6호
• /
• pp.429-436
• /
• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2017년도 추계학술대회
• /
• pp.153-154
• /
• 2017

In this paper, a short-circuit protection function of a gate driver for SiC FET is investigated, which monitors voltage between drain and source of a FET under turn-on condition and turns off the FET if the voltage exceeds a predefined value.