• 제목/요약/키워드: Gate driver

검색결과 215건 처리시간 0.029초

LCD/PDP TV 전원장치용 고전압 구동 IC (High Voltage Driver IC for LCD/PDP TV Power Supply)

  • 송기남;이용안;김형우;김기현;서길수;한석붕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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LF 안테나 구동기의 디지털 블록 설계 (Design of Digital Block for LF Antenna Driver)

  • 손승일
    • 한국정보통신학회논문지
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    • 제15권9호
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    • pp.1985-1992
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    • 2011
  • PE(Passive Entry)는 자동차 운전자가 스마트 키를 직접 사용하지 않고 차량의 문을 열거나 닫는 자동차 기술이다. PG(Passive Go)는 운전자가 스마트 키를 갖고 차량 내에 있을 때 시동을 걸거나 끄는 기술이다. 이러한 2가지 기능을 합쳐서 PEG라 부른다. PEG의 핵심 기술 중의 하나인 LF(Low Frequency) 안테나 구동기는 명령을 처리하는 디지털 블록과 sine 파를 발생시키는 아날로그 블록으로 구성되어 있다. LF 안테나 구동기의 디지털 블록은 MCU(혹은 ECU)로부터 명령을 받아서 요청된 명령을 수행하며, 내부의 FIFO 블록에 안테나 구동 관련 명령 및 데이터를 저장한다. FIFO에서 명령을 읽어내 이에 대응하는 조치를 취하며 변조된 LF 데이터를 아날로그 블록에 전달하면 아날로그 블록은 sine 파를 생성하여 안테나를 통해 외부로 전달한다. 설계된 LF 안테나 구동기용 디지털 블록은 기존의 제품과 비교하여 더 빠른 속도로 LF 데이터 전송을 수행할 수 있다. 이의 응용 분야는 자동차용 PEG 및 건물의 출입문 개폐에 활용이 가능하다.

Development of TFT-LCD panel with reduced driver ICs

  • Kim, Sung-Man;Lee, Jong-Hyuk;Lee, Hong-Woo;Lee, Jong-Hwan;Choi, Kwang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.352-354
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    • 2008
  • A 15.4" WXGA TFT-LCD, featuring integrated a-Si:H gate driver circuits and reduced data driver ICs, has been developed. To reduce number of data lines into 1/2 of conventional structure, the pixel array has been re-mapped with re-organized data signal. Unintended artificial effects such as flicker were removed by adopting the novel pixel array having a 'zigzag' map. To minimize the power consumption, a column inversion method was incorporated in the zigzag pixel array (Fig.1) without modifying the polarity map of conventional dot inversion method.

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디스플레이 구동을 위한 고속 레벨-쉬프터 회로 (A High-speed Level-shifter Circuit for Display Panel driver)

  • 박원기;차철웅;이성철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.657-658
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    • 2006
  • A Novel level-shifter circuit for Display Panel Driver is presented. A Proposed level-shifter is for the high speed and high-voltage driving capability. In order to achieve this purpose, the proposed level-shifter restricts and separates the Vgs of the output driver's pull-up PMOS and pull-down NMOS with Zener diode. And a speed-up PMOS transistor is introduced to reduce delay. The control signal of speed-up PMOS was designed by bootstrapping method to minimize the gate to source (Vgs) voltage to avoid Vgs breakdown.

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Technology Trend and Requirement of Mobile Displays Using Low-Temperature Poly-Si (LTPS) Technologies

  • Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.409-412
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    • 2007
  • A lot of research for system-on-panel(SOP) have been done to integrate display systems including data driver, gate driver, timing controller, DC-DC converter, and smart functions such as embedded touch screen, ambient brightness sensing and luminance control, finger printing on the glass. Recently, the cost of an one-chip driver IC with various functions has decreased rapidly, and new mobile display interface technologies have been introduced. So it is necessary to examine the feasibility of SOP for practical mobile applications. In this paper, we will re-examine LTPS technologies for mobile displays in terms of various aspects and discuss the practical limitations on SOP technology and future technology trend of mobile displays.

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BICMOS게이트 어레이 구성에 쓰이는 소자의 제작 및 특성에 관한 연구 (A Study on the Process & Device Characteristics of BICMOS Gate Array)

  • 박치선
    • 한국통신학회논문지
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    • 제14권3호
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    • pp.189-196
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    • 1989
  • 본 논문에서는 BICMOS 게이트 어레이 시스템 구성시 내부의 논리회로 부분은 CMOS 소자로 입출력부는 바이폴라 소자를 이용할 수 있는 공정과 소자 개발을 하고자 하였다. BICMOS게이트 어레이 공정은 폴리게이트 p-well CMOS 공정을 기본으로 하였고, 소자설계의 기본개념은 공정흐름을 복잡하지 않게 하면서 바이폴라, CMOS 소자 각각의 특성을 좋게 하는데 두었다. 시험결과로서, npn1 트랜지스터의 hFE 특성은 120(Ic=1mA) 정도이고, CMOS 소자에서는 n-채널과 p-채널이 각각 1.25um, 1.35um 까지는 short channel effect 현상이 나타나지 않았고, 41stage ring oscillator의 게이트당 delay 시간은 0.8ns이었다.

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부트스트랩 회로를 적용한 3-레벨 NPC 인버터의 저속 운전을 위한 PWM 스위칭 전략 (A PWM Control Strategy for Low-speed Operation of Three-level NPC Inverter based on Bootstrap Gate Drive Circuit)

  • 정준형;구현근;임원상;김욱;김장목
    • 전력전자학회논문지
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    • 제19권4호
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    • pp.376-382
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    • 2014
  • This paper proposes the pulse width modulation (PWM) control strategy for low-speed operation in the three-level neutral-point-clamped (NPC) inverters based on the bootstrap gate drive circuit. As a purpose of the cost reduction, several papers have paid attention to the bootstrap circuit applied to the three-level NPC inverter. However, the bootstrap gate driver IC cannot generate the gate signal to the IGBT for low-speed operation, because the bootstrap capacitor voltage decreases under the threshold level. For low-speed operation, the dipolar and partial-dipolar modulations can be the effective solution. However, these modulations have drawbacks in terms of the switching loss and THD. Therefore, this paper proposes the PWM control strategy to operate the inverter at low-speed and to minimize the switching loss and harmonics. The experimental results are presented to verify the validity on the proposed method.

Synchronous Carrier-based Pulse Width Modulation Switching Method for Vienna Rectifier

  • Park, Jin-Hyuk;Yang, SongHee;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.604-614
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    • 2018
  • This paper proposes a synchronous switching technique for a Vienna rectifier that uses carrier-based pulse width modulation (CB-PWM). A three-phase Vienna rectifier, similar to a three-level T-type converter with three back-to-back switches, is used as a PWM rectifier. Conventional CB-PWM requires six independent gate signals to operate back-to-back switches. When internal switches are operated synchronously, only three independent gate signals are required, which simplifies the construction of gate driver circuits. However, with this method, total harmonic distortion of the input current is higher than that with conventional CB-PWM switching. A reactive current injection technique is proposed to improve current distortion. The performance of the proposed synchronous switching method and the effectiveness of the reactive current injection technique are verified using simulations and experiments performed with a set of Vienna rectifiers rated at 5 kW.

CNT FEDs with Electron Focusing Structure for HDTV Application

  • Chi, Eung-Joon;Choi, Jong-Sick;Chang, CheolHyeon;Park, Jong-Hwan;Lee, Chul-Ho;Choe, Deok-Hyeon;Lee, Chun-Gyoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1008-1011
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    • 2005
  • In this study, the field emission display with carbon nanotube emitter is developed for the large size HDTV application. Two structures for electron beam focusing are developed on the typical top-gate cathode. The metal grid and focusing gate structure are proved to be effective for the focusing. The data switching voltage for the double gate structure is lower than 30V which is competitive value in respect of the cost for driver electronics. The brightness and color gamut are comparable to those of the commercial product such as CRT.

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Gate length에 따른 LDMOS 전력 소자의 고온동작 특성연구 (A Study on the High Temperature Characteristics of LDMOSFET under various Gate Length)

  • 박재형;구용서;구진근;안철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.13-16
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    • 2002
  • In this study, the electrical characteristics of 100v-Class LDMOSFET for high temperature applicat -ions such as electronic control systems of automo -biles and motor driver were investigated. Measurement data are taken over wide range of temperature(300k-SOOK) and various gate length(1.5 #m-3.0#m, step 0.3). In high temperature condition(>500k), drain current decreased over 30%, and specific on- resistance increased about three times in comparison with room temperature. Moreover, the ratio ROJBV, a figure of merit of the device, increased with increasing temperature.

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