Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the High Temperature Characteristics of LDMOSFET under various Gate Length

Gate length에 따른 LDMOS 전력 소자의 고온동작 특성연구

  • 박재형 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 구진근 (한국전자통신연구원) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2002.06.01
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Abstract

In this study, the electrical characteristics of 100v-Class LDMOSFET for high temperature applicat -ions such as electronic control systems of automo -biles and motor driver were investigated. Measurement data are taken over wide range of temperature(300k-SOOK) and various gate length(1.5 #m-3.0#m, step 0.3). In high temperature condition(>500k), drain current decreased over 30%, and specific on- resistance increased about three times in comparison with room temperature. Moreover, the ratio ROJBV, a figure of merit of the device, increased with increasing temperature.

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