• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.97-98
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• 2009

Tunneling barrier engineered charge trap flash (TBE-CTF) memory capacitor were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectrics layers were used as engineered tunneling barrier. The charge trapping characteristic with different metal gates are also investigated. A larger memory window was achieved from the TBE-CTF memory with high workfunction metal gate.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1305-1307
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• 2007

We show that the electrical properties of organic thinfilm transistors(OTFTs) can be enhanced by controlling the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer($SiO_2$) affect on the interface energy of electrode on $SiO_2$ layer. Contact angle measurement and FT-IR spectrum shows that the interface is properly modified. OTFTs device with high efficiency has been realized through modification of interface layer.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.629-632
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• 2008

Printed organic thin-film transistors (OTFTs) were used in the fabrication of a screen- printed gate, source and drain electrodes on flexible plastic substrates using silver pastes, a coated polyvinylphenol dielectrics, and jetted bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) organic semiconductor. The OTFTs printed using screen printing and soluble processes made it was possible to fabricate a printed OTFT with a channel length as small as $13\;{\mu}m$ on plastic substrates; this was not possible using previous traditional printing techniques.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.11a
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.185-190
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• 2003

고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.17.2-17.2
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• 2010

Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).