• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.312-315
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• 2003

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

• Proceedings of the KSME Conference
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• 대한기계학회 2004년도 추계학술대회
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• pp.893-898
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• 2004

The hydraulic cylinder is used for actuating a sluice gate which controls the volume of water in the reservoir. Generally, the one cylinder type is used to operate the sluice gate. In order to reduce the required cylinder force to operate the sluice gate significantly, the sequentially operated-hydraulic cylinders type is designed and the optimal locating points of cylinders are searched using the complex method that is one kind of constrained direct search method.

• Proceedings of the KIEE Conference
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.231-233
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• 1991

This paper discribes a study on the switching character of MOS-GTO and the design of gate drive circuit. Chopping power supply converter, synchronious and asyncronious motor speed adjustment, inverter, etc., needs low drive energy "high frequency" switches. To fulfill these need, switches must have rapid switching time and insulated gate control. MOS-GTO structure is well suited to these constraints. The power switch is serial installation of a GTO thyrister and a MOS Transistor. The gate of the GTO is linked to positive pole of the cascode structure via a MOS high voltage transistor and ground via a transient absorber diode. This high performance MOS-GTO assembly considerably increases the strength which facilitate the drive of GTO thyristers.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.165.2-165.2
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• 2011

Flow with suction to water turbine must be in stable state at small hydraulic power plant. But because of water level fluctuation and water gate effect according to irregular supply of cooling water, it would happen to produce bubble and vortex and finally lead to problems in power-plant system. With utilizing the concept design of double size gate, surface water overflowed the overhead of gate for stable flow at suction. We developed the overflow condition and analyzed the design factor with existed one such as water level(overflow amount) and overhead of water gate(overflow figure). Flow test and CFD simulation say that flow have stable state around suction and 20% of wave reduction effect at surface layer after surface water overflow.

• Journal of The Korean Society of Agricultural Engineers
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• 제53권3호
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• pp.35-41
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• 2011

A model test is carried out to investigate the vibration of truss type lift gate in the four major rivers project. The gate model scaled with the ratio of 1 : 25 is made of acryl panel dimensioned 1.6 m in width, 0.28 m in height in the concrete test flume. Firstly natural frequencies of the model gate are measured and the results are compared with the numerical results in order to verify the model. The amplitudes of the vibration are measured under the different gate opening and water level conditions. The results are analyzed to study the characteristics of the gate vibration according to the small gate opening, the large gate opening and the overflow conditions. These test results presents a basic data for the guide manuals of gate management and a design method to reduce the gate vibration of truss type lift gate. Finally, the vibration of truss type lift gate are assessed in comparison with those of formerly tainter gate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제29권11호
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• pp.681-684
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• 2016

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

• Journal of Korea Water Resources Association
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• 제51권5호
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• pp.405-415
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• 2018

Hydraulic variables such as discharge coefficient, gate opening, and upstream water depth are required to calculate the discharge of vertical lift gate. It is very important for a precise gate design, because it may affect the rest, to predict the behavior of gate opening during operation. In this study, an equation by which gate opening could be predicted with any upstream water depths was derived from the relation between the calculated value from buoyancy theory and measured one from experiment for a floating gate model. Downpull force was the reason for the differences between the calculated and the measured and it was verified using pressure coefficient. Also, the relation of discharge coefficient with gate opening ratios was derived. The derived relations were used for flood routing and it was realized that downpull force effect should be fully taken into account during gate design.

• Journal of the Computational Structural Engineering Institute of Korea
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• 제14권3호
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• pp.267-276
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• 2001

On the basis of structural analysis of the radial gate(that is, Tainter gate), this paper focuses on the optimization of the moment distribution according to the location of the arm of the radial gate. In spite of its importance from economical view point, we could hardly find the study on the optimum design of radial gate. Accordingly, the present study identifies the optimum section modulus for a radial arm along with the optimum position for 2 of 3 radial arms with a convex cylindrical skin plate relative to a given radius of the skin plate curvature, pivot point, water depth, ice pressure, etc. These optimum measurements are then compared with previously constructed radial gates. The results indicate that the optimum section modulus vague for a radial arm was appreciably smaller than the previously constructed examples.

• Journal of Korean Institute of Industrial Engineers
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• 제29권2호
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• pp.179-189
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• 2003

Gate poly-silicon critical dimension is a prime characteristic of a metal-oxide-semiconductor field effect transistor. It is important to achieve the uniformity of gate poly-silicon critical dimension in order that a semiconductor device has acceptable electrical test characteristics as well as a semiconductor wafer fabrication process has a competitive net-die-per-wafer yield. However, on gate poly-silicon critical dimension, the complexity associated with a semiconductor wafer fabrication process entails hierarchical variance components according to run-to-run, wafer-to-wafer and even die-to-die production unit changes. Specifically, estimates of the hierarchical variance components are required not only for disclosing dominant sources of the variation but also for testing the wafer-level uniformity. In this paper, two experimental designs, a two-stage nested design and a randomized complete block design are considered in order to estimate the hierarchical variance components. Since gate poly-silicon critical dimensions are collected from fixed die positions within wafers, a factor representing die positions can be regarded as fixed in linear statistical models for the designs. In this context, the two-stage nested design also checks the wafer-level uniformity taking all sampled runs into account. In more detail, using variance estimates derived from randomized complete block designs, Duncan's multiple range test examines the wafer-level uniformity for each run. Consequently, a framework presented in this study could provide guidelines to practitioners on estimating the hierarchical variance components and testing the wafer-level uniformity in parallel for any characteristics concerned in semiconductor wafer fabrication processes. Statistical analysis is illustrated for an experimental dataset from a real pilot semiconductor wafer fabrication process.

• Journal of the Korean Society of Systems Engineering
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• 제18권2호
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• pp.24-39
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• 2022

For the success of the plant project, it is necessary to review the project's progress through technical and business reviews at an appropriate time, such as design and construction, and determine whether to invest or to proceed with the project to manage risks. In particular, since the plant development projects are not mass-produced, trial and error in design and construction can have severe impacts in terms of cost and schedule. To this end, gate reviews are currently being conducted in plants and other industrial sectors, but there are few studies on how to conduct gate reviews suitable for the plant field. In addition, there is little literature to refer to when conducting gate reviews. So, in this study, we present an overall framework that includes the types of gate reviews to be performed and items to be checked in each gate review on small and medium-sized plant development projects in which the owner directly develops and operates plants.