• 한국가스학회지
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• 제18권5호
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• pp.33-39
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• 2014

열매체유는 화학플랜트의 가열시스템, 열교환시스템, 특정한 가스공정, 사출성형 시스템 및 펄프 제지공정에 사용되고 있다. 열매체유는 열적 산화 분해에 잘 견디며 안전성이 뛰어나며, 열매체유가 누출이나 분출의 경우에는 점화원이 있을때 쉽게 점화된다. 본 연구에서는 공정안전관리 사업장의 화재 폭발 사고를 예방하기 위해서 열매체유의 사용 실태조사를 통해 안전관리 상태를 고찰하였다. 사업장의 공정시스템에서 사용된 열매체유의 사용실태는 개발된 설문지에 의해서 조사되었다. 본 연구 결과는 열매체유의 관리나, 열매체유 공정의 안전한 운전과 유지와 관련된 화재 폭발 사고 예방을 위한 안전관리 대책 수립에 활용될 수 있을 것이다.

• 멤브레인
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• 제20권2호
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• pp.127-134
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• 2010

연구는 음식물 쓰레기를 음식물 소멸기에서 미생물에 의해 발효하여 유기물을 감량화하고, 음식물 발효시 발생되는 가스를 냉각기에서 기체와 수분으로 분리하여 기체는 반응기로 다시 보내고 수분은 응축하여 침지식 MF 중공사 분리막이 장착된 MBR 시스템에 적용하여 처리하는 시스템에 관한 연구이다. (주)바이오하이테크에서 제작한 음식물 소멸기와 수처리 장치에 침지식 MF 중공사 모듈을 설치하여 90일간 H연구소 직원식당에서 발생되는 음식물 쓰레기를 연속 투입하여 처리하였다. 음식물 소멸기 초기 Seeding를 위하여 수분조절제로 미강, 왕겨, 톱밥을 305 kg 투입하였고 음식물은 운전기간동안 1,648 kg투입하였고 응축폐수는 1,600 L 발생되었다. 음식물 소멸기 운전 종료 후 배출된 발효 부산물은 386 kg으로 감량율은 약 80%로 조사되었다. 침지식 MF 중공사 분리막 모듈을 응축폐수의 MBR 시스템에 적용하여 유기물 처리한 결과 제거율은 각각 BOD 99.9%, COD 97.5%, SS 98.6%, T-N 54.6%, T-P 34.7%였으며, 총대장균은 100%가 제거되었다.

• 한국항공우주학회지
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• 제37권5호
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• pp.490-495
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• 2009

소형 인공위성의 궤도천이 및 보정을 위하여 추력이 약 10 mN이고 비추력이 1500 s인 홀 방식 전기추력기를 설계하였다. 개발된 추력기는 홀 방식의 추력부, 전력공급부 및 연료 공급부로 구성되어 있고, 무게, 소모전력 및 효율은 각각 10 kg, 300 W 및 30%정도이다. 개발된 추력기 시스템에 대한 간략한 소개를 홀 방식의 추력기를 선택하게 된 배경해석과 함께 기술하였다.

• 한국세라믹학회지
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• 제49권2호
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 정보처리학회논문지D
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• 제10D권6호
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• pp.1041-1048
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• 2003

본 논문은 계기 영상을 캡처하고, 숫자를 자동인식하며 데이터를 PCS 데이터 망을 통하여 무선으로 전송하는 원격 영상 검침 시스템을 구현한다. 기존의 가스/수도 미터기를 그대로 사용하면서 소형, 저가의 흑백 CMOS 카메라를 미터기 계기판 전면에 밀착하여 설치하고 NTSC 카메라 영상을 얻는다. 원격 데이터 전송을 위해 상업적인 PCS 망에서 제공되는 SMS를 이용한다. 계기 영상의 캡처를 위해 DVR 및 숫자 인식 알고리즘을 개발하였다. 이외에 SMS 및 계기 선택기의 하드웨어 및 소프트웨어를 개발하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국재료학회지
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• 제1권2호
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• pp.77-85
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• 1991

LPCVD(Low Pressure Chemical Vapor Deposition) System을 이용하여 여러가지 증착 변수에 따른 실리콘 박막의 표면형상에 대해 고찰하였다. 중착압력, 중착온도, 반응기체의 유속에 따라 증착층의 표면형상이 큰 변화를 나타냈으며, 증착압력과 반응기체의 유속이 증가할수록 유효면적이 최대가 되는 증착온도가 증가하였다. 이러한 실험결과는 안정한 핵의 생성률이 최대가 될때 유효표면적이 최대가 된다는 가정으로부터 유도된 식과 일치하는 결과를 나타냈다.

• 열처리공학회지
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• 제9권4호
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• pp.234-242
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• 1996

The direct reaction method has been used for the fabrication of Al-Mg/$Al_2O_3$ functionally gradient materials. It was found that the reaction layer of the Al-Mg/$Al_2O_3$ powder compact at $900^{\circ}C$ under air atmosphere led to the formation of reaction layers with varying ceramic phase contents. As the results of experiments by using the TGA system, the characteristics and growth behavior of the reaction layers were affected by the reaction temperature, the gas flow rate, the Mg contents and the $Al_2O_3$ contents.

• 산업경영시스템학회지
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• 제37권3호
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• pp.43-50
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• 2014

In this paper, we deal with a single machine scheduling problems integrating with step deterioration effect and a rate-modifying activity (RMA). The scheduling problem assumes that the machine may have a single RMA and each job has the processing time of a job with deterioration is a step function of the gap between recent RMA and starting time of the job and a deteriorating date that is individual to all jobs. Based on the two scheduling phenomena, we simultaneously determine the schedule of step deteriorating jobs and the position of the RMA to minimize the makespan. To solve the problem, we propose a hybrid typed genetic algorithm compared with conventional GAs.