• Journal of the Korean Institute of Gas
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• v.18 no.5
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• pp.33-39
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• 2014

Heat transfer oils are used in applications such as chemical plant heating systems, refinery heat exchange systems, certain gas processes, injection molding systems, and pulp and paper processing. These oils are extremely stable and resistant to thermal and oxidative degradation. In the event of a spill or accidental release of heat transfer oils, it can be ignited easily when there is an ignition source. This study discusses the status of safety management through the actual status of the heat transfer oils to prevent fire and explosion accidents in industries for process safety management. The actual status of the heat transfer oils in process system of industries surveyed by a questionnaire developed. The results of this study can be used to help establishment of safety management to prevent fire and explosion accidents, such as the management of heat transfer oils, safe operation and maintenance in heat transfer oil processes.

• Membrane Journal
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• v.20 no.2
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• pp.127-134
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• 2010

This study is conducted about the system that reduces organism after fermenting food waste from a food waste disposal equipment, divides gas made when food waste is fermented into gas and water, and then sends gas to a reactor again, condenses water, and apply it to the MBR system with submerged MF hollow fiber membranes. A submerged MF hollow fiber membrane module was installed to a food waste disposal equipment and a water treatment system made by Bio Hitech Co,. Ltd. to process food waste generated from a staff cafeteria in a H institute for 90 days. For initial seeding of a food waste disposal equipment, 305 kg of rice bran, chaff, and sawdust as well as 1,648 kg of food were input during the operation, and 1,600 L of condensed wastewater occurred. Fermented by-product after finishing running a food waste disposal equipment was 386 kg and its reduction was shown to be 80%. The organism was processed by applying submerged MF hollow fiber membrane module to the MBR system of condensed wastewater, and the result shows reduction rates were BOD 99.9%, COD 97.5%, SS 98.6%, T-N 54.6% and T-P 34.7% and the total colon bacillus was perfectly eliminated.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.5
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• pp.490-495
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• 2009

A small Hall-effect thruster with a thrust range near 10 mN and a specific impulse of about 1500 s has been designed to control or maintain the orbits of small satellites. The thruster system consists of a hall-effect thruster head, a power processing unit and a Xenon (Xe) gas feed system. The total mass, the consumed electric power and the efficiency of the thruster are approximately 10 kg, 300W and 30%, respectively. Analyses results that support the selection of the thruster for small satellites are provided along with a brief description of the thruster system.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• The KIPS Transactions:PartD
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• v.10D no.6
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• pp.1041-1048
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• 2003

This paper implements a remote image based metering(IBM) system which capture meter image, recognizes number automatically, and send the data wirelessly through PCS data network. We use existing gas/water meter and get NTSC camera image by installing small monochrome CMOS camera on the meter closely. For remote data transfer, we use SMS (short message service) that is provided by commercial PCS network. We developed DVR(digital video recorder) for capturing meter image and character recognition algorithm. In addition, hardware and software for SMS and meter selector were developed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.77-85
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• 1991

In this study we have investigated surface morphologies of as-deposited silicon films on the various deposition conditions using LPCVD(Low Pressure Chemical Vapor Deposition) System. The processing conditions such as deposition temperature, pressure and flow rate of $SiH_4$ gas were found to determine the surface morphology. The optimum temperature of maximum effective surface area increased with increasing the deposition pressure and the flow rate of $SiH_4$ gas, These experimental results were also in quite good agreement with the equation derived under the assumption that the maximum effective surface area is obtained on the condition of maximum nucleation rate.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.4
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• pp.234-242
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• 1996

The direct reaction method has been used for the fabrication of Al-Mg/$Al_2O_3$ functionally gradient materials. It was found that the reaction layer of the Al-Mg/$Al_2O_3$ powder compact at $900^{\circ}C$ under air atmosphere led to the formation of reaction layers with varying ceramic phase contents. As the results of experiments by using the TGA system, the characteristics and growth behavior of the reaction layers were affected by the reaction temperature, the gas flow rate, the Mg contents and the $Al_2O_3$ contents.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.37 no.3
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• pp.43-50
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• 2014

In this paper, we deal with a single machine scheduling problems integrating with step deterioration effect and a rate-modifying activity (RMA). The scheduling problem assumes that the machine may have a single RMA and each job has the processing time of a job with deterioration is a step function of the gap between recent RMA and starting time of the job and a deteriorating date that is individual to all jobs. Based on the two scheduling phenomena, we simultaneously determine the schedule of step deteriorating jobs and the position of the RMA to minimize the makespan. To solve the problem, we propose a hybrid typed genetic algorithm compared with conventional GAs.