• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.72-75
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• 2001

In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.261-262
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• 2006

High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• 한국표면공학회지
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• 제53권2호
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• pp.72-79
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• 2020

Two Fe-Cr steels of T22 steel and STS430 steel were corroded at 650 and 750℃ for 100hr in sewage sludge-(0.3% SO₂-6% O₂-10% H₂O-balance CO₂) mixed gas environment. T22 steel corroded faster than STS430, indicating that the Cr content significantly influence the corrosion rates. T22 formed thick and non-protective Fe₂O₃ as the major oxide and Fe₃O₄ as the minor one. With an increase in corrosion temperature, their corrosion rates increased, being accompanied with formation of pores and cracks in the thickened oxide scales that were non-adherent. STS430 steel formed Fe₂O₃, Fe₃O₄ as the outer scale and (Fe, Cr)-O as the inner layer by which its corrosion rate is greatly reduced. Both the T22 and STS430 steel samples formed multi-layered scales by outward diffusion of Fe ions and inward diffusion of oxygen and sulfur ions at high-temperature more than 650℃.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• 한국재료학회지
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• 제20권4호
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• pp.187-193
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• 2010

Chromium nitride (CrN) samples with two different layer structures (multilayer and single layer) were coated on bipolar plates of polymer electrolyte membrane fuel cells (PEMFC) using the reactive sputtering method. The effects with respect to layer structure on corrosion resistance and overall cell performance were investigated. A continuous and thin chromium nitride layer ($Cr_{0.48}\;N_{0.52}$) was formed on the surface of the SUS 316L when the nitrogen flow rate was 10 sccm. The electrochemical stability of the coated layers was examined using the potentiodynamic and potentiostatic methods in the simulated corrosive circumstances of the PEMFC under $80^{\circ}C$. Interfacial contact resistance (ICR) between the CrN coated sample and the gas diffusion layer was measured by using Wang's method. A single cell performance test was also conducted. The test results showed that CrN coated SUS316L with multilayer structure had excellent corrosion resistance compared to single layer structures and single cell performance results with $25\;cm^2$ in effective area also showed the same tendency. The difference of the electrochemical properties between the single and multilayer samples was attributed to the Cr interlayer layer, which improved the corrosion resistance. Because the coating layer was damaged by pinholes, the Cr layer prevented the penetration of corrosive media into the substrate. Therefore, the CrN with a multilayer structure is an effective coating method to increase the corrosion resistance and to decrease the ICR for metallic bipolar plates in PEMFC.

• 열처리공학회지
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• 제26권3호
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• pp.105-112
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• 2013

The microstructural changes of Fe-20Mn-12Cr-1Cu alloy have been studied during high temperature gas nitriding (HTGN) at the range of $1000^{\circ}C{\sim}1150^{\circ}C$ in an atmosphere of nitrogen gas. The mixed microstructure of austenite and ${\varepsilon}$-martensite of as-received alloy was changed to austenite single phase after HTGN treatment at the nitrogen-permeated surface layer, however the interior region that was not affected nitrogen permeation remained the structure of austenite and ${\varepsilon}$-martensite. With raising the HTGN treatment temperature, the concentration and permeation depth of nitrogen, which is known as the austenite stabilizing element, were increased. Accordingly, the depth of austenite single phase region was increased. The outmost surface of HTGN treated alloy at $1000^{\circ}C$ appeared Cr nitride. And this was in good agreement with the thermodynamically calculated phase diagram. The grain growth was delayed after HTGN treatment temperature ranges of $1000^{\circ}C{\sim}1100^{\circ}C$ due to the grain boundary precipitates. For the HTGN treatment temperature of $1150^{\circ}C$, the fine grain region was shown at the near surface due to the grain boundary precipitates, however, owing to the depletion of grain boundary precipitates, coarse grain was appeared at the depth far from the surface. This depletion may come from the strong affinity between nitrogen and substitutional element of Al and Ti leading the diffusion of these elements from interior to surface. Because of the nitrogen dissolution at the nitrogen-permeated surface layer by HTGN treatment, the surface hardness was increased above 150 Hv compared to the interior region that was consisted with the mixed microstructure of austenite and ${\varepsilon}$-martensite.

• Korean Chemical Engineering Research
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• 제46권2호
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• pp.286-290
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• 2008

고분자전해질 연료전지는 $60{\sim}80^{\circ}C$ 운전 온도에서 개질 가스에 약간의 일산화탄소만 있어도 백금 표면에 CO가 강하게 흡착하여 촉매기능을 방해한다. 본 연구에서는 일산화탄소를 산화시키기 위해 Ru/C 층(CO 필터)을 Pt/C 층과 가스 확산층(GDL) 사이에 위치 시켰다. Ru/C 필터는 PEMFC anode가 좋은 CO 내성을 갖게 했으나 Ru/C 필터 두께로 인한 물질전달 저항과 전하 전달 저항증가에 의한 단위전지 성능저하가 0.6 V에서 약 10% 있었다. 고분자막의 열화는 PEMFC 수명을 단축시키는 주요 원인이 되고 있다. 막 내구성은 전극의 촉매 종류에 영향을 받을 수 있다. 가속실험결과 Ru/C 촉매가 불소유출 속도를 향상시킴을 보임으로써 Ru/C 촉매 첨가가 PEMFC 수명을 단축시킬 수 있음을 보였다.

• 한국진공학회지
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• 제17권2호
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• pp.109-112
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• 2008

고집적화된 반도체 소자 기술은 나날이 발전하고 있다. 특히 금속 배선을 위한 박막제조 공정에서 배선 선폭은 감소하고 있으며, 그 길이는 더욱 증가하게 되었다. 이러한 상황에서 금속 배선 물질에 대한 연구가 진행 되었고 그 결과 Cu가 그 대안으로 인식되었다. 하지만 Cu는 저온에서도 Si기판과 반응하므로 인하여 접촉면의 저항이 급격히 증가하여 소자로써의 기능이 불가능하게 되는 단점이 있다. 따라서 이러한 Cu와 Si기판 사이의 반응을 효과적으로 방지할 확산방지막의 개발이 필수 요건이 되었다. 본 연구는 Cu의 확산을 방지하는 W-C-N 확산방지막에 대한 연구로 질소비율과 열처리 온도를 변화하여 실험하였으며, 특히 격자상수 변화를 통하여 W-C-N 확산방지의 특성에 대하여 연구하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.