• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.871-874
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• 2004

In recent, it is said that the trend of LCD is direction to pursue high qualities like as high transmittance, high contrast ratio, wide viewing angle, fast response time, and so on. Especially, it is known that these qualities are essential to large size LCD like as LCD TV and we can realize them through to uniform cell gap and deep black state. Until now, the ball spacer has been used to control of uniform cell gap. However, the existence of ball spacer inside the cell causes the deformation of the liquid crystal molecules and damage to alignment layer. Such a deformation of the liquid crystal causes light-leakage in the dark state, which lowers contrast ratio of the display. Nowadays, this problem has been solved by using Patterned Spacer on Color Filter. but Side Effect just as gravity mura has been induced. In this paper, we studied the mechanism on gravity mura in case of using patterned spacer on color filter.

• The Journal of the Acoustical Society of Korea
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• v.34 no.3
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• pp.192-199
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• 2015

There is a gap between the inner wall of a pulse tube and an underwater acoustic material when the measurement for transmission loss by the pulse tube is carried out. In this paper, the effect, which is caused by the gap, for the measurement of transmission loss is analyzed. Transmission coefficient is derived from the ratio of the pressures between front and rear of the gap. Then, transmission loss for specimen with a gap is obtained by combining the transmission coefficients of the gap and specimen. The results of experiment and simulation for a specimen of stainless steel with 10 mm thickness are compared in order to evaluate the simulation model. Finally, simulations with respect to the gap size and transmission loss of a specimen are performed to analyze and evaluate the effect of the gap in measurement of transmission loss.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.2
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• pp.251-264
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• 2000

Organic removal from synthetic wastewater by electrochemical methods was investigated with various operating parameters, such as current density, retention time, electrode gap and $Cl^-/COD_{Cr}$ ratio. In electrolysis, dioxide iridium coated titanium ($IrO_2/Ti$) and stainless steel plate were used for anode and cathode respectively. The $COD_{Cr}$ removal efficiencies between plate type anode and net type anode were about same effect, but electrolytic power using net type anode is low than plate type anode. The $Cl^-/COD_{Cr}$ ratio was about $1.3kgCl^-/kgCOD_{Cr}$ when organic removal obtained 70 %, $Cl^-/COD_{Cr}$ ratio needs $2.2kgCl^-/kgCOD_{Cr}$ so as to organic completely remove. The removal efficiency of organics increased with current density, retention time and $Cl^-/COD_{Cr}$ ratio, but decreased with increasing electrode gap. The relationship of operating conditions and $COD_{Cr}$ removal efficiencies are as follows. $$COD_{Cr}(%)=80.0360(Current\;density)^{0.4451}{\times}(HRT)^{0.8102}{\times}(Gap)^{-0.4915}{\times}(Cl^-/COD_{Cr})^{0.5805}$$ There existed a competition between the removals for $COD_{Cr}$ and ammonium during electrolysis, the removal of ammonium was shown to be dominant and $COD_{Cr}$ removal was low. But $COD_{Cr}$ removal was raised as addition of alkalinity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.436-438
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• 1989

Low inductance 4-channel spark gap switch was designed and performed. At NTP, self-breakdown voltage is 29kv, 43kv and 33kv when ratio of seperation($d_1$: $d_2$) is 1:1, 1:2 and 1:3 respectively.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.155-157
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• 2005

• Korean Journal of Human Ecology
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• v.13 no.6
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• pp.959-966
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• 2004

The purpose of this research is to analyze the shape of gathered skirts made by different gatherings. The shape of gathered skirts is affected by the amount of the gatherings that control fullness along a waistline seam. The gap also has an effect on the shape. We made a few experiments to make gathered skirts in different gathering conditions. The conditions include two types of ratio of gathers, which were given the total amount of gathering, and two types of spread of gathers, which were calculated for waist and hip. Experiments were conducted to figure out the dressed shape through 3-D measurement Exyma- WBS, and also to investigate the proportion, area distribution, and gap of the shape of gathered skirts on the horizontal section map with Rapid Form 2004 SP3, a software for 3-D shape analysis. As the results show, there were differences among the proportion, area distribution, and gap of the dressed shape. It showed that the shape on the horizontal section map was different because the shape between waist and hip per parts on body was not the same.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.104-114
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• 1997

The microstructure and bond strength were investigated on the SiC/SiC and SiC/mild steel joints brazed by Ag-5at%Ti alloy. Ag-5at%Ti-2at%Fe and -5at%Fe brazing alloys were also used to see the effects of Fe addition on the bond strength of SiC/SiC brazed joints. Brazing temperature and brazing gap were selected and examined as brazing variables. The microstructure of SiC/SiC brazed joints was affected by Fe addition to the Ag-5at%Ti alloy, but the bond strength was not. Increasing brazing temperature also changed the microstructure of $Ti_5Si_3$ reaction layer and brazing alloy matrix of the SiC/SiC and SiC/mild steel joints, but not the bond strength. Brazing gap had a great effects on the bond strength. Decreasing brazing gap from 0.2 mm to 0.1 mm in SiC/SiC brazing increased the bond strength from 187 MPa to 263 MPa and, in SiC/mild steel brazing, from 189 MPa to 212 MPa. It was concluded that the most important parameter on the bond strength in SiC/SiC and SiC/mild steel brazing was the relative ratio between brazing gap and specimen size.

• Journal of the Society of Disaster Information
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• v.15 no.1
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• pp.143-152
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• 2019

Purpose : To analyze how the Fourth Industrial Revolution affects the gender gap. Method : This study regressed the relationship between ICT development index, network Readiness index and gender gap in 145 countries all over the world. Results : The ICT development index was not statistically significant, but the network readiness index was positively correlated with female labor participation rate and gender wage equality ratio, indicating that the progress of the $4^{th}$ industrial revolution increased female participation in labor but the wage gap has been shown to intensify. Conclusion : The results verify the hypothesis that the $4^{th}$ industrial revolution led by the information and communication revolution affects the labor market conditions of women.