• Title/Summary/Keyword: Gap형성

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RF MEMS 기법을 이용한 US PCS 대역 FBAR BPF 개발

  • 박희대
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.3
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    • pp.15-19
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    • 2003
  • In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

Design and fabrication of millimeter-wave GaAs Gunn diodes (밀리미터파 GaAs 건 다이오드의 설계 및 제작)

  • Kim, Mi-Ra;Lee, Seong-Dae;Chae, Yeon-Sik;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.45-51
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    • 2007
  • We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

Crown Architecture of Pinus densiflora in Canopy Gap of Natural Forests at Mt. Joongwang in Kangwon-do (강원도(江原道) 중왕산(中旺山) 지역(地域) 소나무 천연림(天然林)내 숲틈 갱신(更新) 소나무의 수관(樹冠) Architecture)

  • Jin, Young Huan;Lee, Don Koo
    • Journal of Korean Society of Forest Science
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    • v.89 no.5
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    • pp.543-551
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    • 2000
  • This study was conducted to understand Pinus densiflora regeneration characteristics from canopy gaps due to disturbance in natural forests located at Mt. Joongwang in Kangwon-do. The line-transect method was adopted to analyze crown architecture of Pinus densiflora. The saplings of Pinus densiflora in the canopy gap showed high adaptation to growth environment at their early regeneration stage, and showed different characteristics in crown architecture. Variation of branching angle in the main branch of Pinus densiflora was small in canopy gap. Primary branch growth showed was high during 4~5 year-old period and slowly low after that period. Average 5 of primary branch were generated from stem in canopy. Average 4 of secondary branch were generated from primary branch in canopy gap. Primary branches generated from the stem were uniformly distributed at all cardinal directions. When canopy gap size is $100{\sim}120m^2$, secondary branches generated from primary branch had mostly high numbers between $S44^{\circ}E$ and $S90^{\circ}W$.

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Microstrip Ring as a Compact Tunable Microwave Bandgap Structure (소형화한 주파수 가변 마이크로파 밴드갭 구조로 응용된 마이크로스트립 링)

  • Jang, Mi-Young;Kee, Chul-Sik;Park, Ik-Mo;Im, Han-Uk;Han, Hae-Wook;Lee, Jung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.9
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    • pp.35-43
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    • 2002
  • In this paper, microstrip ring with a narrow gap is characterized and used as a tunable microwave bandgap (MBG) structure. The center frequency of MBG is mainly determined by the mean circumference of the ring and coincides with odd mode resonance frequency of the ring resonator. The stop band formation by the proposed microstip MBG ring is due to the reflection of electromagnetic waves at the narrow gap introduced in the ring, and the reactive component mounted on the gap makes the stop band vary according to its value. The mounting of capacitor (inductor) is observed to decrease (increase) the center frequency of the stop band. The varactor-mounted microstrip MBG ring is expected to be useful in microwave switches and microwave amplifier circuits.

Arthroscopic Rotator Cuff Repair: Double Rows & Suture Bridge Technique (관절경적 회전근 개 봉합술: 이열 봉합술 및 교량형 봉합술식)

  • Shin, Sang-Jin
    • Clinics in Shoulder and Elbow
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    • v.11 no.2
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    • pp.82-89
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    • 2008
  • Ideal rotator cuff repair is to maintain high fixation strength and minimize gap formation for optimizing the environment of biologic healing of tendon to bone. Among the current repair techniques, the suture bridge technique is superior to single- or double-row repair in ultimate load to failure, gap formation, restoring anatomical footprint and achieving pressurized contact area. The suture bridge technique also minimizes gap formation and has rotational and torsional resistances allowing early rehabilitation. However, despite superior biomechanical characteristics of the suture bridge technique, there is no evidence that these mechanical advantages result in better clinical outcomes. Furthermore, there is no difference in failure rates between the double-row repair and suture bridge techniques. An appropriate repair technique should be determined based on tear size and pattern and tendon quality.

Surface Relief Grating Formation on Azo-Polymer (아조 고분자의 표면 부조격자 형성)

  • 황의중;김정성;여세연;이현기;오차환;송석호;김필수;한양규
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.02a
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    • pp.248-249
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    • 2003
  • 아조벤젠 고분자는 광 정보저장 및 광 스위치 소자 등의 응용가능성 때문에 많은 연구가 진행되어왔다. 이것은 바로 아조 분자가 가지고 있는 두 이성체 간의 광 이성화 과정에 의한 아조 분자의 정렬과 이 때문에 야기되는 광 유도 anisotropy가 생기는 특성 때문이다. 이와 더불에 아조 분자 필름에 빛을 쪼여 주었을 때 표면에 주기적인 부조 격자(SRG)가 형성됨이 보고 된 이후에 광 정보 저장은 물론 액정의 anchoring 이나 phase mask로의 응용, 특히 photonic band gap(PBG) 효과를 기대 할 수 있는 주기구조 형성에의 응용성 때문에 더욱 관심이 집중되고 있다. (중략)

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The Mechanism for the Low Temperature Crystallization of Amorphous Silicon Produced under Three Different Conditions (세가지 다른 조건으로 형성시킨 비정질 실리콘에 대한 저온 열처리 결정화 기구)

  • Lee, Jae-Gap;Jin, Won-Hwa;Lee, Eun-Gu;Im, In-Gwon
    • Korean Journal of Materials Research
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    • v.6 no.3
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    • pp.309-317
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    • 1996
  • 세가지 다른 방법을 이용하여 형성시킨 비정질 실리콘(SiH4 a-Si, Si2H6 a-Si, Si+ implanted SiH4 a-Si)들에 대한 저온 결정화 기구의 차이를 고전적 이론인 Avrami 식(X=1-exptn, X=결정화 분율, t=열처리 시간, n=지수)을 이용하여 검토하였다. Silane으로 형성된 비정질 실리콘의 결정화 과정에서는 Avrami 식에서의 n의 값이 2.0을 나타내고 있어, 결정성장이 이차원적으로 이루어지면서 핵생성률이 시간에 따라 감소하고 있음을 알 수가 있었다. Si+ 이온 주입에 의하여 형성된 비정질 실리콘의 결정화에서는 3.0의 지수 값이 얻어지고 있어, 정상상태의 핵생성과 함께 2차원적인 결정 성장이 이루어지고 있었다. Disilane으로 형성된 비정질 실리콘에 대한 결정화에서는 2.8의 지수값이 얻어져, 정상상태의 핵 생성이 우세하게 일어나는 2차원적인 결정성장이 일어나고 있음을 알 수 있었다. 또한 TEM을 이용하여 시간에 따라 변하는 핵생성률을 조사하여, Avrami 식의 적용이 타당성 있음을 증명하였다. 마지막으로, 최종 입자의 크기가 열처리 온도에 크게 영향을 받고 있지 않음을 확인하였다.

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Regeneration Process of the Pine(Pinus densiflora) Forest in Bulying-Gyegog, Kyungsangbuk-Do, Korea (경북 불영계곡 소나무(Pinus densiflora)임(林)의 재생(再生) 과정(科程)에 관한 연구(硏究))

  • Kim, Seong-Deog;Song, Ho Kyung
    • Journal of Korean Society of Forest Science
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    • v.84 no.2
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    • pp.258-265
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    • 1995
  • Regeneration process of edaphic pine(Pinus densiflora) climax forest in Bulyung-gyegog, Uljin-gun, Kyungsangbuk-do, was studied. The height of dominant trees in the stands are 12 15m. Upper layers are highly dominated by pine trees and are randomly distributed. Pine trees in lower layer grow in a patch type. In the upper layer, the age distribution is likely one model type with mode of 60 and 80 years. In the horizontal distribution of these trees, some of the even-aged cluster constituted of several tree were found. For the first 25 years, the stem diameter increment rates in upper layer are higher than those in the middle layer. It could be concluded that after the forest canopy had been broken out, the seedlings established densely in a patch in the gap with the decreasing density and some of them, distributed in random, would constitute the canopy.

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Hydrogen Response Characteristics of Tantalum Oxide Layer Formed by Rapid Thermal Oxidation at High Temperatures (고온에서 급속열산화법으로 형성된 탄탈륨산화막의 수소응답특성)

  • Seong-Jeen Kim
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.19-24
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    • 2023
  • Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

Research for Lateral Penumbra and Dose Distribution When Air Gap Changing in Proton Therapy Case (양성자치료시 Air Gap 변화에 따른 Lateral Penumbra와 선량분포 변화에 대한 비교 및 연구)

  • Kim, Jae-Won;Sim, Jin-Seob;Jang, Yo-Jong;Kang, Dong-Yun;Choi, Gye-Suk
    • The Journal of Korean Society for Radiation Therapy
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    • v.22 no.1
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    • pp.47-51
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    • 2010
  • Purpose: In the treatment of high-energy protons Air gap (the distance between the patient and the exit Beam) Lateral Penumbra of the changes to the increase in the radiation fields can form unnecessary and Increase the maximum dose at the site of treatment and reduced the minimum dose homogeneity of dose distributions can decline. Air gap due to this change in dose distribution compared to investigate studied. Materials and Methods: Received proton therapy at our institution Lung, Liver patients were selected and the size of six other Air gap in Field A and Field B 2, 4, 6, 8, 10 cm Proton external beam planning system by setting up a treatment plan established. Air gap according to the Lateral Penumbra area and DVH (Dose Volume Histogram) to compare the maximum dose and minimum dose of PCTV areas were compared. In addition, the dose homogeneity within PCTV Homogeneity index to know the value and compared. Results: Air gap (2, 4, 6, 8, 10 cm) at each change in field size were analyzed according to the Lateral Penumbra region Field A Change in the Air gap 2~10 cm by 1.36~1.75 cm, the average continuously increased about 28.7% and Field B Change in the Air gap 2~10 cm by 1.36~1.75 cm, the average continuously increased about 31.6%. The result of DVH analysis for relative dose of the maximum dose According to Air gap 2~10 cm is the mean average of 110.3% from 108.1% to a sustained increased by approximately 2.03% and The average relative dose of minimum dose is the mean average of 93.9% percent to 90.8 percent from the continuous decrease of about 3.31 percent. The result of Homogeneity index value to the according to Air gap 2~10 cm is the 2-fold increase from 1.09 to 2.6. Conclusion: In proton therapy case, we can see the increasing of lateral penumbra area when airgap getting increase. And increasing of Dmax and decreasing Dmin in the field are making increase homogeneity index, So we can realize there are not so good homogeneity in the PCTV. Therefore we should try to minimize air gap in proton therapy case.

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