• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.251-256
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• 2004

CsI(Tl), $CdWO_4(CWO),\;Bi_4Ge_3O_{12}(BGO)\;and\;Gd_2SiO_5:Ce(GSO)$ scintillators were studied to manufacture a phoswich detector. The maximum wavelengths of the CsI(Tl), CWO, BGO and GSO scintillators are 550 nm, 475 nm, 490 nm and 440 nm for the radioluminescence, and the absolute light outputs of the CsI(Tl), CWO, BGO and GSO scintillators are 54890 phonon/MeV, 17762 phonon/MeV, 8322 phonon/MeV and 8932 phonon/MeV with a neutral filter, and the decay time of the CsI(Tl), CWO, BGO and GSO scintillators is $1.3{\mu}s,\;8.17{\mu}s$, 213 ns and 37 ns by a single photon method. The phoswich detector which was manufactured with plastic and CsI(Tl) scintillators could separate the ${\beta}$ particle and ${\gamma}$ ray. The phoswich detector could also measure the pulse height spectra of the ${\beta}$ particle and ${\gamma}$ ray by a PSD method.

• Journal of Radiation Protection and Research
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• v.47 no.4
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• pp.195-203
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• 2022

Background: The aim of the present study was to determine radioactive concentrations in fertilizers known to contain essential nutrients. Results of this study could be used as basic data to monitor the impact of chemical fertilizers on the environment and public health. Nitrogen fertilizers, calcium fertilizers, sulfur fertilizers, phosphate acid fertilizers, and potassium chloride fertilizers were used in this study. Materials and Methods: Five chemical fertilizers were pulverized, placed in polyethylene containers, and weighed. The time to measure each specimen was set to be 3,600 seconds for a scintillator-based gamma-ray spectroscopy system. Concentration of gamma radionuclide was analyzed based on obtained spectra. At the end of the measurement, the spectrum file was stored and used to calculate radioactive concentrations using a gamma-ray spectrometer software. Results and Discussion: In the nitrogen fertilizer, 3.49 ± 5.71 Bq/kg of ¹³⁷Cs, 34.43 ± 7.61 Bq/kg of ¹³⁴Cs, and 569.16 ± 91.15 of ⁴⁰K were detected whereas ¹³¹I was not detected. In the calcium fertilizer, 5.74 ± 4.40 Bq/kg of ¹³⁷Cs (the highest concentration among all fertilizers), 22.37 ± 5.39 Bq/kg of ¹³⁴Cs, and 433.67 ± 64.24 Bq/kg of ⁴⁰K were detected whereas ¹³¹I was not detected. In the sulfur fertilizer, 347.31 ± 55.73 Bq/kg of ⁴⁰K, 19.42 ± 4.53 Bq/kg of ¹³⁴Cs, 2.21 ± 3.49 of ¹³⁷Cs, and 0.04 ± 0.22 Bq/Kg of ¹³¹I were detected. In the phosphoric acid fertilizer, 70,007.34 ± 844.18 Bq/kg of ⁴⁰K (the highest concentration among all fertilizers) and 46.07 ± 70.40 Bq/kg of ¹³⁴Cs were detected whereas neither ¹³⁷Cs nor ¹³¹I was detected. In the potassium chloride fertilizer, 12,827.92 ± 1542.19 Bq/kg of ⁴⁰K was and 94.76 ± 128.79 Bq/kg of ¹³⁴Cs were detected whereas neither ¹³⁷Cs nor ¹³¹I was detected. The present study examined inorganic fertilizers produced by a single manufacturer. There might be different results according to the country and area from which fertilizers are imported. Further studies about inorganic fertilizers in more detail are needed to create measures to reduce ⁴⁰K. Conclusion: Measures are needed to reduce radiation exposure to ⁴⁰K contained in fertilizers including phosphoric acid and potassium chloride fertilizers.

• Korean Journal of Plant Tissue Culture
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• v.27 no.3
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• pp.203-211
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• 2000

In this study to produce large-scale scopolamine we were examined in the tumor calli of Datura metel L. induced by Agrobacterium tumefaciens $Ery{101}$. The growth and scopolamine contents of tumor calli were higher under light condition than in dark. The optimum condition of growth and scopolamine production were fluence rate of 16 $\mu$mol $m^{-2}s^{-1}$, spectra of red light region and 16 hour light periods on 50 mL SH liquid medium in 4 weeks culture. To increase of the scopolamine contents in tumor calli, the optimum concentration of nitrogen source were 1.8 mM NH$_4$+ and 40 mM NO$_3$. The optimum elicitor concentration for production of scopolamine were 10 mg/L chitosan and 15 mg/L yeast extract. The effect of precursors were good at the concentration of 0.2 mM tropine and 0.3 mM tropic acid, respectively. In order to increase of growth and scopolamine contents. we induced mutant from Datura metel L. tumor callus. Mutants of tumor calli were obtained by 3 Krad, 4 Krad and 6 Krad of ${60}^Cor-ray$. Among them, 3 Krad tumor callus was excellent on the growth and teratoma induction. The 4 Krad tumor callus was negligible for both growth and teratoma induction. But the 6 Krad tumor callus was the best in growth and teratoma induction. The formation of the mutant calli can be enhanced through hormonal combination of 1 mg/L 2,4-dichlorophenoxyacetic acid and 0.5 mg/L benzyladenine. We carry out selection mutant tumor calli for high content tropane alkaloid and suspension cultures for scopolamine production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Nuclear Engineering and Technology
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• v.43 no.4
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• pp.391-398
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• 2011

The U metal chips generated in developing nuclear fuel and a gamma radioisotope shield have been stored under immersion of water in KAERI. When the water of the storing vessels vaporizes or drains due to unexpected leaking, the U metal chips are able to open to air. A new oxidation treatment process was raised for a long time safe storage with concepts of drying under vacuum, evaporating the containing water and organic material with elevating temperature, and oxidizing the uranium metal chips at an appropriate high temperature under conditions of controlling the feeding rate of oxygen gas. In order to optimize the oxidation process the uranium metal chips were completely dried at higher temperature than $300^{\circ}C$ and tested for oxidation at various temperatures, which are $300^{\circ}C$, $400^{\circ}C$, and $500^{\circ}C$. When the oxidation temperature was $400^{\circ}C$, the oxidized sample for 7 hours showed a temperature rise of $60^{\circ}C$ in the self-ignition test. But the oxidized sample for 14 hours revealed a slight temperature rise of $7^{\circ}C$ representing a stable behavior in the self-ignition test. When the temperature was $500^{\circ}C$, the shorter oxidation for 7 hours appeared to be enough because the self-ignition test represented no temperature rise. By using several chemical analyses such as carbon content determination, X-ray deflection (XRD), Infrared spectra (IR) and Thermal gravimetric analysis (TGA) on the oxidation treated samples, the results of self-ignition test of new oxidation treatment process for U metal chip were interpreted and supported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.5-9
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• 2011

M$\ddot{o}$ssbauer and Raman spectrum studies have been carried out on the 2b-site Fe ion in the Ba-ferrite (M-type). The thermal dynamics of Fe ion was analyzed by M$\ddot{o}$ssbauer spectra at different angles between the $\gamma$-ray direction and c-axis. The vibration on the 2b-site was more active compare to other direction and had very strong intensity in the Raman spectrum.

• Microbiology and Biotechnology Letters
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• v.38 no.3
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• pp.235-243
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• 2010

For decades, traditional mutation breeding technologies using spontaneous mutation, chemicals, or conventional radiation sources have contributed greatly to the improvement of crops and microorganisms of agricultural and industrial importance. However, new mutagens that can generate more diverse mutation spectra with minimal damage to the original organism are always in need. In this regard, ion beam irradiation, including proton-, helium-, and heavier-charged particle irradiation, is considered to be superior to traditional radiation mutagenesis. In particular, it has been suggested that ion beams predominantly produce strand breaks that often lead to mutations, which is not a situation frequently observed in mutagenesis induced by gamma-ray exposure. In this review, we briefly describe the general principles and history of particle accelerators, and then introduce their successful application in ion beam technology for the improvement of crops and microbes. In particular, a 100-MeV proton beam accelerator currently under construction by the Proton Engineering Frontier Project (PEFP) is discussed. The PEFP accelerator will hopefully prompt the utilization of ion beam technology for strain improvement, as well as for use in nuclear physics, medical science, biology, space technology, radiation technology and basic sciences.