• Title/Summary/Keyword: Gallium nitride

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A study on the growth behavior of AlN single crystal according to the change of N2 in HVPE propcess (HVPE(Hydride Vapor Phase Epitaxy) 법을 적용한 N2 양의 변화에 따른 AlN 단결정의 성장 거동에 관한 연구)

  • Kyung-Pil Yin;Seung-Min Kang
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.2
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    • pp.61-65
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    • 2024
  • HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N2) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

A Study on the Electrical Characteristics with Design Parameters in GaN Power Static Induction Transistor (GaN Power SIT의 설계변수에 따른 전기적 특성변화에 관한 연구)

  • Oh, Ju-Hyun;Yang, Sung-Min;Jung, Eun-Sik;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.9
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    • pp.671-675
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    • 2010
  • Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

Suggestion and Design of GaN on Diamond Structure for an Ideal Heat Dissipation Effect and Evaluation of Heat Transfer Simulation as Different Adhesion Layer (이상적인 열방산 효과를 위한 GaN on Diamond 구조의 제안과 접합매개층 종류에 따른 열전달 시뮬레이션 비교)

  • Kim, Jong Cheol;Kim, Chan Il;Yang, Seung Han
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.5
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    • pp.270-275
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    • 2017
  • Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

Design of Amplifier Pallet for DPD Using Gallium Nitride Device (질화갈륨 소자를 이용한 DPD용 Amplifier Pallet 개발)

  • Oh, Seong-Min;Park, Jung-Hoon;Cho, Sam-Uel;Lee, Jae-Hoon;Lim, Jong-Sik
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.76-79
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    • 2010
  • 본 논문에서는 고 효율 및 고 출력 특성을 가지는 질화갈륨(GaN) 소자를 이용하여 WiMAX 및 LTE System에 사용될 수 있는 DPD용 Pallet Amplifier를 제작하였다. 제작된 Pallet Amplifier는 Pre-drive로써 저 전류의 MMIC를 채택하고, Drive 단과 Main 단에 15W 급과 30W 급의 질화갈륨 소자를 사용 하였으며, 추가적인 효율 개선을 위해 PCB상에 Doherty Structure를 적용함으로써 보다 높은 효율을 구현하였다. 제작된 Pallet Amplifier는 음 전원 Bias 제어 회로, 온도에 따른 Gain 보상회로, Sequence 회로 및 Main 전원 Drop에 따른 보호 회로를 구현하였다. WiMAX Signal을 이용한 Modulation Power 10Watt Test에서 약 36.8~38.3%의 Pallet 효율과 DPD Solution인 TI GC5325SEK DPD Board 사용 시 ACLR은 약 46dBc 이상을 가지는 것으로 측정되었다. 본 논문에서 제작된 Pallet Amplifier는 Upper Band와 Lower Band로 나누어 제작되었던 기존 Pallet Amplifier와 달리 하나의 Pallet Amplifier로 2496~2690MHz에서 모두 사용하면서 종전에 사용되고 있는 Pallet Amplifier에 비해 Size가 최소 10% 이상 축소되어 효율 및 크기 면에서 종전 Pallet Amplifier보다 큰 이점을 갖는다.

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Trends in Wide Band-gap Semiconductor Power Devices for Automotive, Power Conversion Modules and ETRI GaN Power Technology (자동차용 WBG 전력반도체 및 전력변환 모듈과 ETRI GaN 소자 기술)

  • Ko, S.C.;Chang, W.J.;Jung, D.Y.;Park, Y.R.;Jun, C.H.;Nam, E.S.
    • Electronics and Telecommunications Trends
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    • v.29 no.6
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    • pp.53-62
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    • 2014
  • 본고는 최근 화두가 되고 있는 에너지 절감을 위해 고효율, 친환경의 WBG(Wide Band-Gap) 화합물반도체인 SiC(Silicon Carbide), GaN(Gallium Nitride) 전력반도체 소자 및 전력변환 모듈의 기술동향과 ETRI에서 연구개발 진행 중인 GaN 전력반도체 관련 기술에 대해 기술한다. WBG 전력반도체는 기존의 실리콘 전력반도체와 비교하여 열 특성 향상, 고속 스위칭, 고전압/고전류 특성 및 스위칭 손실 최소화 등이 가능하고 이에 따른 시스템의 소형화 및 전력효율 향상 효과를 얻을 수 있다. 특히, GaN 전력반도체 소자는 시장이 가장 넓게 형성되어 있는 900V 이하에 적용이 가능하며, 앞으로 시장이 커질 것으로 예상되는 HEV(Hybrid Electric Vehicle)/EV(Electric Vehicle)의 친환경 자동차에도 활용될 것으로 기대되고 있다. 본고는 최근의 일본과 미국에서의 WBG 전력반도체에 대한 관심 및 투자 방향과 GaN 전력반도체 소자에 대한 해외 기업의 업계동향에 대해서도 함께 살펴본다. 이러한 WBG 전력반도체에 대한 해외 선진업체의 산업동향과 더불어 ETRI에서 연구개발 중인 GaN 전력반도체 기술현황에 대해 전력소자 설계 및 제조공정, 패키징, 전력모듈 설계 제작 기술을 포함하여 기술한다.

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Effects of Surface Roughness and Thermal Treatment of Buffer Layer on the Quality of GaN Epitaxial Layers (Buffer layer의 표면 거칠기와 열처리조건이 GaN 에픽층의 품질에 미치는 영향)

  • 유충현;심형관;강문성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.7
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    • pp.564-569
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    • 2002
  • Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

Photo-assisted GaN wet-chemical Etching using KOH based solution (KOH계열 수용액을 이용한 GaN 박막의 photo-assisted 식각 특성)

  • Lee, Hyoung-Jin;Song, Hong-Ju;Choi, Hong-Goo;Ha, Min-Woo;Roh, Cheong-Hyun;Lee, Jun-Ho;Park, Jung-Ho;Hahn, Cheol-Koo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.339-339
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    • 2010
  • Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

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Next Generation Energy Efficient Semiconductors: Status of R&D of GaN Power Devices (차세대 고효율/고출력 반도체: GaN 전력소자 연구개발 현황)

  • Mun, J.K.;Min, B.G.;Kim, D.Y.;Chang, W.J.;Kim, S.I.;Kang, D.M.;Nam, E.S.
    • Electronics and Telecommunications Trends
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    • v.27 no.4
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    • pp.96-106
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    • 2012
  • 차세대 에너지 절감 반도체로 각광을 받고 있는 GaN(Gallium Nitride) 전자소자의 연구개발 동향, 특히 전력증폭기용 GaN 기술동향에 관하여 기술하였다. GaN 전자소자는 와이드 밴드갭($E_g=3.4eV$)과 고온($700^{\circ}C$) 안정성 등 재료적인 특징으로 인하여 고출력 RF(Radio Frequency) 전력증폭기와 고전력 스위칭 소자로서 큰 장점을 갖는다. 본고에서는 차세대 GaN 전력소자의 주요 특성을 소개하고 미국, 유럽, 일본을 중심으로 한 대형 국책 연구 프로젝트 분석을 통한 GaN 전력소자 연구개발 방향 및 GaN 전력소자 시장과 주요 특허 현황을 살펴보았다. 또한 국내의 주요 연구개발 현황과 현재 수행 중이거나 완료된 연구개발 과제를 간략하게 언급하였다. 이러한 연구개발 현황분석을 통하여 GaN 기술의 중요성과 함께 국산화의 시급성을 강조하고자 한다.

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A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier (GaN FET 기반 동기정류기를 적용한 저전압-대전류 DC-DC Converter 효율예측)

  • Jeong, Jea-Woong;Kim, Hyun-Bin;Kim, Jong-Soo;Kim, Nam-Joon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.4
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    • pp.297-304
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    • 2017
  • The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

Enhancing the Performance of InGaN Photoelectrode by Using YAG:Ce3+@ beta-SiALON Phosphor (YAG:Ce3+@ beta-SiALON 형광체를 이용한 InGaN 광전극의 효과적인 물분해)

  • Bae, Hyojung;Lee, Daejang;Cha, An-Na;Ju, Jin-Woo;Moon, Youngboo;Ha, Jun-Seok
    • Current Photovoltaic Research
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    • v.8 no.2
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    • pp.50-53
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    • 2020
  • GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce3+ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.