• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.3
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• pp.1-9
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• 1973

Gallium phosphide light emitting diode (LED) has been fabricated first time for pilot lamp and numeric display purposes. Bright red light is obtained in forward bias at very low current of one to five mA. A typical p-n junction is formed by liquid phase epitaxial growth on a n-type gallium physphide substrate. The crystal growth is achieved at about 1300$^{\circ}$K after the equilibrium of the gallium solution followed by tipping operation. The ohmic contact is made by wire bonding by thermal compression technique. The entire process is well fit for laboratory scale to fabricate a few hundred diodes for mainly demonstration purpose. For mass production, a large sum of the capital investment is required. The great merit of gallium phosphide LED is at low current operation, and green light emission is also obtainable by nitrogen doping.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.131.2-131
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.141-144
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• 1997

High quality 3C-SiC epilayer was grown on Si(111) at 125$0^{\circ}C$ using chemical vapor deposition(CVD) technique by pyrolyzing tetramethylsilane(TMS). 3C-SiC epilayer was doped by tetramethylgallium(TMGa) during the CVD growth. The crystallinity of 3C-SiC was significantly enhanced by doping the gallium impurity.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1332_1333
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• 2009

The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.204-208
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• 2011

In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.

• 전기의세계
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• v.20 no.2
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• Journal of Magnetics
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• v.18 no.3
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• pp.240-244
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• 2013

The influences of Gallium doping on the magnetic microstructures and corrosion behaviors of Nd-Fe-B-Ti-C alloys are investigated. The cooling rate for obtaining fully amorphous structure is raised, and the glassforming ability is improved by the Ga addition. The High Resolution Transmission Electron Microscopy image shows that the ${\alpha}$-Fe and $Fe_3B$ soft magnetic phases become granular surrounded by the $Nd_2Fe_{14}B$ hard magnetic phase. The rms and $({\Delta}{\varphi})_{rms}$ value of Nd-Fe-B-Ti-C nanocomposite alloy thick ribbons in the typical topographic and magnetic force images detected by Magnetic Force Microscopy(MFM) decreases with 0.5 at% Ga addition. The corrosion resistances of $Nd_9Fe_{73}B_{12.6}C_{1.4}Ti_{4-x}Ga_x$ (x = 0, 0.5, 1) alloys are enhanced by the Ga addition. It can be attributed to the formation of more amorphous phases in the Ga doped samples.