Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
- /
- Pages.1332_1333
- /
- 2009
Electrical characteristics of p-PEDOT/n-GZO heterojunction
p-PEDOT/n-GZO heterojunction의 전기적 특성
-
Lee, Jae-Sang
(Kwangwoon University)
;
- Park, Dong-Hoon (Kwangwoon University) ;
-
Koo, Sang-Mo
(Kwangwoon University)
;
- Lee, Sang-Yeol (Korea Institute of Science and Technology)
- Published : 2009.07.14
Abstract
The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.
Keywords