• Proceedings of the Korean Society of Applied Entomolohy Conference
• /
• 2003.10a
• /
• pp.136-136
• /
• 2003

• ETRI Journal
• /
• v.37 no.4
• /
• pp.736-742
• /
• 2015

A serial concatenated decoding algorithm with dynamic threshold is proposed for low-density parity-check codes with short and medium code lengths. The proposed approach uses a dynamic threshold to select a decoding result from belief propagation decoding and order statistic decoding, which improves the performance of the decoder at a negligible cost. Simulation results show that, under a high SNR region, the proposed concatenated decoder performs better than a serial concatenated decoder without threshold with an Eb/N0 gain of above 0.1 dB.

• Proceedings of the IEEK Conference
• /
• 2002.07a
• /
• pp.540-541
• /
• 2002

In this paper, the performance of upidirectional and hi-directional regenerative erbium-doped fiber amplifier (EDFA) is compared. The systems are operating above laser oscillation threshold. The experimental results show that the unidirectional regenerative EDFA has a better performance than the hi-directional.

• Management Science and Financial Engineering
• /
• v.22 no.1
• /
• pp.13-20
• /
• 2016

We investigate the optimal consumption and investment problem when a working debtor has an option to file for bankruptcy. By applying the duality approach, the closed-form solutions are obtained for the case of CRRA utility function. The optimal bankruptcy time is determined by the first hitting time when the financial wealth hits the wealth threshold derived from the optimal stopping time problem. Moreover, the numerical results show that the investment increases as the wealth approaches the threshold and the value gain from the bankruptcy option is vanished as wealth increases.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.12
• /
• pp.53-62
• /
• 1999

Center of photon mass(CPM), defined as the center of axial photon distribution, is proposed as a unified design parameter, which contains information about both threshold gain and nonuniformity of axial photon distribution in DFB lasers with low and high-reflection facets. The CPM is inversely proportional to threshold gain and is 0.5 when axial photon distribution is the most uniform. Therefore, a general rule of single-frequency leser design is that main mode CPM should be around 0.5 for-uniform axial photon distribution and side mode CPM should be minimized to maximize the threshold gain difference.

• The Journal of the Convergence on Culture Technology
• /
• v.7 no.3
• /
• pp.463-468
• /
• 2021

In this paper, when a refractive index grating and a gain grating were simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, a dielectric film coating was applied so that reflection did not occur on the right mirror surface, so that 𝜌_r=0. In case of 𝛿L>0, the characteristics of the oscillation frequency and oscillation gain were analyzed. When the grating phase of the left mirror surface continues to decrease from 𝜋, the graph lines of each mode gradually shift to the left. In case of 𝜅L=10, the threshold gain of the oscillation mode is the lowest. In this case, the mode selectivity is relatively low. From 𝜅L=0.5 to 𝜅L=6, the mode selectivity and the frequency stability are excellent. In the case of DFB lasers with an anti-reflection coated mirror, the threshold gain of the oscillation mode increases but the mode selectivity is about twice as excellent, compared with DFB lasers of having two cleaved facets.

• Journal of the Optical Society of Korea
• /
• v.6 no.3
• /
• pp.59-71
• /
• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• Korean journal of applied entomology
• /
• v.47 no.4
• /
• pp.407-411
• /
• 2008

This study was conducted to estimate the economic injury level (EIL) and economic threshold (ET) of the green peach aphid, Myzus persicae, on Chinese cabbage (Brassica campestris var). The changes of biomass of Chinese cabbage and M. persicae density were investigated after introduction of M. persicae at different density (0, 2, 5, 10, 15, and 20 per plant; inoculated at 10d after planting). The densities of M. persicae largely increased from the above initial densities to 0, 92.3, 177.4, 406.9, 440.4, and 471.3 aphids per plant at 18d after the initial inoculation, respectively. The biomass of Chinese cabbage significantly decreased with increasing the initial inoculated density of M. persicae: 602.0, 264.2, 262.0, 109.3, 151.0, and 67.3 g in above plots with different initial densities, respectively. The relationship between cumulative aphid days (CAD) and yield loss (%) of Chinese cabbage was well described by a nonlinear logistic equation. Using the estimated equation, EIL of M. persicae on Chinese cabbage was estimated 25 CAD per plant based on the yield loss 13%, which take into account of an empirical gain threshold 5% and marketable rate 92% of spring Chinese cabbage. Also, ET was calculated at 80% of EIL: 20 aphids per plant. Until a more elaborate EIL-model is developed, the present result may be useful for M. persicae management at early growth stage of Chinese cabbage.

• Journal of the Optical Society of Korea
• /
• v.6 no.3
• /
• pp.108-116
• /
• 2002

Lasing modes of laser-diode-pumped fiber grating lasers are analyzed by coupled-mode theory. First, a power series solution of the coupled-mode equations is derived under the assumption of an exponentially-decreasing longitudinal modal gain profile for a laser-diode-pumped grating section, followed by determination of the transfer matrix for such a section. Based on these results, an eigenvalue equation for oscillation is then derived and solved numerically for the lasing modes of uniform and phase-shifted fiber grating lasers. Comparisons made with the uniform-gain results indicate that, surprisingly, the lasing mode characteristics are not as significantly altered as might be expected in most cases, even for a highly nonuniform gain profile. In the case of a phase-shifted grating, the phase-shift position appears to have a much greater impact on determining the threshold gain, the modal field distribution, and the front-to-back output power ratio.

• Journal of IKEEE
• /
• v.17 no.3
• /
• pp.324-331
• /
• 2013

In this paper, we implemented memristor emulator circuit on Printed Circuit Board (PCB) and observed the inherent pinched hysteresis characteristic of memristors by measuring the emulator circuit on PCB. The memristor emulator circuit implemented on PCB is composed of simple discrete devices not using any complicated circuit blocks thus we can integrate the memristor emulator circuits in very small layout area on Silicon substrate. The programmable gain amplifier is designed using the proposed memristor emulator circuit and verified that the amplifier's voltage gain can be controlled by programming memristance of the emulator circuit by circuit simulation. Threshold switching is also realized in the proposed emulator circuit thus memristance can remain unchanged when the input voltage applied to the emulator circuit is lower than VREF. The memristor emulator circuit and the programmable gain amplifier using the proposed circuit can be useful in teaching the device operation, functions, characteristics, and applications of memristors to students when thet cannot access to device and fabrication technologies of real memristors.