• Journal of Magnetics
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• v.17 no.2
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• pp.86-95
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• 2012

This study investigated the effects of adding a third alloying element, Ni, to create $Fe_{70-x}Pd_{30}Ni_x$ (x = 2, 4, 6, 8 at.% Ni) ferromagnetic shape memory alloys (FSMAs). The Ni replaced a portion of the Fe. The $Fe_{70-x}Pd_{30}Ni_x$ alloys were homogenized through hot and cold forging to gain a ~38% reduction in thickness, next they were solution-treated (ST) with annealing recrystallization at $1100^{\circ}C$ for 8 h and quenched in ice brine, and then aged at $500^{\circ}C$ for 100 h. Investigation of the microstructures and magnetostriction indicated that the greater Ni amount in the $Fe_{70-x}Pd_{30}Ni_x$ alloys reduced saturation magnetostriction at room temperature (RT). It was also observed that it was more difficult to generate annealed recrystallization. However, with greater Ni addition into the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys, the $L1_0+L1_m$ twin phase decomposition into stoichiometric $L1_0+L1_m+{\alpha}_{bct}$ structures was suppressed after the $500^{\circ}C$/100 h aging treatment. The result was that the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys maintained a high magnetostriction and magnetostrictive susceptibility (${\Delta}{\lambda}{_\parallel}{^s}/{\Delta}H$) after the alloys were aged at $500^{\circ}C$ for 100 h. This magnetic property of the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys make it suitable for application in a high temperature (T > $500^{\circ}C$) and high frequency environments.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.5
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• pp.563-569
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• 2015

A chemical reaction occurring in CSTR (Continuous Stirred Tank Reactor) is significantly affected by the concentration, temperature, pressure, and reacting time of materials, and thus it has strong nonlinear and time-varying characteristics. Also, when an existing linear PID controller with fixed gain is used, the performance could deteriorate or could be unstable if the system parameters change due to the change in the operating point of CSTR. In this study, a technique for the design of a fuzzy PD plus I controller was proposed for the temperature control of a CSTR process. In the fuzzy PD plus I controller, a linear integral controller was added to a fuzzy PD controller in parallel, and the steady-state performance could be improved based on this. For the fuzzy membership function, a Gaussian type was used; for the fuzzy inference, the Max-Min method of Mamdani was used; and for the defuzzification, the center of gravity method was used. In addition, the saturation state of the actuator was also considered during controller design. The validity of the proposed method was examined by comparing the set-point tracking performance and the robustness to the parameter change with those of an adaptive controller and a nonlinear proportional-integral-differential controller.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.11
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• pp.15-21
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• 1999

The scalability of optical cross-connect nodes is analyzed based on the limiting factor of transmission performance. The limiting factors considered are ASE noise accumulation and gain saturation in the optical amplifiers, and crosstalk in both wavelength multiplexers/demultiplexers and optical switches. When the wavelength multiplexer/demultiplexers crosstalk is lower than 25dB, Power Penalty is below 1dB for the cascaded transmission of 10 nodes with 4 input/output ports. When 10Gbps signals are transmitted through nodes with 4 and 16 input/output Ports, performance degradation due to switch crosstalk is dominant compared to that due to ASE noise accumulation if the switch crosstalk is larger than 30dB and 45dB, respectively. For the single stage transmission of 10Gbps signal with 21dB fiber link loss, the maximum loss of optical cross-connect nodes must be under 34dB to achieve the BER of $10^{-12}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.641-647
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• 2011

This paper describes a design and fabrication of SDLVA. The SDLVA operates 0.5~2.0 GHz with -70~0 dBm dynamic range. The SDLVA is consisted of 5-stage RF block, 2-stage detector block and summation circuit using clamping op-amp to improve video linearity. The result of measure, SDLVA of RF path has over 73 dB small-signal gain and 10.1~12.2 dBm saturation power. The video path has 25 mV/ dB${\pm}$1.0 mV and under ${\pm}$1.5 dB video linearity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2697-2702
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• 2014

In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.307-310
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• 1999

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.266-271
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• 2009

We have investigated the lasing characteristics of GaAs-based 1300 nm wavelength region InAs Quantum Dot Laser Diode grown by Migration Enhanced Molecular Beam Epitaxy. Under a pulsed and CW operation, we observed the state switching of lasing wavelength from ground state (1302 nm) to excited state (1206 nm) due to the gain saturation of ground state. Under a pulsed operation, $J_{th}=92A/cm^2$, $\lambda_L=1311\;nm$ and under a CW operation, $J_{th}=247A/cm^2$, $\lambda_L=1320\;nm$.

• Animal Bioscience
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• v.34 no.5
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• pp.895-903
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• 2021

Objective: The objective of this study was to investigate the effects of various dietary unsaturated to saturated fatty acids ratios (UFA to SFA ratios) on growth performance, carcass traits, blood lipid parameters, tissue fatty acid (FA) composition, and meat quality of finishing pigs. Methods: A total of 45 crossbred pigs ([Duroc×Landrace]×Yorkshire), with an average initial body weight of 60.3±2.4 kg, were randomly allocated to three treatment groups of 1:1, 2:1, and 3:1 dietary UFA to SFA ratios. Results: Both average daily gain and average daily feed intake of pigs were decreased linearly (p<0.05), whereas backfat thickness was decreased linearly (p<0.05) with increasing of dietary UFA to SFA ratio. Serum triglyceride and low density lipoprotein cholesterol were decreased quadratically or linearly (p<0.05) respectively, whereas high density lipoprotein cholesterol was increased quadratically (p<0.05) with increasing dietary UFA to SFA ratio. In M. longissimus thoracis, the proportion of C18:1 and monounsaturated FA was decreased linearly (p<0.05), whereas the proportion of C18:2n-6, C20:4n-6 and polyunsaturated FA (PUFA) were increased linearly (p<0.05) as dietary UFA to SFA ratio increased. In the subcutaneous adipose tissue, the proportion of SFA was decreased linearly (p<0.05), whereas the proportion of n-6 PUFA, n-3 PUFA, and the UFA to SFA ratios were increased linearly (p<0.05) with increasing of dietary UFA to SFA ratio. Meat color scores and shear force of pigs were decreased linearly (p<0.05), whereas drip loss and cooking loss were increased linearly (p<0.05) with increasing of dietary UFA to SFA ratio. Conclusion: Appropriately boosted dietary UFA to SFA ratio could be conductive to optimize blood lipid parameters and tissue FA composition. However, when the ratio is too high or too low it tends to have negative effects on growth performance and meat quality.