• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.81-85
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• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.194-194
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• 2013

본 연구에서는 a-IGZO 활성층에 다른 dose량의 수소 이온을 조사하여 박막 트랜지스터 소자의 효과를 알아보고, 수소 이온 조사 후, 이온 조사에 따른 불안정한 소자 특성을 안정화시킬 목적으로 후 열처리에 따른 소자 특성을 알아보았다. a-IGZO 활성층에 수소이온을 110keV의 에너지로 가속하여, 수소 이온 조사량을 $1{\times}10^{14}\;ion/cm^2$, $1{\times}10^{15}\;ion/cm^2$, $1{\times}10^{16}\;ion/cm^2$로 조절하였고, 후 열처리 공정은 a-IGZO 활성층에 $1{\times}10^{16}\;ion/cm^2$ 이온조사 후, 대기 분위기로 $150^{\circ}C$, $250^{\circ}C$, $350^{\circ}C$ 각각 1시간 동안 열처리를 진행하였다. Spectroscopy Ellipsometry (SE)로 측정된 3eV이상의 광학적 밴드 갭은 기존에 보고 되었던 비정질 산화물 반도체와도 유사한 밴드 갭을 가지고 있음을 확인하였다. IGZO 박막을 활성층으로 사용하여 수소 이온 조사 공정 후 제작한 박막 트랜지스터는 3.89 $cm^2/Vs$의 전계효과이동도와 0.59V/decade의 문턱전압 이하 기울기를 보았다. 수소 이온 조사 공정을 통한 IGZO 박막 트랜지스터의 output curve가 다소 불안정함을 보였으나, $1{\times}10^{16}\;ion/cm^2$ 이온조사 후, 대기 분위기로 $150^{\circ}C$, $250^{\circ}C$, $350^{\circ}C$ 각각 1시간동안 열처리를 진행한 박막 트랜지스터의 특성은 소자의 불안정성을 보완해줄뿐만 아니라 $350^{\circ}C$ 열처리에서는 16.9 $cm^2/Vs$의 전계효과이동도와 0.33V/decade의 문턱전압 이하 기울기와 같이 더 향상된 박막 트랜지스터의 전기적 특성 결과를 관측하였다. 기존의 연구 되어진 a-IGZO 활성층에 수소이온조사와 후 열처리 공정에 따라 광학적 밴드 갭 에너지 준위의 변화와 박막 및 박막 트랜지스터 특성을 변화시킨다는 결과를 도출하였다.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.62-71
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• 2019

Al1050 and Al7075 alloy specimens were exposed to atmospheric conditions for 24 months and analyzed by Transmission Electron Microscopy to characterize their corrosion behavior and oxide film characteristics, especially focusing on intergranular corrosion or oxidation. In general, the intergranular oxygen penetration depth of Al1050 was deeper than Al7075. Since O and Si signals were overlapped at the oxidized grain boundaries of Al1050 and Mg is not included in Al1050, it is concluded that Si segregated along the grain boundaries directly impacts on the intergranular corrosion of Al1050. Cr-Si or Mg-Si intermetallic particles were not observed along the grain boundaries of Al7050, but Mg-Si particle was barely observed in the matrix. 10-nm size Mg-Zn particles were also found all over the matrix. Mg was mainly observed along the oxidized grain boundary of Al7075, but Si was not detected due to the Mg-Si particle formation in the matrix and relatively low concentration of Si in Al7075. Therefore, it is thought that Mg plays an important role in the intergranular corrosion of Al7075 under atmospheric corrosion conditions.

• Journal of the Korean Society of Radiology
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• v.17 no.4
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• pp.625-631
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• 2023

The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.359-365
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• 2023

In order to satisfy the requirements of dynamic X-ray imaging with high frame rate and low image lag, minimizing parasitic capacitance in photodiode and overlapped electrodes in pixels is critically required. This study presents duoPIX^TM dynamic X-ray imaging sensor composing of readout thin film transistor, reset thin film transistor and photodiode in a pixel. Furthermore, dynamic X-ray detector using duoPIX^TM imaging sensor was manufactured and evaluated its X-ray imaging performances such as frame rate, sensitivity, noise, MTF and image lag. duoPIX^TM dynamic X-ray detector has 150 × 150 mm² imaging area, 73 um pixel pitch, 2048 × 2048 matrix resolution(4.2M pixels) and maximum 50 frames per second. By means of comparison with conventional dynamic X-ray detector, duoPIX^TM dynamic X-ray detector showed overall better performances than conventional dynamic X-ray detector as shown in the previous study.