• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.138-139
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• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.31-40
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• 2014

In present study, we geochemically investigated the fresh coal ashes and the saline ash pond of an electric power plant in Korea, which burns imported bituminous coals. The goals are to see the chemical changes of the ash pond by reaction with coal ashes and to investigate the relative leachability of elements from the ashes by reaction with saline waters. For this study, one fresh fly ash, one fresh bottom ash, and 7 water samples were collected. All the ash samples and 2 water samples were analyzed for 55 elements. The results indicated that the fly ashes are enriched with chalcophilic elements such as Cu, Zn, Ga, Ge, Se, Cd, Sb, Au, Pb, and B relative to other elements. On the other hand, concentrations of As, Ba, Co, Ga, Li, Mn, Mo, Sb, U, V, W, and Zr are much higher in the ash pond than those dissolved in the seawater. Ag, Bi, Li, Mo, Rb, Sb, Sc, Se, Sn, Sr, and W show high ratios of elemental concentrations in pond water to those in the fly ash. Our results imply that the leaching of trace elements is regulated by geochemical controls such as solubility and adsorption even though the trace elements are relatively enriched on the ash surfaces after the coal combustion due to their volatilities.

• Economic and Environmental Geology
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• v.45 no.6
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• pp.623-641
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• 2012

The Janggun lead-zinc-silver deposit is hydrothermal-metasomatic deposit. We have sampled wallrock, hydrother-maly-altered rock and lead-zinc-silver ore vein to study the element dispersion during wallrock alteration. The hydrothermal alteration that is remarkably recognized at this deposit consists of rhodochrositization and dolomitization. Wallrock is dolomite and limestone that consisit of calcite, dolomite, quartz, phlogopite and biotite. Rhodochrosite zone occurs near lead-zinc-silver ore vein and include mainly rhodochrosite with amounts of calcite, dolomite, kutnahorite, arsenopyrite, pyrite, chalcopyrite, sphalerite, galena and stannite. Dolomite zone occurs far from lead-zinc-silver ore vein and is composed of mainly dolomite and minor calcite, rhodochrosite, pyrite, sphalerite, chalcopyrite, galena and stannite. The correlation coefficients among major, trace and rare earth elements during wallrock alteration show high positive correlations(dolomite and limestone = $Fe_2O_3(T)$/MnO, Ga/MnO and Rb/MnO), high negative correlations(dolomite = MgO/MnO, CaO/MnO, $CO_2$/MnO, Sr/MnO; limestone = CaO/MnO, Sr/MnO). Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, MnO, As, Au, Cd, Cu, Ga, Pb, Rb, Sb, Sc, Sn and Zn. Remarkable loss elements are CaO, $CO_2$, MgO and Sr. Therefore, elements(CaO, $CO_2$, $Fe_2O_3(T)$, MgO, MnO, Ga, Pb, Rb, Sb, Sn, Sr and Zn) represent a potential tools for exploration in hydrothermal-metasomatic lead-zinc-silver deposits.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.163-164
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.76-76
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.90.3-90
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.92.4-92
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• 1998

• Journal of Industrial Technology
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• v.24 no.B
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• Toxicological Research
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• v.27 no.4
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• pp.205-209
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• 2011

The present study was performed to compare the antioxidative and whitening activities of fermented soybean extract (FSB) and non-fermented soybean extract (SB). Antioxidative and whitening activities of FSB and SB were evaluated by the determination of DPPH, superoxide radical and hydroxyl radical scavenging activities, linoleic acid inhibition activity, and tyrosinase inhibition activity. FSB showed the higher effect than SB in the antioxidative activities. Also FSB showed the better effect than SB in whitening activity. These results demonstrated that the fermentation played a more excellent role than the non-fermentation in antioxidation and whitening. Therefore, this study suggested that FSB could be a useful cosmetic ingredient for antioxidation and skin whitening.