• Journal of Sensor Science and Technology
• /
• v.27 no.3
• /
• pp.150-155
• /
• 2018

Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage significantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.154.2-154.2
• /
• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.66-72
• /
• 1995

Microstructural features of laser irradiated bulk target which consists of GeSbTe interrmertallic compounds were examined by analytical microscopy. It was found that in addition to vaporization, a liquid expulsion due to laer-material interatction is main contribution of materials removal in the sintered GaSbTe targets, The morphological change is qualitatively discussed in the present article.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.02a
• /
• pp.50-50
• /
• 1997

• Proceedings of the Korean Magnestics Society Conference
• /
• 2012.05a
• /
• pp.82-82
• /
• 2012

• Journal of Electrical Engineering and Technology
• /
• v.12 no.6
• /
• pp.2324-2332
• /
• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.94-94
• /
• 1999

반도체 Hall 효과를 이용하여 자계를 검출하여 이를 전압신호로 출력하는 자기센서로는 주로 GaAs, InSb, InAs 등의 박막이 사용되고 있다. 자기센서의 응용분야가 최근에는 직류전류의 무접촉 검출, 자동차의 무접촉 회전 검출, 산업용 기계의 제어용 무접촉 위치검출 분야로 확대되고 있어 그 수요가 급증하고 있다. 이중 Hall 소자의 응용분야중 많은 활용이 기대되고 있는 자동차용 무접촉 센서는 -4$0^{\circ}C$~15$0^{\circ}C$의 온도범위에서 안정하게 작동하여야 하므로 온도 안정성이 매우 중요하다. 그러나 Hall 소자 시장의 80%를 점유하고 있는 InSb Hall 소자는 온도가 올라감에 따라 저항이 급격히 낮아지는 성질을 가지고 있으므로 10$0^{\circ}C$ 이상의 온도에서 사용하는 것이 불가능하다. 한편 InAs(에너지갭~0.18eV)는 InSb보다 에너지 갭이 크므로 고온에서도 작동이 가능하고 자계변화에 따른 출력의 직진성이 매우 좋다는 장점을 가지고 있다. 이러한 InAs Hall 소자를 실현하기 위해서 가장 중요한 것이 고품위의 InAs의 박막 성장기술이다. InAs 박막을 성장하기 위해서 사용되고 있는 기판은 GaAs이다. 그러나 GaAs 기판과 InAs 박막 사이에는 약 7% 정도의 격자부정합이 존재하기 때문에 높은 이동도를 가지는 고품위 박막을 성장시키기가 매우 어렵다. 이에 본 연구에서는 분자선에피택시 방법을 이용하여 GaAs 기판위에 고품위의 InAs 박막을 성장하는 기술을 연구하였으며, 성장된 InAs 박막의 특성을 DCX 및 Hall effect 등으로 조사하였다. InAs 박막 성장시 기판은 <0-1-1> 방향으로 2$^{\circ}$ off 된 GaAs(100)를 사용하였다. InAs 박막성장시 기판온도는 48$0^{\circ}C$로 하고 GaAs buffer 두께는 2000$\AA$로 하여 As flux 및 Si doping 농도등을 변화시켰다. 그 결과 Si doping 농도 2.21$\times$1017/am에서 10,952cm2/V.s의 이동도를 얻었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.210-214
• /
• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.168-168
• /
• 2010

InAs는 0.35eV의 낮은 밴드갭을 가지며 상온에서 약 $30,000cm^2/Vs$의 높은 전자이동도를 보여, GaAs/AlGaAs 및 InGaAs/InP 2DEG HEMT에 이은 차세대 초고속 전자소자의 2DEG용 물질로 각광을 받고 있다. 그러나 InAs의 격자상수는 약 0.61nm로 이에 적절한 반절연기판을 구할수 없어, GaAs상에 Al(Ga)Sb를 이용하여 성장하는 방법으로 2DEG을 실현하고 있다. 상기 방법으로 상온에서 ${\sim}30,000cm^2/Vs$ 전자이동도를 보이는 InAs/AlSb 2DEG HEMT 소자를 여러 연구팀에서 시현하였으나, 실제적으로 응용하기 위해서 etch-stop층 또는 contact층의 제작이 용이치 않아 실제의 회로구현에는 어려움을 격고 있다. 이에 InGaAs/InP 2DEG내에 InAs를 넣어 InAs 2DEG을 제작하는 방법이 NTT[1]에 의해 제안되어, SPINTRONICS등의 InAs 2DEG이 필요한 곳에 응용되고 있다. [2] 본 발표에서는 고품질의 InAs 2DEG을 실현하기 위해, 다양한 성장 변수 (온도, As 분압, 성장 시퀀스, InAs층의 두께등)와 2DEG의 전기적특성간의 관계를 발표한다. 최종적으로 상온전자이동도 ${\sim}12,000cm^2/Vs$의 InAs 2DEG을 제작할수 있었으며, 이를 다양한 전자소자에 차후 응용할 예정이다.

• Korean Journal of Clinical Pharmacy
• /
• v.8 no.2
• /
• pp.122-132
• /
• 1998

SB-31 which contains Pursatilla, Licoris and Ginseng extracts was recently proved as an anticancer agent. In a preclinical effort to be applied this drug to human, pharmacokinetics of SB-31 was carried out in rats and rabbits. Glycyrrhizin(GZ), a saponin of Licoris was used as a standard ingradient for the pharmacokinetics of SB-31. The rat's blood, bile and urine samples were serially collected in femoral vein, common bile duct and bladder, respectively, after bolus i.v. injection at a dose of 1 or 1/5 ampul/rat and rabbit's blood samples from the marginal ear vein at a dose of 1 or 3 amp./rabbit. GZ and glycyrrhetic acid(GA), a major metabolite of GZ in the physiological samples were analysed by HPLC with UV detection. The decline of GZ in plasma concentration was generally biexponential at each dose. GZ was almost completely recovered in bile within 18 hour. GA wasn't detected in the samples with UV detector. In the rat, Vss and Kel at a dose of 1 and 1/5 ampul of SB-31 were $98.06\pm6.07\;ml,\;0.33\pm0.05\;hr^{-1}\;and\;65.46\pm11.19\;ml,\;0.68\pm0.25\;hr^{-1}$, respectively. Those in rabbits at a dose of 3 and 1 ampul of SB-31 were $235.24\pm30.72\;ml,\;0.13\pm0.36\;hr^{-1}\;and\;341.32\pm28.58\;ml,\;0.27\pm0.04\;hr^{-1}$, respectively. 'WinNonlin' was utilized for the compartmental analysis. A two-compartment model was chosen as the most appropriate pbarmaco-kinetic model. The data were best described by using a weighting factor of $1/y^2$. To evaluate the effect of SB-31 on cardiovascular system, serially diluted SB-31 was directly injected into coronary artery in the isolated perfused rat heart and the effect of PSF, PSH, saponins of Pursatilla, and SB-31 on PT, APTT of healthy human plasma was examined. Except the positive inotropic effect of ten times diluted solution of SB-31, there was no significant effect on LVDP, (- dp/dt)/(+dp/dt), heart rate and coronary flow in comparision with that of vehicle. SB-31 had no effect on PT but slightly delayed APTT about $6.9{\sim}11.5\%$. There was no significant effect of PSF and PSH on PT & APTT. Conclusively, SB-31 did not show any notable toxic effects on cardiovascular system.