[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5369/JSST.2018.27.3.150

Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation

Doh, Seung-Hyun (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)

Publication Information

Journal of Sensor Science and Technology / v.27, no.3, 2018 , pp. 150-155 More about this Journal

Abstract

Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage significantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.

Keywords

GaN MOSFET; trap density; trap distribution;

Citations & Related Records

Reference

1	K. S. Im, J. B. Ha, K. W. Kim, J. S. Lee, D. S. Kim, S. H. Hahm, and J. H. Lee, "Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate", IEEE Electron Device Lett., Vol. 31(3), pp. 192-194, 2010. DOI
2	H. B. Lee, H. I. Cho, H. S. An, Y. H. Bae, M. B. Lee, J. H. Lee, and S. H. Hahm, "A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si," IEEE Electron Device Lett., Vol. 27(2), pp. 81-83, 2006. DOI
3	C. J. Lee, "GaN SB-MOSFET and MSM UV photodetector for UV sensor array", M. S. thesis, Kyungpook National University, 2011.
4	H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett., Vol. 48(5), pp. 353-355, 1986. DOI
5	H. Gotoh, T. Suga, H. Suzuki, and M. Kimata, "Low temperature growth of gallium nitride", Jpn. J. Appl. Phys., Vol. 20(7), pp. L545-L548, 1981. DOI
6	M. Koike, T. Kimura, H. Kawaguchiya, A. Shimazaki, and S. Takeno, "Accurate TEM analysis of electron beam induced defects in GaN combined with defect-eliminated specimen preparation technique", Microsc. Microanal., Vol. 14(2002), pp. 2-3, 2006.
7	M. A. Reshchikov, and H. Morkoc, "Luminescence properties of defects in GaN", J. Appl. Phys., Vol. 97(6), pp. 061301-1-061301-95, 2005. DOI
8	S. B. Bae, K. W. Kim, Y. S. Lee, J. H. Lee, Y. Bae, and S. Cristoloveanu, "Capacitance-voltage characterization of surface-treated $Al_2O_3$ /GaN metal-oxide-semiconductor structures", Microelectron. Eng., Vol. 109, pp. 10-12, 2013. DOI
9	W. Huang, T. Khan, and T. P. Chow, "Comparison of MOS capacitors on n- and p-type GaN", J. Electron. Mater., Vol. 35(4), pp. 726-732, 2006. DOI
10	D. K. Kim, D. S. Kim, S. J. Chang, C. J. Lee, Y. Bae, S. Cristoloveanu, J. H. Lee, and S. H. Hahm, "Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown $n^+$ -Source/Drain on a Selectively Etched GaN", Jpn. J. Appl. Phys., Vol. 52(6R), pp. 061001-1-061001-5, 2013. DOI
11	SILVACO International Technical Staff, ATLAS User's Manual, SILVACO International, pp. 1009-1014, 2014.
12	SILVACO International Technical Staff, ATLAS User's Manual, SILVACO International, pp. 1077-1083, 2014.
13	SILVACO International Technical Staff, ATLAS User's Manual, SILVACO International, pp. 734-735, 2014.
14	H. C. Lee, S. Y. Hyun, H. I. Cho, C. Ostermaier, K. W. Kim, S. I. Ahn, K. I. Na, J. B. Ha, D. H. Kwon, C. K. Hahn, S. H. Hahm, H. C. Choi, and Jung-Hee Lee, "Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer", Jpn. J. Appl. Phys., Vol. 47(4S), pp. 2824-2827, 2008. DOI
15	V. A. Dmitriev, K. G. Irvine, C. H. Carter Jr., N. I. Kuznetsov, and E. V. Kalinina, "Electric breakdown in GaN p?n junctions", Appl. Phys. Lett., Vol. 68(2), pp. 229-231, 1996. DOI
16	M. Micovic, A. Kurdoghlian, P. Hashimoto, M. Hu, M. Antcliffe, P. J. Willadsen, W. S. Wong, R. Bowen, I. Milosavljevic, A. Schmitz, M. Wetzel, and D. H. Chow, "GaN HFET for W-band power applications", Tech. Dig. - Int. Electron Devices Meet. IEDM, pp. 5-7, San Francisco, U.S.A., 2006.
17	M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, "Metal semiconductor field effect transistor based on single crystal GaN", Appl. Phys. Lett., Vol. 62(15), pp. 1786-1787, 1993. DOI
18	Y.?F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. Denbaars, and U. K. Mishra, "Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors", Appl. Phys. Lett., Vol. 69(10), pp. 1438-1440, 1996. DOI
19	M. Asif Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, "High electron mobility transistor based on a $GaN/Al_xGa_{1-x}N$ heterojunction," Appl. Phys. Lett., Vol. 63(9), pp. 1214-1215, 1993. DOI