• Journal of Microbiology and Biotechnology
• /
• v.15 no.1
• /
• pp.22-28
• /
• 2005

Gibberellins (GAs) play important roles in plant growth and development. Fifty-four fungi were isolated from the roots of 4 kinds of Sesamum indicum plants, and the production of GAs was spectrophotometrically examined. The number of GA-producing fungi was two strains from S. indicum, four strains from Gold S. indicum, and five strains from Brown S. indicum. Eleven fungi with GAs-producing activity were incubated for seven days in 40 ml of Czapek's liquid medium at $25^{\circ}C$ and 120 rpm, and the amount of each GA in the medium was measured by gas chromatographymass spectrometery (GC-MS). Penicillium commune KNU5379 produced more $GA_3$, $GA_4$, and $GA_7$ than Gibberella fujikuroi, Fusarium proliferatum, and Neurospora crassa which are known as GAs-producing fungi. GAs-producing activity of the P. commune KNU5379 was shown to produce 71.69 ng of $GA_1$, 252.42 ng of $GA_3$, 612.00 ng of $GA_4$, 259.00 ng of $GA_7$, and 202.69 ng of $GA_9$ in 25 ml of liquid medium. Bioassay of culture fluid of GA-producing fungi was also performed on rice sprout.

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.637-640
• /
• 1998

A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4$\times$0.8 $\textrm{mm}^2$

• Journal of the Korean Institute of Telematics and Electronics B
• /
• v.30B no.7
• /
• pp.42-49
• /
• 1993

In this paper, switched-capacitor building block presented which are suitable for implementation in GaAs MESFET technology. They include a current source, a gain stage, and an operational amplifier. Switched-capacitor design techniques are discussed that minimize filter sentsitivity to finite gain of the GaAs operational amplifier. Simulation results are presented on third-order elliptic lowpass ladder filter at a sampling rate of 5GHz.

• Journal of the Korean Vacuum Society
• /
• v.7 no.1
• /
• pp.66-71
• /
• 1998

Two kinds of $Ga_2S_3:Er$ (type A and type B) single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The single crystals were crystallized into a monoclinic structure. The optical energy band gaps were found to 3.375 eV for the $Ga_2S_3:Er$ (type A) single crystal and 3.365 eV fir the $Ga_2S_3:Er$ (type B) single crystal at 13K. When the $Ga_2S_3:Er$ (type A and type B) single crystals were excited by the 325 nm-line of a Cd-He laser, Photoluminescence spectra of the $Ga_2S_3:Er$ (type A) single crystal exhibited blue emission band peaked at 444 nm and green and red emission bands peaked at 518 nm and 690 nm. Pgitikynubescebce soectra if the $Ga_2S_3:Er$ (typeB) single crystal showed green and red emission bands peaked at 513 nm and 695 nm. Sharp emission peaks in the two kinds if $Ga_2S_3:Er$ single crystal were observed near 525 nm, 553 nm, 664 nm, 812 nm, 986 nm, and 1540 nm and analysed as originating from the electron transitions between the energy levels of $Er^{3+}$ ion.

• KSBB Journal
• /
• v.5 no.3
• /
• pp.247-253
• /
• 1990

These studies were carried out to obtain the transformant from carrot cells by using binary vector pGA472 with NPT II gene to confer kanamycin resistance in the plant cells. The binary vector pGA472 was mobilized from E. coli MC1000 into A. tumefaciens strains isolated in the Korea, C23-1. K29-1, and disarmed Ti-plasmid PC2760, and A28l using a tri-parental mating method with E. coli HB101/pRK2013. Transconjugants, C23-1/pGA472, K29-1/pGA472, PC2 760/pGA472 and A28l/pGA472 were obtaind on the minimum AB media containing tetracycline and kanamycin, were comfirmed to hold the Ti-plasmid and pGA472 binary vector on the 0.7% agarose gel. Transformed carrot calli were initiated on the MS media supplemented with l00$\mu\textrm{g}$/ml kanamycin and 250$\mu\textrm{g}$/ml carbenicillin after co-cultivation of carrot explant and transconjugant Agrobacteria. Selected callus was grown vigouousley for subculture on the medium containing 100$\mu\textrm{g}$/ml kanamycin, thus indication that the selected callus was transformed with NPT II gene.

• Korean Journal of Optics and Photonics
• /
• v.16 no.3
• /
• pp.275-286
• /
• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.

• Journal of the Korean Vacuum Society
• /
• v.20 no.1
• /
• pp.35-41
• /
• 2011

In this study, the interface soaking effect in InAs/GaAs strained-layer superlattice (SLS) on crystalline phase modulation has been analyzed by the x-ray diffraction (XRD) curve. The strain variation induced by As and/or Sb soaking was determined by the separation angle between the substrate peak and the 0th-order superlattice satellite peak in the XRD spectra. Contrated that the As/InAs soaking arises minor GaAs-like interfacial layer, the Sb/GaSb soaking induces InSb-like one. The Fourier-transformed curves of the Pendellosung interference oscillation shows that the optimum soaking times of As/InAs and Sb/GaSb are 2 sec and 12 sec, at which the highest crystallineity has, respectively. An anomalous twin-peak phenomenon that a satellite peak splits into two peaks was observed in the SLS structure co-soaked by As and Sb at InAs${\rightarrow}$GaSb interfaces. We suggest that it may be resulted from coexistence of two kinds crystalline phases of InAsSb and GaAsSb due to intermixing of In${\leftrightarrow}$Ga and Sb${\leftrightarrow}$As.

• Electronics and Telecommunications Trends
• /
• v.31 no.6
• /
• pp.1-12
• /
• 2016

GaN 전력반도체는 와이드 밴드갭(Eg=3.4eV)과 높은 이동도 및 낮은 온-저항 특성으로 인하여 차세대 고속/저손실 고효율 전력반도체 소자로서 각광을 받고 있다. 그럼에도 불구하고 글로벌 GaN 전력반도체 기술개발과 상용화는 초기단계로 선진업체 캐치업과 추월이 가능한 분야이다. GaN 반도체의 재료적 장점과 현재 상용화된 200V 이하급과 650V급 GaN 전력반도체 소자의 글로벌 시장동향으로 볼 때 고속 스위칭과 전력모듈 소형화 및 시스템의 고효율화를 요구하는 제품응용에 특화해야할 것으로 판단된다. 특히 기존 Si 전력반도체 대비 고성능 GaN 제품의 저가격화뿐만 아니라 선진기업과의 경쟁력 확보를 위하여 6인치 기반 Au-free CMOS 호환 공정 개발을 통한 GaN 전력반도체 기술의 국산화와 신시장 선점을 위한 조기 상용화의 중요성을 강조하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.6
• /
• pp.867-872
• /
• 2016

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.459-459
• /
• 2013

Si (111) 기판 위에 plasma assisted molecular beam epitaxy 법으로 Si과 Mg doping된 GaN 나노막대를 각 각 성장하고 나노막대의 모양과 광학적 특성을 조사하였다. Si이 doping된 GaN 나노막대는 biaxial m-plane 방향의 변화로 별 모양을 갖는 것을 관찰하였고 Mg doping된 GaN 나노막대의 지름은 줄어드는 것을 scanning electron microscopy로 확인하였다. 본 연구에서는 이러한 변화의 원인을 stress 때문으로 보고 x-ray diffraction과 raman scattering 측정을 통하여 구조적 변화를 조사하였다. 또한, stress에 의한 GaN 나노막대의광학적 특성 변화를 photoluminescence을 통하여 조사하였다. Doping한 GaN 나노막대의 특성조사를 통해 GaN 나노막대 성장 시 발생되는 stress의 영향을 이해하는데 중요한 정보를 제공할 것이다.