• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.467-468
• /
• 2009

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to $150[^{\circ}C$] at intervals of 50[$^{\circ}C$]. As a result, at 300[$^{\circ}C$]of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.9
• /
• pp.781-786
• /
• 2005

The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.286-289
• /
• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.235-238
• /
• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• Advances in nano research
• /
• v.5 no.3
• /
• pp.193-201
• /
• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1096-1099
• /
• 2006

$II-III_2-(S,Se)_4$ structured of phosphor have been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, europium doped $BaGa_2S_4$ was prepared by solid-state method and we try to look into an application possibility due to an emissive property of UV region. Also, general sulfide phosphors were synthesized by using injurious $H_2S\;CS_2$ gas. However, this study prepared $BaGa_2S_4:Eu^{2+}$ phosphor is addition to excess sulfur under 5% $H_2/95%\;N_2$ reduction atmosphere. So, this process could large scale synthesis because of non-harmfulness and simple process. The photo-luminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could apply to green phosphor for white LED of three wavelengths.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11b
• /
• pp.43-48
• /
• 2004

Undoped and $Co^{2+}$-doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$. and $CaIn_2Se_4$ single crystals were grown by using the chemical transport reaction method The temperature dependence of the optical energy gap was well fitted by the Varshni equation. In the Co2+ - doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$, and $CaIn_2Se_4$ single crystals, two groups of impurity optical absorption peaks due to Co2+ sited in a Td symmetry were observed in the wavelength regions of 600 900 nm and 1350 1950 nm at 11 K.耀

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05c
• /
• pp.47-52
• /
• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2004.03a
• /
• pp.137-141
• /
• 2004

Many monopropellant thrusters use a catalyst for decompose the propellant, hydrazine. The catalyst directly affects the thruster performances and lifetime. Therefore, it is important to confirm that the catalyst is suitable for our thrusters. Until 2002, we used She1l405 catalyst, for satellite RCS thrusters, and H-IIA and M-V launch vehicle upper-stage RCS thrusters. In 2002, however, Shell Chemical Inc. ceased manufacturing She1l405 catalyst and transferred the product to AEROJET, where it was renamed S405. We subsequently investigated the characteristics of AEROJET's S405 catalyst and SOLVAY's KC12GA catalyst, (SOLVAY is a Belgian chemical company, and KC12GA is used for ASTRIUM's thruster) and conducted thruster firing tests using the new catalysts. After conducting, we confirm that the KC12GA catalyst was suitable for our thrusters, and decided to use KC12GA for two satellite programs.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.344-349
• /
• 2018

Low temperature variation of electrical characteristics for AlGaN/GaN/HEMT was studied. To investigate the effect of temperatures, transistor was cool down to $-178^{\circ}C$ and electrical characteristics were measured. The drain current density of an AlGaN/GaN HEMT with a gate length of $2{\mu}m$ was increased from 264 mA/mm to 388 mA/mm and the maximum transconductance was increased from 105 mS/mm to 134 mS/mm by decreasing the temperature to $-108^{\circ}C$. Also, the threshold voltage was shifted -0.39 V with the temperature. The reason for the variations was seemed to the reduced channel resistance corresponding to the temperature. However, most of the variation of the electrical characteristics takes places above $-108^{\circ}C$.