• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.86-91
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• 2004

Transiton-metal gallides attract wide interest as a candidate for high-temperature structural materials. In a wide composition range, in which it was known that Co-Ga alloy have CsCl (B2) crystallographic structure, a systematic study on the correlation between physical properties and electronic structures of Co-gallides was performed. $Co_{l-x}Ga$ $_{x}$ alloys ($0.35\leq$x$\leq0.55$) were prepared by arc-melting method and were annealed at $1000 ^{\circ}C$ for 48hour to increase the homogeneity. In this composition range all the prepared alloys have the CsCl (B2) structure. The chemical states and the electronic structure were studied by using x-ray photoemission spectroscopy (XPS), and x-ray absorption near-edge structure (XANES), and exhibit different physical properties depending on the composition. During the annealing, a significant oxidation has happened and all the oxygen atoms are incorporated with the Ga atoms to form a $Ga_2O_3$ phase. In a view point of electronic structure, the $Co_{l-x}Ga$ $_{x}$ alloys were formed by the Ga(p) - Co(d) hybridization.

• Journal of Surface Science and Engineering
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• v.43 no.2
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• pp.47-50
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• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.1
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• pp.31-37
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• 2015

Chelating agents 1,4,7-triazacyclononanetriacetic acid (NOTA), 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA) and 30-amino-3,14,25-trihydroxy-3,9,14,20,25-penta-azatriacontane-2,10,13,21,24-pentaone (desferrioxamine, DFO) were labeled with $^{68}Ga$ and tested in vitro properties to check the feasibility of using DFO as a bifunctional chelating agent or renal imaging agent. The chelating agents of concentration $2{\mu}M$ were labeled with $^{68}Ga$ in 0.1 M HCl at pH 1.7-10.3 at room temperature and $80^{\circ}C$ and the optimal pH for labeling each chelating agent was found. And then, the chelating agents were labeled with $^{68}Ga$ in various concentration of chelating agents at optimal pH. The labeled chelating agents were subject to stability test in human serum and to binding studies to human red blood cell (RBC) and plasma protein. The optimal pH's of NOTA, DOTA and DFO for $^{68}Ga$-labeling were 4.4, 3.6 and 5.6, respectively. DFO ($10{\mu}M$) showed high labeling efficiency (>97%) at pH 5.6. All the labeled chelating agents showed high stability in human serum. $^{68}Ga$-DFO showed low RBC binding but significant amount was bound to plasma protein. The results demonstrated that $^{68}Ga$-DFO can be used as a bifunctional chelating agent but not as a renal imaging agent.

• The Journal of Korean Physical Therapy
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• v.14 no.2
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• pp.234-249
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• 2002

This study was performed, using c-fos and Substance P, to investigate the effect of GaAlAs laser on acute pain model induced by wound in lumbar region's spinal level. The test group was divided into control and experimental group. Control group is shamed group(c-fos and substance P expression after non-irradiation by a GaAlAs laser), The experimental group was divided into two subgroups: one is experimental group I (c-fos expression after irradiation by a GaAlAs laser), and the other is experimental group II (substance P expression after irradiation by a GaAlAs laser). The results of this study were as following: 1. The numbers of c-fos immunoreactive neuron in spinal cord was increased markedly 1 day after wound, and decreased gradually from 1 day to 2 days in wound with GaAlAs laser irradiation. 2. The changes of the average percentages of substance P immunoreactive neurons in spinal cord was increased markedly 1 day after wound, and decreased gradually from 1 day to 2 days in wound with GaAlAs laser irradiation. Therefore, decreasing the changes of c-fos and substance P expression after irradiation by a GaAlAs laser indicates and GaAlAs laser have effect on pain control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.433-434
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• 2008

반도체 공정 기술의 진보로 인해 InP/InGaAs로 제작된 애벌랜치 포토다이오드가 고속 광통신 시스템에서 사용되고 있다. 하지만 경계 항복에 의한 접합 부분의 강한 전기장으로 인한 문제와 항복 이득의 저하 문제로 소자 특성의 문제가 발생하고 있다. 이 논문에서는 소자 구조 변화에 따른 고속 InP/InGaAs 애벌랜치 포토다이오드의 특성 변화를 공정/소자 시뮬레이션을 이용하여 분석하였다.

• Journal of Biomedical Engineering Research
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• v.20 no.6
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• pp.539-546
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• 1999

현재 상용화되고 있는 치과용 76.5% Pd-11.2% Cu-7.2% GarP 합금의 왁스모형을 원심주조기로 주조하여, 임상조건의 탈개스 및 세라믹 소성처리를 하였다. 이에따른 각각의 시편에 대해 미세조직의 변화를 주사전자현미경 및 EDS로 관찰하고, 최종적인 투과전자현미경으로 조사하였다. 각 조건의 편석, 결정립계 및 석출물부위를 주사전자현미경과 EDS 고 관찰한 결과, 이원계 Pd-GA합금의 안정상들에 해당하는 정량적인 조성비는, 단지 상대적으로 Ga의 성분비만 높게 감지되었다. 특히, 세라믹소성 처리후 미세조직에서 형성된 석출물에 근접한 기지조직일수록 Ga의 농도가 상대적으로 줄어든 고갈현상을 확인하엿다. 또한 투과전자현미경의 제한시야회절도형 분석결과, 주조 및 탈개스처리 후 미세조직의 편석부위에서는 GA의 가장 큰 강도를 보였고, 또 Ga과 Pd 고용체 사이에 미세한 판상의 석출물에 기인하는 줄무늬를 관찰하였다. 한편, 세라믹소성처리후 미세조직의 석출물은 금속간화합물 Pd2Ga으로 밝혀졌으며, 기지조직은 <100> 방향을 따라 약 25nm의 폭을 가지는 미세한 섬유상 형태의 소위 "tweed 조직'을 형성하였다.성하였다.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.213-217
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• 1997

We have measured photoluminescence (PL) and time-resolved PL in doped-GaAs. As increasing doping concentration, the PL spectra of n-type GaAs shift to higher energies while the PL spectra of p-type GaAs shift to lower energies than the bandgap of the undoped GaAs. The contribution of the Burstein-Moss effect overrules the band-gap narrowing in n-type GaAs, contrary to p-type GaAs. The PL rise time and decay time become shorter as increasing doping concentration. The PL rise and decay time in doped-GaAs depend on the type of majority carriers and their concentrations, which imply that the carrier-carrier interaction plays an important role in the energy relaxation processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.166-166
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• 2010

산업 전반에 걸쳐 중요한 광원인 808 nm 대역의 레이저 다이오드 제작에는 현재 InGaAsP/InGaP/GaAs 및 InGaAlAs/GaAs 양자우물을 이용하여 제작되고 있다. 이는 양자우물과 이를 둘러싸는 장벽물질간의 band-offset이 적어 효율적인 고출력 레이저 다이오드의 제작에 어려움이 있기 때문에 강한 캐리어 구속 효과를 지니는 양자점을 사용하는 것이 고출력 레이저 다이오드를 제작할 수 있는 방법이다. 실험에 사용된 InAlAs 양자점은 Riber사의 compact21 MBE 장치를 사용하여 성장하였으며 GaAs기판을 610도에서 가열하여 표면의 산화층을 제거하고 580도에서 약 100 nm 두께의 GaAs 버퍼층 및 30 nm 두께의 $Al_{0.4}Ga_{0.6}As$층을 성장하였다. GaAs 기판의 온도를 내린 후 migration enhanced epitaxy 방법을 사용하여 InAs 및 AlAs를 번갈아 주입하여 성장하였다. InAlAs 양자점의 성장 중에 InAlAs의 양, 성장 온도, As flux량 및 As 분자 상태 변화 등 다양한 조건을 변화 시켜 샘플을 성장시켰다. 그 결과 기판 온도가 600도이며 As4 flux가 $1\;{\times}\;10^{-6}\;Torr$ 조건하에서 성장한 InAlAs/AlGaAs 양자점이 양질의 808 nm의 파장 대역을 얻을 수 있었다.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.67-71
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• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.