• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.35-40
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• 2015

In this study, an n-ZnO/p-Si heterojunction diode with embedded Ag nanoparticles was fabricated to investigate the possible improvement of light trapping via the surface plasmon resonance effect for solar cell applications. The Ag nanoparticles were fabricated by the physical sputtering method. The acquired current-voltage curves and optical absorption spectra demonstrated that the application of Ag nanoparticles in the n-ZnO/p-Si interface increased the photo current, particularly in specific wavelength regions. The results indicate that the enhancement of the photo current was caused by the surface plasmon resonance effect generated by the Ag nanoparticles. In addition, minority carrier lifetime measurements showed that the recombination losses caused by the Ag nanoparticles were negligible. These results suggest that the embedding of Ag nanoparticles is a powerful method to improve the performance of n-ZnO/p-Si heterojunction solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.231-231
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• 2003

I-III-Ⅵ족 CuInGaSe$_2$(CIGS)계 화합물 태양전지는 1 eV 이상의 직접 천이형 에너지 밴드갭을 가지며, 전기 광학적으로 매우 안정하여 태양전지의 광흡수층으로 매우 이상적이다. CIGS 광흡수층제조를 위하여 용매열법 (solvothermal method)으로 CIGS나노입자를 합성하였다. 용매열법은 진공장비를 사용하던 기존의 방법에 비해 저온, 저압에서 저가로 합성할 수 있다는 장점을 가지고 있다. Copper, indium selenium 및 gallium 분말과 유기용매 ethylenediarnine을 autoclave안에서 반응시켜 CIGS 나노입자를 제조하였다. 280 에서 14시간동안 반응시켜 직경이 30-80 nm인 구형에 가까운 CIGS 나노입자를 얻었다. 이것은 용매열법에 의한 4성분계의 CIGS 나노입자의 최초 합성이다. diehyleneamine을 용매로 사용한 경우에 한하여 구형의 CIS 입자를 합성할 수 있다고 보고되었으나, Cu와 이중 N-chelation이 형성되는 ethylenediamine 용매임에도 불구하고 구형의 CIGS 나노분말이 형성된 것은 solution-liquid-solid (SLS) 기구로 설명할 수 있었다. HRSEM, TEM, XRD. EDS으로 나노분말의 형상 크기 및 조성을 조사하여 chalcopyrite 구조의 CuInGaSe$_2$ 임을 확인하였다.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.582-588
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• 2014

We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.320-324
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• 2011

TOPO/TOP capped CdSe nanoparticles were synthesized via thermal-solvent method. The 540 nm green and 620 nm red emitting CdSe nanoparticles were obtained by controlling the reaction time and temperature. Phosphor conversion white LED was produced combining a 460 nm emitting InGaN LED chip as an excitation source with 540 and 620 nm CdSe nanoparticles as phosphors. The single or double phosphor layer was fabricated by mixing with epoxy, and investigated the effects on the luminous properties of the white LED. The single phosphor layer white LED showed 5.78 lm/W with CIE of (0.36, 0.45) in reddish white, and the double phosphor layer white LED showed 7.28 lm/W with that of (0.32, 0.34) in pure white at 20 mA. When the 400 nm near-UV LED was applied to optical pumping source, the luminous efficiency of white LED was enhanced to 8.76 lm/W.