• 한국결정성장학회지
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• 제13권2호
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• pp.79-82
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• 2003

ArF(193nm) 엑시머 레이저를 이용한 펄스레이저증착법(PLD)에 의해 GaN 소결체를 타겟 재료로 하여 $SiO_2$기판위에 GaN nanoparticles를 합성하였다. PLD 공정 중에는 100Pa, 50Pa, 10Pa및 1 Pa의 Ar gas 압력과 100mJ 및 200mJ의 레이저 에너지를 가하였다. 합성된 GaN nanoparticles는 XRD, SEM, TEM, XPS 및 optical absorption spectra 등에 의해 분석되었다. 합성된 GaN nanoparticles는 대체적으로 20~30nm의 입경을 갖는 균일한 분포를 하고 있었다. 또한, Ar 기체 압력이 낮아짐에 따라 합성된 GaN nanoparticles의 stoichiometry가 향상되고 optical band edge가 blueshift 경향을 나타내었다.

• Current Applied Physics
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• 제18권12호
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.965-971
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• 2001

$\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

• 반도체공학회 논문지
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• 제1권1호
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• pp.9-13
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• 2023

본 연구에서는 SnO₂ 나노입자와 Pd 금속의 이중층으로 구성된 촉매층을 갖는 AlGaN/GaN 이종접합 기반의 상온동작 수소센서를 제작하여 해당 센서의 안정성 개선 연구를 수행하였다. 제작된 센서를 고온 환경이 아닌 상온에서 수소에 노출 및 차단을 반복하며 동작 시켰을 때 시간에 따라 대기전류가 감소하는 불안정한 전류 드리프트 (current drift) 현상이 발생하였지만, 자외선 (UV) 조사를 함께 진행하면서 반복 측정을 하였을 때 해당 불안정성의 가시적인 개선 효과를 이루었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.158-160
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• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• 한국분말재료학회지
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• 제28권2호
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.164-164
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• 2013

Among multicomponent nanostructures, hybrid nanocatalysts consisting of metal nanoparticle-semiconductor junctions offer an interesting platform to study the role of metal-oxide interfaces and hot electron flows in heterogeneous catalysis. In this study, we report that hot carriers generated upon photon absorption significantly impact the catalytic activity of CO oxidation. We found that Pt-CdSe-Pt nanodumbbells exhibited a higher turnover frequency by a factor of two during irradiation by light with energy higher than the bandgap of CdSe, while the turnover rate on bare Pt nanoparticles didn't depend on light irradiation. We also found that Pt nanoparticles deposited on a GaN substrate under light irradiation exhibit changes in catalytic activity of CO oxidation that depends on the type of doping of the GaN. We suppose that hot electrons are generated upon the absorption of photons by the semiconducting nanorods or substrates, whereafter the hot electrons are injected into the Pt nanoparticles, resulting in the change in catalytic activity. We discuss the possible mechanism for how hot carrier flows generated during light irradiation affect the catalytic activity of CO oxidation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).