• 전자공학회논문지 IE
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• 제45권3호
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• pp.1-4
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• 2008

본 연구에서는 비약적으로 발전하고 있는 반도체 소자가 요구하는 새로운 특성을 가진 신소재의 개발에 부응하여, 최근 세계적으로 많은 연구가 되고 있는 spintronics에 사용되는 화합물 자성반도체 박막에 관한 연구를 수행하였다. 본 연구에서 사용되는 GaMnAs 자성반도체 박막은 기존의 III-V족 화합물 반도체 소자에 적용이 쉽고, 그 응용범위가 넓어 앞으로의 전망이 매우 밝은 새로운 화합물 반도체라고 할 수 있다. 그러나 이런 GaMnAs 자성반도체 박막의 경우 현재까지 자성 특성을 나타내는 Curie 온도가 매우 저온에서만 나타나며, 또한 성장 조건에 따라 그 특성이 매우 달라지는 문제점을 가지고 있다. 따라서 본 논문에서는 GaMnAs 자성반도체 박막을 성장시키기 위한 최적조건과 자성특성을 향상시키기 위한 실험을 수행하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.203-203
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• 2009

We report on the epitaxial growth of tetragonal $DO_{22}$-type Mn3Ga films on GaSb (001) using molecular beam epitaxy and the related structural and magnetic properties. The as-studied $Mn_3Ga$ film was found to exhibit relatively small coercivity around 400 Oe, which differs greatly from the hard magnetic properties of $Mn_3Ga$ bulk specimen or films that are normally reported. This difference was probably attributed to the effects of the GaSb (001) substrate that forced the $Mn_3Ga$ film to be two-dimensionlly stabilized in the (114) orientation and thus led to the modified intrinsic properties of $Mn_3Ga$ films. The growth orientation of the Mn3Ga (114)//GaSb (001) also caused the easy magnetocrystalline direction located in the film plane due to the dominant shape anisotropy in the thin films.

• 한국진공학회지
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• 제5권1호
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• pp.6-13
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• 1996

The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

• 한국결정성장학회지
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• 제11권3호
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• pp.96-101
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• 2001

본 연구에서는 열벽 적층 성장법으로 GaAs(100) 기판 위에 $Zn_{1-x}Mn_{x}Te$ 에피층을 성장하여 그 특성을 조사하였다. $Zn_{1-x}Mn_{x}Te$ 에피층의 Mn 조성비는 x = 0.97까지 얻을 수 있었으며 성장된 시료의 결정구조는 징크브랜드이었다. 성장된 면은 GaAs (100) 기판과 동일한 방향으로 성장되었다. 성장시 기판 온도가 $350^{\circ}C$에서 $400^{\circ}C$로 증가함에 따라 Mn 조성비 x는 0.02에서 0.23으로 증가하였다. $Zn_{1-x}Mn_{x}Te$ 에피층의 격자상수는 Mn 조성비 x가 증가할수록 선형으로 증가하였고 띠 간격 에너지는 x에 대하여 비선형으로 증가하였다.

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1320-1325
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• 1998

ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1040-1046
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• 1996

Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.262-267
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• 1997

In order to improve the brightness and chromaticity of green emitting low voltage phosphor for FED, we examine PL, PLE and CL emission characteristics of ZnGa$_{2}$O$_{4}$:Mn,O prepared in Ar and vacuum. ZnGa$_{2}$O$_{4}$:Mn,O sintered in vacuum shows about 16 times as bright as the one fabricated in Ar and excellent chromaticity. In PL emission spectra of ZnGa$_{2}$O$_{4}$:Mn,O at low temperature of 9 K, two peaks are observed at 504 nm and 513 nm. At room temperature, the two peaks are superimposed due to the lattice thermal vibrational energy, and only one peak is observed at 509 nm. From PLE measurements, it is believed that the energy levels of the host lattice and Mn ions are coexisted. The energy transfer from the host lattice to the emission center of Mn$^{2+}$ ions occurs.s.

• 한국진공학회지
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• 제12권S1호
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• pp.104-106
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• 2003

In this study, the electronic structures and physical properties of Ni$_2$MnGa alloy films and their dependence on the order-disorder structural transitions were investigated. The results show that the ordered films behave nearly the same as the bulk $Ni_2$MnGa alloy, including the martensitic transformation at 200 K. Unexpectedly, the disordering in $Ni_2$MnGa alloy films does not lead to any appreciable magnetic ordering down to 4 K. An annealing of the disordered films restores the ordered structure with an almost full recovery of the magnetic and the transport properties of the ordered $Ni_2$MnGa alloy films. A possible explanation of the disappearance of magnetic moment in the disordered film is given by using the ab initio first-principles electronic-structure calculations.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.166-167
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• 2004

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.22-23
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• 2005