• Title/Summary/Keyword: GaJi

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Effect of $GA_3$ on Germination of Perilla frutescens var. acuta KUDO under High Temperature (고온에서 $GA_3$처리가 자소의 발아에 미치는 영향)

  • Lee, Joong-Ho;Kwon, Ji-Wung;Lee, Seung-Yeob
    • Korean Journal of Medicinal Crop Science
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    • v.9 no.3
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    • pp.198-204
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    • 2001
  • $GA_3$ treatments for seeds of Perilla frutescens var. acuta Kudo were evaluated as a means of improving the percent germination, and the interactions of $GA_3$, mulching, and sowing depth on seedling emergence were investigated in late sowing. Percentage germination of seeds treated with different concentration of $GA_3$ was the most effective in 100 ppm treatment for 24 hours. The germinability according to the seeds soaking time was not significantly different over 12 hours in 100 ppm $GA_3$. At high temperature $(25^{\circ}C\;and\;30^{\circ}C)$, percentage germination was significantly increased in 100 ppm ${GA_3}$ treatment. In late sowing (1th or 15th May), seedling emergence was significantly higher in 100 ppm $GA_3$ treatment than nontreatment, and that was significantly increased when the seeds treated with 100 ppm $GA_3$ were mulched with 10 mm rice hull after molding with 5 mm soil depth.

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Terahertz Generation and Detection Characteristics of InGaAs

  • Park, Dong-U;Han, Im-Sik;Kim, Chang-Su;No, Sam-Gyu;Ji, Yeong-Bin;Jeon, Tae-In;Lee, Gi-Ju;Kim, Jin-Su;Kim, Jong-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.161-161
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    • 2012
  • 본 연구에서는 InGaAs을 이용한 테라헤르쯔(THz) 발생과 검출 특성을 GaAs에 의한 특성과 비교, 조사하였다. 고온성장(HTG, $530^{\circ}C$) InGaAs를 이용하여 photo-Dember (pD) 효과(표면방출)에 의한 THz 발생 특성을 조사하였으며, THz 검출 특성에는 저온성장(LTG, $530^{\circ}C$) InGaAs: Be을 이용하였다. HTG-InGaAs 기판 위에 패턴한 금속전극 (Ti/Au, ${\sim}500{\times}500{\mu}m$)의 가장자리에 Ti: Sapphire fs 펄스 레이저(30 ps/90 MHz)를 조사하여 LTG-GaAs 수신기(Rx)로 THz를 검출, 전류신호(a)와 Fourier transform (FT) 주파수 스펙트럼(b)을 얻었다. HTG-InGaAs에서 얻은 파형은 SI-GaAs에서와 거의 비슷한 모양이었으나, 주파수 범위(0.5~2 THz)는 SI-GaAs의 1~3 THz 보다 좁고 FT 스펙트럼의 세기는 약 1/8 정도로 낮았다. LTG-InGaAs 수신기 (Rx)의 안테나는 쌍극자 ($5/20{\mu}m$) 형태를 가지고 있으며, SI-GaAs Tx로 발생시킨 광원을 사용하여 THz 영역의 검출 특성을 조사하였다. HTG-InGaAs Tx 및 LTG-InGaAs Rx의 이득은 각각 약 $5{\times}10^{-8}$ A/W과 $2.5{\times}10^{-8}$ A/W인 것으로 분석되었다.

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Effect of Oxygen Pressure on the properties of Ga-doped ZnO Thin Films Prepared by Pulsed Laser Deposition at Low Temperature (PLD로 저온 증착한 Ga-doped ZnO 박막의 산소 분압에 따른 영향)

  • Moon, Sung-Joon;Kim, Ji-Hong;Roh, Ji-Hyung;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.297-297
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    • 2010
  • Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

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Effect of substrate on growth of Ga-doped ZnO thin films (Ga 도핑된 ZnO 박막의 기판에 따른 성장 특성)

  • Kim, Ji-Hong;Roh, Ji-Hyoung;Ryu, Kyoung-Jin;Moon, Sung-Joon;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.296-296
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    • 2010
  • In this work, we report the effect of substrate on the growth of Ga-doped ZnO (GZO) thin films. GZO thin films were deposited on various substrates by using pulsed laser deposition (PLD). The structural properties, surface morphologies, and electrical properties were investigated. From the results of HRXRD, c-plane (0002) oriented growth of GZO films was confirmed on $Al_2O_3$ (0001). On the other hand, the GZO films on LAO (100) substrates were grown along the a-axis. The obvious differences on the electrical properties of each film were also obtained.

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Effects of antimony addition on growth of InGaN nano-structures by mixed-source HVPE (혼합소스 HVPE 방법에 의한 InGaN 나노구조의 성장에 있어서 Sb 첨가의 영향)

  • Ok, Jin-Eun;Jo, Dong-Wan;Jeon, Hun-Soo;Lee, Ah-Reum;Lee, Gang-Suok;Cho, Young-Ji;Kim, Kyung-Hwa;Chang, Ji-Ho;Ahn, Hyung-Soo;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.3
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    • pp.113-116
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    • 2010
  • We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nano-structures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2% in both cases of with or without the addition of Sb in the InxGal-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nano-structures of which c-axes are aligned parallel to the substrates as an active layer.

High-Speed, High-Reliability Planar-Structure InP/InGaAs Avalanche Photodiodes for 10Gb/s Optical Receivers with Recess Etching (수광영역의 식각을 통한 단일확산 공정의 고속 평판형 InP/InGaAs 10Gb/s 광 검출기의 신뢰성)

  • Jung, Ji-Houn;Kwon, Yong-Hwan;Hyun, Kyung-Sook;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1022-1025
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    • 2002
  • This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

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A Delphi Study For Treatment Standardization of Coldness in hands and Feet (수족냉증 치료 표준화를 위한 델파이 연구)

  • Sun, Seung-Ho;Go, Ho-Yeon;Ko, Seungwoo;Cho, Yoon-Young;Shin, Ji-Hye;Kim, Tae-Hoon;Choi, Dong-Jun;Lee, Jin-Moo;Jang, Jun-Bok;Jung, Ki-Yong;Song, Yun-Kyung;Go, Seong-Gyu;Choi, You-Kyung;Lim, Eun-Mee;Park, Jong-Hyeong;Jeon, Chan-Yong
    • Journal of Society of Preventive Korean Medicine
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    • v.19 no.3
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    • pp.131-140
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    • 2015
  • Objective : The purpose of this study is to figure out the treatment of coldness in hands and Feet by using Delphi survey. Method : This study was approved by institutional review boards at Kyung Hee University. Self recording type delphi survey were sent by e-mail to 55 Korean medicine specialists (19 gynecologist, 36 internal medical doctors) who treat coldness in hands and Feet. And replies were analyzed. As this study is cross sectional study, simple descriptive analysis was applied. Results & Conclusion : Herbal medicine, acupuncture and moxibustion were mainly applied and extract (granule), pharmacopuncture, bee venom pharmacopuncture and cupping therapy were also added case by case. Treatment was done twice a weak for 4 months. Cupping therapy was done at GB21 and SI11. Bee venom pharmacopuncture and Kidney yang deficiency pharmacopuncture were applied at ST36, GB21, CV4 and LR3. As extract (granule) Ijungtang, Dangguisayeokgaosuyusaenggangtang and Dangguisayeoktang were mainly used and as herbal medicine formula Palmijihwangwon, Bojungikgitang, Ijungtang, Danggwisayeok-gaosuyusaenggangtang and Danggwisayeoktang were mainly prescribed. Comprehensive treatment of acupuncture, moxibustion and herbal medicine was considered to have more effective and more rapid result than single treatment of herbal medicine have.

A Study on the Bul-woo-heon-ga by Jeong Geuk-in (정극인의 <불우헌가>에 나타난 시조성 연구)

  • 김성기
    • Sijohaknonchong
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    • v.19 no.1
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    • pp.155-177
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    • 2003
  • Jeong Geuk-in was a poet of the early Joseon period. He lived for 45 years before Hangeul was published and 35 years afterwards. So, he wrote poetry both in Chinese and Korean. He was a creative writer who wrote Korean poems and songs. There were only a few works written in Korean including and before him. His Korean poems are , and . He created Korean poems and songs by unifying three literary forms of Sijo, Gyeong-gi-che-ga and Gasa. This study was intended to examine written in Korean. For the study, the form of the Bul-woo-heon-ga was analyzed and it was considered as Saseolsijo (a form of sijo with no restrictions on the length of the first two verses) for genre classification. However, it is generally thought that the Saseolsijo appeared in the seventeenth century. Therefore, this study is to explain the reason why Bul-woo-heon-ga is included in Saseolsijo. Another problem is that the writer of Bul-woo-heon-ga is not Jeong Geul-in, because of the fact that the speaker who appears in Bul-woo-heon-ga admired Jeong Geuk-in. In general, people do not admire themselves. As Jeong Geuk-in is a subject to be admired in the book, it is thought that the writer of the book is considered as one of his pupils or friends.

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