• 자원리싸이클링
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• 제4권3호
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• pp.10-18
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• 1995

GaAs wafer의 Scrap은 고품위이고 반도체 제조공정중의 여러 단계에서 발생하는 지속적인 자원이므로, 이로부터 Ga, As의 분리 회수에 관한 기술개발은 자원의 Recycling 측면에서 대단히 중요한 의미를 지니고 있다. 특히 유독성 물질인 As에 의한 환경오염 방지의 측면에서도 GaAs Scrap으로부터 Ga, As의 분리 회수는 필연적이라 할 수 있다. 본 연구에서는 진공 분위기하(2~2.5$\times$10\ulcorner mmHg)에서 Ga과 As 상호간의 증기압 차를 이용한 건식법에 초점을 두어 주로 thermo-electrobalance를 이용, GaAs 분말의 증발거동을 연구 검토하여 GaAs Scrap으로부터 Ga, As의 분리 회수를 위한 기초자료로서 활용하고자 하였다. GaAs Scrap분말은 약 $795^{\circ}C$까지는 거의 중량변화가 없으나, 이 온도 이상에서는 증발에 따른 중량감소가 일어나 $965^{\circ}C$ 부근에서 급격한 중량감소를 보였다. 특히 $1,000^{\circ}C$ 이하의 저온일 경우에는 GaAs 화합물로부터 Ga과 As가 분해하지 못하고 단지 GaAs의 화합물형태로서 증발하나, $1,000^{\circ}C$ 이상의 온도에서는 Ga, As 간의 공유결합이 끊어져 각각 분해됨으로써 양자간의 증기압 차에 의하여 Ga을 분리 회수할 수 있다.

• 자원리싸이클링
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• 제14권2호
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• pp.28-32
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• 2005

화합물반도체 제조 공정에서 발생하는 GaAs scrap으로부터 열분해법을 이용하여 갈륨을 회수하기 위한 기초 실험으로 200 g/batch 규모의 진공 열분해 실험을 수행하였고, 이 결과를 이용하여 30 kg/batch 용량의 Packed Tower가 부착된 열분해 장치를 제작하였다. 기초실험 결과 GaAs의 열분해속도는 온도가 높아짐에 따라 커지지만, 특히 1000$^{\circ}C 이상에서는 갈륨의 증기압 또는 증가하므로 갈륨의 회수율이 낮아지는 것을 알 수 있었다. 노 내 압력이 2~2.5${\times}10^{-2} mmHg일 때 1000~1050$^{\circ}C에서 가장 좋은 결과를 보였고, 이때 89% 정도의 갈륨 회수율을 나타내었다. GaAs의 열분해 시 비소의 분압은 온도가 높아짐에 따라 증가하고 융점인 1237$^{\circ}C를 전환점으로 온도는 낮아져도 증기압은 높은 이력현상(Hysteresis)을 보이는데, 이와 같은 특성을 이용하여 산업 생산에 적용한 열분해장치 제작에서는 반응기 위에 충진탑을 설치하였다. 그 결과, 열분해 반응기 내의 온도가 융점 이상의 고온에서도 99% 정도의 높은 회수율을 얻을 수 있었다.

• 한국환경보건학회지
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• 제39권3호
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• pp.248-255
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• 2013

Objectives: The purpose of this paper is to define the level of recycling standards and its process in paper scrap. As pollution is increased by improperly treated paper scrap, the government has recently strengthened the management of the paper scrap. Methods: In this study, the current status of paper scrap recycling was investigated through a 2012 field survey, and the classification and recycling standards for paper scrap in developed countries and institutions were also investigated through a literature review in order to introduce optimal recycling standards. Results: As a result, the contents of contaminants were identified as the most important recycling standard, and the contents of contaminants in paper scrap was measured at less than 1.0% at most companies. The recycling standard for paper scrap was determined to be below 3% contaminants in the case of paper and 5% in the case of board. In this study, recycling stage was determined by considering regulations on resources and practices in the field. Conclusions: The recycling standard for paper scrap was determined to be below 3% and 5% contaminants for paper and board, respectively.

• 한국분말재료학회지
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• 제22권4호
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• pp.278-282
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• 2015

The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from $200^{\circ}C$ to $1100^{\circ}C$ and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to $Ga_2O_3$ structure when annealed above $900^{\circ}C$ for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.

• 한국분말재료학회지
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• 제21권3호
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• pp.202-206
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• 2014

Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery of pure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significant amounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectively to maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metallic composition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were tested to comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. The most effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phase transformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequently high purity Ga and In can be recovered by series of hydro processes.