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http://dx.doi.org/10.4150/KPMI.2014.21.3.202

Leaching behavior of Ga and In from MOCVD dust  

Park, Kyung-Soo (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Swain, Basudev (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Kang, Lee Seung (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Lee, Chan Gi (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Hong, Hyun Seon (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Shim, Jong-Gil (Enco co. Ltd.)
Park, Jeung-Jin (Enco co. Ltd.)
Publication Information
Journal of Powder Materials / v.21, no.3, 2014 , pp. 202-206 More about this Journal
Abstract
Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery of pure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significant amounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectively to maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metallic composition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were tested to comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. The most effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phase transformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequently high purity Ga and In can be recovered by series of hydro processes.
Keywords
MOCVD dust; Leaching; Heat treatment; Recovery; Ga;
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