• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.2 no.2 s.3
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• pp.97-101
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• 2003

A MMIC (monolithic microwave integrated circuit) mixer chip using the Schottky diode of an InGahs/CaAs p-HEMT process has been developed for the receiver down converter of Ku-band. A different approach to the MMIC mixer structure is applied for reducing the chip size by the exchange of ports between If and LO. This MMIC covers with RF (14.0 - 14.5 GHz) and If (12.252 - 12.752 GHz). According to the on-wafer measurement, the miniature (3.3X3.0 m) MMIC mixer demonstrates conversion loss below 9.8 dB, RF-to-IF isolation above 23 dB, LO-to-IF isolation above 38 dB, respectively.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.2
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• pp.325-331
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• 2010

In this study, highly miniaturized short-wavelength meander line employing eriodically patterned ground structure (PPGS) was developed for application to miniaturized on-chip passive component on GaAs MMIC (monolithic microwave integrated circuit). The meander line employing PPGS showed shorter wavelength and slow-wave characteristic compared with conventional meander line. The wavelength of the meander line employing PPGS structure was 17 % of the conventional meander line on GaAs MMIC. Due to its slow-wave structure, the meander line employing PPGS exhibited large propagation constant than conventional meander line, which resulted in larger phase shift and shunt inductance value. Above results indicate that the meander line employing PPGS is a promising candidate for application to a development of miniaturized on-chip RF components as well as inductor with a high inductance value on GaAs MMIC.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.227-231
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• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.342-345
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• 2014

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.99-104
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• 2013

In this paper, we developed a fully integrated downconverter MMIC (monolithic microwave integrated circuit) including Lange coupler and output active balun for millimeter wave applications. Concretely, ${\lambda}$/4 transmission line was added to Lange coupler for size reduction of RF/LO input, and mixed RF/LO signals were applied to gate of the FET of mixer. Active balun was used at output port for a coupling of out-of-phase IF output signals. According to measured results, the proposed downconverter MMIC showed good RF performances. For example, the downconverter MMIC showed an LO leakage power of -25 dBc at IF output port, and a RF-LO isolation of 18 dB. Therefore, off-chip components such as LO rejection filters were not required for a normal operation of the proposed downconverter MMIC. The proposed downconverter MMIC showed a conversion gain of 10.3 dB at RF frequency of 63 GHz. The size of the downconverter MMIC including all active and passive components was $2.2{\times}1.4mm^2$.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.6
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• pp.840-845
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• 2010

In this paper, short-wavelength transmission line employing periodically arrayed capacitive devices (PACD) structures were developed for application to a development of miniaturized on-chip passive components on GaAs monolithic microwave integrated circuit (MMIC). The transmission line employing PACD structure showed a wavelength much shorter than conventional microstrip line. Concretely, the wavelength of the transmission line employing PACD structure was 8 % of the conventional microstrip line on GaAs substrate at 5GHz. And It was 38% of the microstrip line employing PPGM at 5GHz. It was recognized that the basic characteristics of the transmission line employing PACD structure were investigated for application to the miniaturized passive on-chip components.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1054-1057
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) amplifier for WLAN are presented using 0.2$\square$ AIGaAs/lnGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). In each stage of the MMIC, a negative feedback is used for both broadband and good stability. The measurement results are achieved as an input return loss under -4dB, an output return loss under -10dB, a gain of 14dB, and a PldB of 17dBm at Q-band(36～44GHz). These results closely match with design results. The chip size is 2.8${\times}$1.3mm$^2$. This MMIC amplifier will be used as the unit cell to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.506-514
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• 1998

The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

• ETRI Journal
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• v.35 no.3
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.