• The korean journal of orthodontics
• /
• v.51 no.5
• /
• pp.313-320
• /
• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

• The Journal of Korean Physical Therapy
• /
• v.15 no.3
• /
• pp.239-250
• /
• 2003

This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

• The Journal of Korean Physical Therapy
• /
• v.14 no.2
• /
• pp.16-25
• /
• 2002

Low energy laser irradiation(LELI) therapy in physical therapy is widespread but the mechanisms are not fully understood. The purpose of the present study was to examine the epidermal growth factor(EGF)'s expression within lumbar spinal cord which corresponding with crushed extensor digitorum longus(EDL) of rats after low-power laser irradiation applied. After a crushed injury on the right EDL, low-power laser irradiation was applied by using 2000mW, 2000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The laser treatment was performed with 10 minutes daily for 3days. After EDL crush injury, EGF immunoreactive positive neurons in experimental group were progressively decreased from the first to third days. Especially 1 day subgroup is highly expressed in dorsal horn(Lamina I, II, III) and around of central cannal of spinal cord(Lamina VII). Control group was only expressed slightly at 3 days. This study suggests that LELI stimulate that release and migration of EGF in spinal cord, which distict to wound site, therfore promote wound healing of EDL crush injury.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.415-416
• /
• 2008

The finite element model was used to simulate the temperature distribution of a arrayed vertical-cavity surface-emitting laser (VCSEL). In this work, the dimension of AlGaAs/GaAs based VCSEL array was $50{\mu}m$ active diameter and $250{\mu}m$ pitch, and AuSn solder of 80wt%Au-20wt%Sn was included to flip-chip bond. The results of the thermal simulation will be applied to predict the thermal cross-talk in high speed parallel optical interconnects.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.423-423
• /
• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Journal of Oral Medicine and Pain
• /
• v.17 no.2
• /
• pp.129-149
• /
• 1992

In order to verify the acceleration effect of low level laser (LLL) on oral mucosal wound healing process at cell biological level, the author studied growth pattern and ultrastructure in human gingival fibroblasts flashed by GaAlAs LLL-830 nm, 15mW for 10 minutes/flash one to three times at interval of 3-4 days through the evaluation of cell growth rate, protein conent/cell, DNA content/cell and ultrastructural changes for 14 days. The results were as follows : 1. The growth rate in gingival fibloblasts treated by LLL showed 4 orderly stages-decreasing stage after LLL treatment, acute increasing stage 3 days after LLL treatment, restring stage and recovering stage. 2. The effect of multiple flashes on LLL at interval of 3 days more or less was not proportional to times of flash on acceleration of growth in gingival fibroblasts. 3. The total protein content per gingival fibroblast was not significantly changed by LLL treatment in comparison with control group. But some kinds of protein which might be cell growth promoting factors were decreased immediately after LLL treatment, thereafter were acutely increased in cellular protein profile. 4. In ultrastructural changes of gingival fibroblasts treated by LLL, more prominent rough endoplasmic reticulum, mitochondrial hyperplasia/hypertrophy and increased extracellular fibrillar matrix were observed in comparison with control group under same experimental period.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
• /
• v.26 no.5
• /
• pp.481-489
• /
• 2000

This research was focused on overall examination of tissue alteration, wound healing promotion. After the hair on the dorsal surface was shaved, $5{\times}5mm$ oval skin defect was formed. Experimental wounds of right side were irradiated on every day for 90 second with Ga-Al-As semi-conductor laser. Left side wounds served as control group. The rats were sacrificed on the 1st, 3rd, 5th, 7th, 14th, 21th day. For light microscopically, parafin section were stained with H&E, MT. The outcomes were as follows : 1. On 1st day, experimental and control group were seen acute inflammatory cell infiltration, edema. 2. On the 3rd days, both groups were seen crust development, collagen, blood vessel proliferation. 3. On the 5th days, experimental group were reduced edema and inflammatory cell infiltration than control group. 4. On the 7th days, both groups were observed edema, inflammatory cell infiltration disappearance and keratinocytes motility from wound defect. 5. On the 14th days, experimental group appeared collagen, blood vessel proliferation and hair follicle than control group. 6. On the 21th days, both groups were seen normal status re-epithelization. According to the above results, The wound-healing stimulated by laser radiation involves an increased rate of epithelial growth. LLLT was confirmed that it has fibroblast, blood vessel proliferation, influence initial wound healing process.

• Korean Journal of Optics and Photonics
• /
• v.24 no.5
• /
• pp.224-230
• /
• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.

• Journal of the Optical Society of Korea
• /
• v.16 no.3
• /
• pp.313-317
• /
• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Journal of the Korean Chemical Society
• /
• v.38 no.1
• /
• pp.34-40
• /
• 1994

First observation of uranium using a diode laser was published recently. The experiment was performed by the optogalvanic spectroscopy using diode lasers. A laser source causes the current change in a hollow cathode discharge lamp when metal atoms in plasma absorb the diode laser light. The optogalvanic signal is collected by detecting the current change. This work is the extended investigation of our previous research, the uranium detection using a diode laser. New electronic transitions of uranium and thorium in 775∼850 nm were investigated using diode lasers. In addition, the Rb(Ⅰ) optogalvanic spectra at 780.02 nm and 794.76 nm were studied. The Rb(Ⅰ) spectrum at 780.02 nm showed the isotopic features and hyperfine splittings. This work provides a key idea that the diode lasers are useful in the specrochemical analysis of the radioactive actinides that have a rich spectrum with transitions which can be easily reached with AlGaAs diode lasers. Also, this study shows that the diode lasers can be an important tool to find the spectroscopic parameters of actinides and rare earth elements which have not known.