• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• The Journal of Korean Physical Therapy
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• v.15 no.3
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• pp.239-250
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• 2003

This study was performed to investigate the effect of low power laser irradiation on Substance P(SP) expression in the burned skin of the rats. Burns of about 3cm in diameter were created with $75^{\cric}C$ water on the back of the rats, and the lesion of experimental group were irradiated on days 1, 2, 3 and 4 postwounding. Control leasions were not irradiated. After burns, low power laser irradiation was applied by using 1000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The expression of evaluated Substance P(SP) immunohistochemistry on rabbit anti-SP The results of this study wereas follows 1. The Substance P was expressed in the lamina I and II of dorsal horn of spinal cord. In expression of SP, the lesion of control group made SP to more induce significantly than experimental leasions. 2. SP immunoreactivity in burned leasion of spinal cord were decreased markedly 4 days after burns, and decreased gradually from 1 day to 2 days in burns which is laser irradiation These data suggest that low power laser have a pain release effect in the burned skin of the rats.

• The Journal of Korean Physical Therapy
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• v.14 no.2
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• pp.16-25
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• 2002

Low energy laser irradiation(LELI) therapy in physical therapy is widespread but the mechanisms are not fully understood. The purpose of the present study was to examine the epidermal growth factor(EGF)'s expression within lumbar spinal cord which corresponding with crushed extensor digitorum longus(EDL) of rats after low-power laser irradiation applied. After a crushed injury on the right EDL, low-power laser irradiation was applied by using 2000mW, 2000Hz, 830nm GaAlAs(Gallium-aluminum-arsenide) semiconductor diode laser. The laser treatment was performed with 10 minutes daily for 3days. After EDL crush injury, EGF immunoreactive positive neurons in experimental group were progressively decreased from the first to third days. Especially 1 day subgroup is highly expressed in dorsal horn(Lamina I, II, III) and around of central cannal of spinal cord(Lamina VII). Control group was only expressed slightly at 3 days. This study suggests that LELI stimulate that release and migration of EGF in spinal cord, which distict to wound site, therfore promote wound healing of EDL crush injury.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.172-175
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• 2016

Time of Flight(ToF) LiDAR(Light Detection And Ranging) technology has been used for distance measurement and object detection by measuring ToF time information. This technology has been evolved into higher precision measurement field such like autonomous driving car and terrain analysis since the retrieval of exact ToF time information is of prime importance. In this paper, as a accuracy indicator of the ToF time information, timing jitter was measured and analyzed through Single-Shot LiDAR system(SSLs) mainly consisting of 1.5um wavelength MOPA LASER, InGaAs Avalanche Photodiode(APD) at 31M free space environment. Additionally, we applied spline interpolation and multiple-shot averaging method on measured data through SSLs to improve ToF timing information.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.26 no.5
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• pp.481-489
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• 2000

This research was focused on overall examination of tissue alteration, wound healing promotion. After the hair on the dorsal surface was shaved, $5{\times}5mm$ oval skin defect was formed. Experimental wounds of right side were irradiated on every day for 90 second with Ga-Al-As semi-conductor laser. Left side wounds served as control group. The rats were sacrificed on the 1st, 3rd, 5th, 7th, 14th, 21th day. For light microscopically, parafin section were stained with H&E, MT. The outcomes were as follows : 1. On 1st day, experimental and control group were seen acute inflammatory cell infiltration, edema. 2. On the 3rd days, both groups were seen crust development, collagen, blood vessel proliferation. 3. On the 5th days, experimental group were reduced edema and inflammatory cell infiltration than control group. 4. On the 7th days, both groups were observed edema, inflammatory cell infiltration disappearance and keratinocytes motility from wound defect. 5. On the 14th days, experimental group appeared collagen, blood vessel proliferation and hair follicle than control group. 6. On the 21th days, both groups were seen normal status re-epithelization. According to the above results, The wound-healing stimulated by laser radiation involves an increased rate of epithelial growth. LLLT was confirmed that it has fibroblast, blood vessel proliferation, influence initial wound healing process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.4
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• pp.28-39
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• 1993

In the international BISDN used satellite, the laser that has large BW has to be used as a carrier for transmitting a lot of visual, vocal, and data information. Interoptical satellite communication has now developed in theoretical and practical aspects. But the optical communication, between satellite and earth station, is hindered by atmospheric absorption, scattering, and turbulence. In this paper, it was supposed that 1Gbps information was transmitted by binary FSK and 50mW AlGaAs semiconductor laser was used as a optical source in the satellite communication link between geosynchronous orbit satellite and earth station. We analyzed the BER and the entire diameter of the noncoherently combined optical heterodyne receiver as el evation angle, and determined the number of the optical heterodyne rece ivers, which is necessary for the BER of the receiver to be less than 10$^{-9}$ by computer simulation under the clear weather condition. It is shown that the BER and the number of the optical heterodyne receivers decrease as the elevation angle increases. In the region used the same number of the optical heterodyne receivers, it is shown that the entire diameter of the receiver increases but the BER decreases as the elevation angle increases.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.395-402
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• 1997

We have obtained the optimum thickness of anti-reflection(AR) coating on one of facets of a $\1.55mu\textrm{m}$ InGaAsP MQW FP semiconductor laser by in-site monitoring of the light emitted from the rear facet during the film deposition on the fore facet. The optimum thickness of $SiO_x$ thin film whose refractive index is 1.85 was found to be 188 nm. The reflectivity of the coated facet was calculated by the threshold current ratio of before and after AR coating, which was obtained from exprimental data, and it was about 2$\times$ $10^{-4}$. The results show that the output power is increased by 87% at bias current 60 mA, the slope efficiency is increased by 3.4 times, and the threshold current is increased by 2.64 times. By in-situ depositing of the $Si/SiO_2$ thin film HR coating on the rear facet, the output power was increased by 160% than before the AR and HR coatings, the slope efficiency was increased by 3.8 times, the threshold current was increased by 1.07 times, which is similar to the value of before AR coating. Due to the AR and HR coatings the output light power characteristics were enhanced.