• Electrical & Electronic Materials
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• v.9 no.3
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• pp.240-245
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• 1996

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.169-171
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• 1989

The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of Korean Physical Therapy Science
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• v.9 no.2
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• pp.99-109
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• 2002

We designed the experiments to elucidate the anti-inflammatory effect of low power laser stimulation on acupoint or non-acupoint using arthrogenic solution induced poly arthritis animal model. In order to achieve the experimental purpose, change in body weight paw edema, pathological changes in inflammed pint and the serum interlukin-6 level were measured after arthritis induction in acupoint later stimulated group, non acupoint laser stimulated group and non treated control animal. The results were summerized as follows: 1. The consistent increase in body weight was observed in the normal animal during whole experimental period, while the induction of arthritis significantly suppressed increase in body weight from the 15 day after arthritis induction. Especially, non treated animal group showed more suppressive effect on increase in body weight as compared to that of low power laser stimulated groups (P<0.05). 2. Low power laser stimulation on acupoint (Zusanli) significantly inhibited edema in the left side paw from the 12th day after arthritis induction as compared to that of non treated animals. This suppressive effect on paw edema was maintained until the end of experiment. 3. Laser treatment on acupoint dramatically suppressed the radiological change (i.e. new bone proliferation and soft tissue swelling) caused by arthritis as compared to that of non treated group animals. 4. Low power laser treatment reduced the increase in serum interlukin-6 caused by arthritis induction to levels observed in the normal animals. In conclusion, the results of the present study demonstrated that low power laser stimulation on acupoint has potent anti-inflammatory effect on arthritis. Thus it is recommended that low power laser be used for long term treatment of arthritis induced inflammation. However, further study is necessary to clarify the possible side effect of laser treatment depending upon intensity and duration of stimulation.

• International Journal of Contents
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• v.7 no.2
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• pp.59-63
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• 2011

The aim of our study was to evaluate the immediate effects of an 830-nm Aluminium gallium arsenide (GaAlAs) laser, by examining the changes, in pressure-pain threshold (PPT) and tenderness at 3 kg of the myofascial trigger point (MTrP) of the upper trapezius muscle in visual display terminal (VDT) workers in comparison with placebo treatment. Thirty VDT workers (13 males, 17 females) with complaints of upper trapezius muscle were recruited. All participants were given either active GaAlAs laser (830 nm wavelength, 450 mW, 9 J at point) or placebo GaAlAs laser, according to the double-blinded and placebo-controlled trial. Both active and placebo low-level laser therapy (LLLT) treatments showed no significant effect on PPT and tenderness at 3 kg. These results suggest that a higher dosage may be necessary to produce immediate effects when applying LLLT to the MTrP of relatively large muscles such as the upper trapezius muscle.

• Journal of Oral Medicine and Pain
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• v.36 no.4
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• pp.215-224
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• 2011

The aim of the study was to investigate the effects of 904 nm GaAs laser irradiation for patients with hypersensitive teeth and to find the possibility of clinical use of this Low Level Laser Therapy (LLLT) for the control of hypersensitive teeth. Eleven patients visited Dept. of Oral Medicine, Dankook University participated in this study. Each patient contributed at least two or more contralateral pairs of hypersensitive teeth with exposed dentine at cervical surfaces. Total number of teeth used from subjects participated in this study was 50: 25 experimental and control teeth respectively. All participants were treated with 904 nm GaAs diode laser every week during 4 weeks. Tactile and cold (ice stick) tests were carried out before LLLT every week during 4 weeks and 1 week later after the last LLLT by measuring visual analogue scale (VAS) of patients and by measuring a score of electrical pulp tester (EPT) simultaneously. The VAS score in tactile test decreased significantly with time, but there was not statistically difference between those of groups. The score of EPT in the experimental group was significantly higher than that of control group, although there was no change with time. In cold test, there was significant difference between two groups and cold sensitivity of the experimental group significantly decreased with time after every LLL irradiation, compared with that of control group. Based on the results, it is suggested that the 904 nm GaAs laser irradiation could be positively used as an effective, reversible method in treating cervical dentine hypersensitivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1242-1247
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• 2003

In order to passivate the GaAs surface, silicon-nitride films were fabricated by using laser CVD method. SiH$_4$ and NH$_3$ were used to obtain SiN films in the range of 100∼300$^{\circ}C$ on p-type (100) GaAs substrate. To determine interface characteristics of the metal-insulator-GaAs structure, electrical measurements were performed such as C-V curves and deep level transient spectroscopy (DLTS). The results show that the hysteresis was reduced and interface trap density was lowered to 1,012 ∼ 1,013 at 100 ∼ 200$^{\circ}C$. According to the study of surface leakage current, the passivated CaAs has less leakage current compared to non-passivated substrate.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.67-67
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• 1997

• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.