• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.177-180
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• 1999

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24~28㎓. The amplifier has a small signal gain of 18.6㏈ at 24.5㎓ and 16.7㏈ at 27.1㎓. It achieved output powers of 19.8㏈m with PAE of 19.8% at 24.5㎓ and 18.8㏈m at 27.1㎓.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.138-140
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• 2005

• Journal of the Korea Safety Management & Science
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• v.22 no.4
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• pp.65-74
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• 2020

Many of companies have made significant improvements for globalization and competitive business environment The supply chain management has received many attentions in the area of that business environment. The purpose of this study is to generate realistic production and distribution planning in the supply chain network. The planning model determines the best schedule using operation sequences and routing to deliver. To solve the problem a hybrid approach involving a genetic algorithm (GA) and computer simulation is proposed. This proposed approach is for: (1) selecting the best machine for each operation, (2) deciding the sequence of operation to product and route to deliver, and (3) minimizing the completion time for each order. This study developed mathematical model for production, distribution, production-distribution and proposed GA-Simulation solution procedure. The results of computational experiments for a simple example of the supply chain network are given and discussed to validate the proposed approach. It has been shown that the hybrid approach is powerful for complex production and distribution planning in the manufacturing supply chain network. The proposed approach can be used to generate realistic production and distribution planning considering stochastic natures in the actual supply chain and support decision making for companies.

• Nuclear Medicine and Molecular Imaging
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• v.43 no.4
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• pp.330-336
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• 2009

Purpose: We established radiolabeling conditions of NOTA and DOTA with a generator-produced PET radionuclide $^{68}$Ga and studied in vitro characteristics such as stability, serum protein binding, octanol/water distribution, and interference with other metal ions. Materials and Methods: Various concentrations of NOTA 3HCl and DOTA 4HCl were labeled with 1 mL $^{68}$GaCl$_3$ (0.18$\sim$5.75 mCi in 0.1 M HCl in various pH. NOTA 3HCl (0.373 mM) was labeled with $^{68}$GaCl$_3$(0.183$\sim$0.232 mCi/0.1 M HCl 1.0 mL) in the presence of CuCl$_2$, FeCl$_2$, InCl$_3$, FeCl$_3$, GaCl$_3$, MgCl$_2$ or CaCl$_2$ (0$\sim$6.07 mM) at room temperature. The labeling efficiencies of $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were checked by ITLC-SG using acetone or saline as mobile phase. Stabilities, protein bindings, and octanol distribution coefficients of the labeled compounds also were investigated. Results: $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were labeled optimally at pH 6.5 and pH 3.5, respectively, and the chelates were stable for 4 hr either in the reaction mixture at room temperature or in the human serum at 37$^{\circ}C$. NOTA was labeled at room temperature while DOTA required heating for labeling. $^{68}$Ga-NOTA labeling efficiency was reduced by CuCl$_2$, FeCl$_2$, InCl$_2$, FeCl$_3$ or CaCl$_3$, however, was not influenced by MgCl$_2$ or CaCl$_2$. The protein binding was low (2.04$\sim$3.32%). Log P value of $^{68}$Ga-NOTA was -3.07 indicating high hydrophilicity. Conclusion: We found that NOTA is a better bifunctional chelating agent than DOTA for $^{68}$Ga labeling. Although, $^{68}$Ga-NOTA labeling is interfered by various metal ions, it shows high stability and low serum protein binding.

• Wind and Structures
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• v.20 no.4
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• pp.489-508
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• 2015

In this paper, a novel methodology is proposed to obtain optimum location of outriggers. The method utilizes genetic algorithm (GA) for shape and size optimization of outrigger-braced tall structures. In spite of previous studies (simplified methods), current study is based on exact modeling of the structure in a computer program developed on Matlab in conjunction with OpenSees. In addition to that, exact wind loading distribution is calculated in accordance with ASCE 7-10. This is novel since in previous studies wind loading distributions were assumed to be uniform or triangular. Also, a new penalty coefficient is proposed which is suitable for optimization of tall buildings. Newly proposed penalty coefficient improves the performance of GA and results in a faster convergence. Optimum location and number of outriggers is investigated. Also, contribution of factors like central core and outrigger rigidity is assessed by analyzing several design examples. According to the results of analysis, exact wind load distribution and modeling of all structural elements, yields optimum designs which are in contrast of simplified methods results. For taller frames significant increase of wind pressure changes the optimum location of outriggers obtained by simplified methods. Ratio of optimum location to the height of the structure for minimizing weight and satisfying serviceability constraints is not a fixed value. Ratio highly depends on height of the structure, core and outriggers stiffness and lateral wind loading distribution.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.6-9
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• 2001

This paper presents a new method which applies a genetic algorithm(GA) for determining which sectionalizing switch to operate in order to solve the distribution system loss minimization re-configuration problem. The distribution system loss minimization re-configuration problem is in essence a 0-1 planning problem which means that for typical system scales the number of combinations requiring searches becomes extremely large. In order to deal with this problem, a new approach which applies a GA was presented. Briefly, GA are a type of random number search method, however, they incorporate a multi-point search feature. Further, every point is not is not separately and respectively renewed, therefore, if parallel processing is applied, we can expect a fast solution algorithm to result.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.862-864
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• 1996

This paper presents a new approach to evaluate reliability indices of electric distribution systems using genetic algorithm(GA). The use of reliability evaluation is an important aspect of distribution system planning and operation to adjust the reliability level of each area. In this paper, the reliability model is based on the optimal load transferring problem to minimize over load generated load point outage in each sub-section. This kind of the approach is one of the most difficult procedure which becomes a combination problems. A new approach using GA Was developed for this problem. We proposed a tree search algorithm which satisfied the tree constraint. GA is general purpose optimization techniques based on principles inspired from the biological evolution such as natural selection, genetic recombination and survival of the fittest Test results for the model system with 24 nodes and 29 branches are reported in the paper.

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1338-1346
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• 2005

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.