• The Transactions of the Korean Institute of Power Electronics
• /
• v.20 no.6
• /
• pp.558-565
• /
• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.1
• /
• pp.13-20
• /
• 2021

GaN has shown good potential owing to its better chemical stability than other materials and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of the solar spectrum, thus improves the solar-to-hydrogen (STH) efficiency. In addition, GaN band gap contains the oxidation and reduction level of water, so it can split water without external voltage. However, STH efficiency using GaN itself is low and has been actively studied recently to improve it. In this thesis, we have summarized the studies related to the use of GaN as a photoelectrode for photoelectrochemical water splitting.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.295-299
• /
• 2012

We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.352-358
• /
• 2002

The variations of the properties of Sr and Mg added $LaGaO_3$ system electrolyte with the amount of the additive and the sintering condition were studied. Main phase was (La$_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$ phase for each compositions and the single phases $(La_{0.85}Sr_{0.15})(Ga_{0.85}Mg_{0.15})O_{3-\delta},(La_{0.85}Sr_{0.15})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ and $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O{3-\delta}$ were obtained with the decrease in the sintering temperature and Mg addition. Thermal expansion coefficient of the $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$ decreased with the increase in the sintering temperature. Electric conductivity of electrolyte sintered at $1500^{circ}C$ for 1h was 0.14 S/cm at $800^{circ}C$ with 1 mA.

• Applied Biological Chemistry
• /
• v.21 no.2
• /
• pp.84-102
• /
• 1978

Barley embryoless half seeds were incubated in medium containing $10{\mu}M$ GA. Time course activity changes of ${\alpha}-amylase$ were studied in extract and medium seperately by the addition of $0.1{\mu}M,\;5{\mu}M,\;and\;10{\mu}M$ ABA in midcourse incubation of 10 hours after GA treatment. MAK profiles of nucleic acids in embryoless half seeds were compared either with $10{\mu}M$ GA treatment or concomitant treatment with $10{\mu}M$ GA and $10{\mu}M$ ABA after 10 hours incubation, Time course changes of weight increase, chlorophyll, protein and RNA consent in addition to RNase activity were studied in the presence of $10{\mu}M$ GA or $10{\mu}M$ ABA in barley coleoptile sections. After 20 hours incubation in the presence of plant hormones, MAK profiles of nucleic acids and reactive distribution of polysome and monosome were investigated. The above results were summarized as follows. 1) The production of ${\alpha}-amylase$ by treatment with GA alone increased at a linear rate in the incubation period and the active secretion of ${\alpha}-amylase$ began from 18 hours incubation in embryoless half seeds. 2) On the contrary to the partial inhibition by addition of $0.1{\mu}M$ ABA, the production of ${\alpha}-amylase$ was completely inhibited by both $5{\mu}M$ and $10{\mu}M$ ABA within 4 hours. Regardless of concentration of GA, the addition of $5{\mu}M$ ABA in midcourse completely inhibited the production of ${\alpha}-amylase$ 3) ABA treatment gave no effect on the secretion of ${\alpha}-amylase$. 4) There were no differences in RNA fractions between GA treatment and concomitant treatment with GA and ABA in the barlye embryoless half seeds. 5) While GA treatment increased the r-RNA fraction, ABA treatment decreased it and increased the s-RNA fraction in the coleoptile sections. 6) GA treatment increased RNA-DNA fraction best ABA treatment decreased it in the coleoptile sections. 7) While GA treatment suppressed RNase activity, ABA treatment increased it in the coleoptile sections. 8) GA treatment gave no great effect on the total RNA but ABA treatment remarkably diminished it in the coleoptile sections. 9) While GA treatment increased the growth and chlorophyll content, ABA treatment decreased them in the coleoptile sections. 10) GA treatment increased the protein synthesis and polysome formation but ABA treatment decreased them in the coleoptile sections. 11) The inhibition effect of ABA on polysome formation seemed to be resulted from the inhibition of r-RNA synthesis by ABA.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.441-446
• /
• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Journal of the Korean Magnetics Society
• /
• v.7 no.1
• /
• pp.44-48
• /
• 1997

The nanocrystalline Nd-Fe-B alloys with low Nd content were prepared by rapid solidification technique. The alloys consist of both$\alpha$-Fe as the main phase and $Nd_2Fe_{14}B_1$ as a secondary phase and have an ultrafine grain structure of about 30 nm. The addition of Ga in $Nd_4Fe_{82}B_{10}Mo_3Cu_1$ alloy increases remanence up to 1.29 T and improves squareness. The nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy has a volume fraction of $Nd_2Fe_{14}B_1$ phase of around 35% due to the increase of Nd content and shows an improved coercivity. The remanence, coercivity and energy product of optimally annealed nanocrystalline $Nd_5Fe_{81}B_9Mo_3Cu_1Ga_1$ alloy are 1.24 T, 257.4 kA/m (3.23 kOe), and 100.3 kJ/ ㎥ (12.6 MGOe), respectively.

• Electronics and Telecommunications Trends
• /
• v.33 no.6
• /
• pp.12-23
• /
• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.30 no.4
• /
• pp.368-374
• /
• 1985

This study was carried out to obtain the basic information for the shortening of emergence period of ginseng by treatment of growth regulators. Seedlings that removed and non-removed bud sac were treated at 10, 50 and 100ppm of GA$_3$, Kinetin and 2,4-D in early December, and investigated the characteristics of new bud emergence and growth vigor in 2-year-old ginseng. GA treatment showed the most desirable effects in shortening of emergence period of new bud, and elevating its emergence rate with increasing of the GA concentration. In addition, GA treatment especially accelerated the growth of stem and petiole length and early finished the growth of aerial parts of ginseng. On the other hand, root weights were mainly increased by formation of a lot fine roots in GA 50, 100ppm plots.

• Journal of Power Electronics
• /
• v.16 no.1
• /
• pp.84-92
• /
• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.