• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.569-575
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• 1998

Investigation of the structure of the gangliosides has proven to be very important in the understanding of their biological roles. We have determined the tertiary structure of asialoganglioside GM1 $(GA_1)$ using NMR spectroscopy and distance geometry calculations. All of the structures are very similar except the glycosidic torsion angles in the ring IV and ring III linkages. There are two low-energy structures for GA1, G1 and G2. G1 differs from G2 only in the IV-III glycosidic linkages and the orientation of acetamido group in ring III. There is a stable intramolecular hydrogen bond between the third hydroxyl group in ring I and the ring oxygen atom in ring II. Also, there may be a weak hydrogen bond between the second hydroxyl group in ring IV and the acetamido group in ring III. Small coupling constants of $^3J_{IH3,IOH3}\; and\; ^3J_{IVH2,IVOH2}$ support this result. Overall structural features of $(GA_1)$ are very similar to those of $(GM_1)$. It implicates that specificities of the sugar moieties in GM1 are caused not by their tertiary foldings, but mainly by the electrostatic interactions between the polar sialic acid and its receptors. Since it is evident that $(GA_1)$ is more hydrophobic than $(GA_1)$, a receptor with a hydrophobic binding site can recognize the $(GA_1)$ better than $(GA_1)$. Studies on the conformational properties of $(GA_1)$ may lead to a better understanding of the molecular basis of its functions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.1-9
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• 2004

Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.222-222
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• 2010

III-V반도체 태양전지는 다양한 에너지 밴드갭을 만들 수 있으며 다중접합 태양전지의 경우 흡수 전류가 커져 효율이 증가한다. 태양전지의 효율의 증가는 태양광 발전시스템의 발전 단가를 낮추는 중요한 요인이다. 우리는 효율이 높은 III-V 태양전지를 제작하기 위해 일차적으로 Ge기판 위에 GaAs를 성장하고자 한다. Ge기판과 GaAs의 격자상수는 0.07%차이로 거의 일치하나 물질의 열팽창계수가 다르고 비극성인 Ge기판 위에 극성인 GaAs를 성장 시 위상불일치(Anti Phase Domain) 나타난다. 위상불일치 현상을 줄이기 위해 성장 시 온도와 V/III비율, 성장두께 등을 달리하여 성장한다. 표면의 상태가 좋아질수록 위상불일치 현상이 작으며 단일성장 보다 두 단계 과정으로 성장 했을 때 표면의 상태가 더 좋은 결과를 바탕으로[1], 20nm 이하로 얇게 seed층을 성장하고 그 위에 두꺼운 버퍼층을 성장하는 두 단계로 진행하였다. seed층의 성장온도는 $400{\sim}550^{\circ}C$, V/III 비율을 3.5~30으로 다양하게 바꿔가면서 표면의 상태를 비교하였다. 이때 버퍼층의 성장 온도와 V/III 비율은 $680^{\circ}C$, 192으로 일정하게 유지하였다. 표면은 SEM과 AFM을 통해 분석하였으며 결정질의 상태는 XRD 장비(Panalytical사)로 분석하고 광학적 특성은 LTPL(Accent Optical Technologies사)로 측정하였다. 실험의 결과는 seed층의 온도가 낮고 V/III 비율이 낮으며 성장률이 높았을 때 표면상태가 좋은 반면 버퍼층은 온도가 높고 V/III 비율이 높으며 성장률이 낮을 때 표면상태가 좋았다. seed층을 $450^{\circ}C$온도에서 V/III 비율이 3.5이고 성장률이 버퍼층에 비교하여 크게 하여 성장 했을 때 표면 거칠기가 3.75nm로 작아 표면의 상태가 좋음을 확인할 수 있었다. 두 단계 성장 시 표면의 상태는 seed층의 조건에 따라 결정됨을 알 수 있었다. 표면상태가 좋았을 때 결정상태 역시 좋았으며 성장률이 바뀜에 따라 반치폭이 42~45 arcsec의 값을 나타내었다. 광학적 특성은 10K에서 1.1512eV 밴드갭 에너지를 가지고 있어 양질의 GaAs가 성장됨을 알 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.56-61
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• 2015

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2762-2764
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.330.2-330.2
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• 2014

III-V족 화합물반도체는 트랜지스터와 광다이오드, 레이저 등의 광전소자 제작물질로 오랫동안 사용 되어 왔다. III-V 화합물 반도체로 제작된 광전소자의 특성을 향상시키기 위해선 다양한 형태의 표면구조가 필요하며, distributed feedback 레이저나 distributed Bragg reflector 레이저의 경우 높은 aspect-ratio를 가지는 구조를 필요로 한다. 현재까지 높은 aspect-ratio를 가지는 III-V족 화합물반도체 구조제작을 위해 reactive ion etching (RIE) 방식을 사용 하였는데, 이 방법은 ion collision에 의한 표면손상과 더불어 에칭 잔여물이 남아 반도체 표면을 오염시키는 문제점을 가지고 있다. 이를 개선하기 위하여 MaCE (Metal-Assited chemical etching)법이 최근 제안되었는데, 본 연구에서는 MaCE 방법을 통하여 다양한 형태의 GaAs 표면구조를 제작하였다. 본 실험을 통하여 에칭용액 조건에 따라 GaAs의 구조적 특성과 morphology가 달라지는 것을 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1151-1156
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the InP/lnGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were $1\mum \;and \;0.4\mum$, respectively. The fabrication of InGaAsP microstructures involves front-side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <100> direction since the etching of the beam in the <100> direction is more faster than that of the beam in the <110> and <110> direction.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.