• The Journal of the Korean dental association
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• v.15 no.2
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• pp.115-120
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• 1977

Extensive avulsion of the scalp, or stripping of a large area of soft tissue from the skull, is a serious accidnet. The avulsed scalp is often injured otherwise, such as by crushing, tearing, or from multiple laceration. The surrounding skin may be devitalized. Replacement of the scalp is usually followed by necrosis and sloughing within a short time. In such instances, the outer table of the cranium may become sucessively exposed. dry, dead, and affected by osteomyelitis. Hence the securing of early healing to prevent these is of the utmost importance. The successful case of reimplantation of the completely avulsed scalp, which is exposured to air for about 14 hours, is reported, in which there was partial growth of hair afterwards. The avulsed scalp caused by her long hair being caught in a grain belt was contaminated with hairs & dust. Authors treated this 19-year old female patient by split thickness skin graft, intermediate skin graft, full thickness skin graft from her own avulsed scalp.

• Journal of Surface Science and Engineering
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• v.53 no.5
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.338-338
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• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.231-232
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• 2007

Nickel oxide thin films were deposited by the DC magnetron reactive sputtering process under the conditions such as various oxygen flow rates(0, 3, 6, 8, 10 sccm) with constant 33 sccm argon flow rate for the sputtering time of 40 second with the power of 0.3 kW. Sheet resistances were measured by the four point probes. In order to observe discharge voltage characteristics according to the oxygen flow rates, the sputtering processes were performed under the powers of 0.2kW and 0.3kW. The feasibility of the coating system for high quality ferromagnetic thin films was tested through the electromagnetic simulation and the thin film thickness measurement from the experiment. It was shown that a discharge voltage was decreased under the low power and low oxygen flow rate, since the oxygen was quickly saturated on nickel target surface. The sheet resistance was increased as oxygen flow rate increased. The film thickness deposited by the coating system for ferromagnetic target was improved approximately 10% in comparison with previous coating systems.

• Journal of Magnetics
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• v.9 no.3
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• pp.79-82
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• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.

• Journal of Surface Science and Engineering
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• v.54 no.4
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• pp.200-208
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• 2021

This paper investigated generation behavior of micro-arcs and growth behavior of PEO films on the AA7050 disc specimen in 0.1 M NaAlO₂ solution under the application of 1200 Hz anodic pulse current. Morphologies, thickness and surface roughness of PEO films were examined at the edge part and central part separately. Micro-arcs were generated first at the edge part and then moved towards the central part with PEO treatment time, indicating lateral growth of PEO films. The lateral growth resulted in uniform PEO thickness of about 5 ㎛ and surface roughness of about 0.5 ㎛. Moving of the arcs from the edge towards the central part appeared only one time and large size arcs were generated at the edge before completing the central part with small size micro-arcs. This suggests that vertical growth starts before completing the lateral growth. Large size arcs generated at the edge resulted in the formation of relatively large size pores within the PEO films on the AA7050 disc specimen.

• Journal of Microbiology and Biotechnology
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• v.32 no.12
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• pp.1599-1604
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• 2022

Storage stability of freeze-dried lactic acid bacteria is a critical factor for their cost-effectiveness. Long-term storage of lactic acid bacteria enables microbial industry to reduce distribution costs. Herein, we investigated the effect of cold adaptation under supercooling conditions at -5℃ on the viability of Leuconostoc mesenteroides WiKim32 during the freeze-drying process and subsequent storage. Cold adaptation increased the thickness of exopolysaccharides (EPS) and improved the viability of freeze-dried Leu. mesenteroides WiKim32. Compared to non-adapted cells, cold-adapted cells showed a 35.4% increase in EPS thickness under supercooling conditions. The viability of EPS-hydrolyzed cells was lower than that of untreated cells, implying that EPS plays a role in protection during the freeze-drying process. Cold adaptation increased the storage stability of freeze-dried Leu. mesenteroides WiKim32. Fifty-six days after storage, the highest viability (71.3%) was achieved with cold adaptation at -5℃. When EPS-containing broth was added prior to the freeze-drying process, the viability further increased to 82.7%. These results imply that cold adaptation by supercooling pretreatment would be a good strategy for the long-term storage of Leu. mesenteroides WiKim32.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1057-1062
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• 2001

We investigated the change of mechanical properties for TiNi shape memory alloy by heat treatment. 6061Al matrix composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum casting. TiNi alloy has the maximum tensile strength at 673K treated and there is no change of tensile strength and hardness at 448K treated. The composites, prepared by vacuum casting, showed good interface bonding by vacuum casting. It was about 3$\mu\textrm{m}$ of thickness of the diffusion layer. Tensile strength of the composite was in higher than that of 6061Al alloy as increased value of about 70MPa at room temperature and about 110MPa at 363K. We thought that the increase of the tensile strength at 363K was due to reverse transformation of the TiNi shape memory alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.