• 제목/요약/키워드: GAA

검색결과 54건 처리시간 0.02초

Expression and Characterization of RNA-dependent RNA Polymerase of Dendrolimus punctatus Tetravirus

  • Zhou, Liang;Zhang, Jiamin;Wang, Xiaochun;Jiang, Hong;Yi, Fuming;Hu, Yuanyang
    • BMB Reports
    • /
    • 제39권5호
    • /
    • pp.571-577
    • /
    • 2006
  • Dendrolimus punctatus tetravirus (DpTV) has been identified as a new member of the genus Omegatetravirus of the family Tetraviridae that may be related serologically to Nudaurelia capensis virus ($N{\omega}V$). To establish the function of DpTV RNA genome and to better understand the mechanism of viral replication, the putative RNA-dependent RNA polymerase (RdRp) domain has been cloned and expressed in Escherichia coli. The recombinant protein was purified on a Ni-chelating HisTrap affinity column and demonstrated to initiate viral RNA synthesis in a primer-independent manner but not by terminal nucleotidyle transferase activity in the presence of $Mg^{2+}$ and RNA template. Mutation of the GDD to GAA interferes with the residues at the polymerase active site and metal ions, and thus renders the polymerase inactive.

Identification of pol Gene Mutation among BLV Proviruses Found in the Southern Province of Korea

  • Kwon, Oh-Sik
    • 대한바이러스학회지
    • /
    • 제30권2호
    • /
    • pp.131-139
    • /
    • 2000
  • Bovine leukemia virus (BLV) is an etiological agent of chronic diseases in cows worldwide. The BLV is one of retroviruses that contain a multi-functional enzyme, reverse transcriptase produced from the pol gene in its genome. We have sequenced some regions in the pol gene of BLV proviruses found in the Southern province of Korea from samples that turned out to be BL V positives by a PCR analysis. On the 5' side of the BLV pol gene (polymerase region), it was found that there were four leucines located at every 7 amino acids. They can form a leucine zipper motif that was not same as the pol gene of Japanese BLV isolate. The sequencing result of the proviral pol gene in Korean-type BLV also revealed some mutations leading to amino acid changes such as $CCT(Pro){\to}CTC(Leu)$, $AAT(Asn){\to}AAA(Lys)$, and non-sensible variations i.e., $TCT(Ser){\to}TCC(Ser)$, $ATT(Ile){\to}ATC(I1e)$ and $ACG(Thr){\to}ACA(Thr)$. On the 3' side of the pol gene (integrase region), some nucleotide sequences were mutated and led to amino acid changes. Among them, a mutation, $GAA(Glu){\to}GAC(Asp)$ occurred in many Korean-type BLV proviruses was very interesting because the amino acid was regarded as one of the most conserved amino acids in the retroviral integrase. It was also notable that the mutation on any leucine residue did not occur, in spite of its frequent appearance.

  • PDF

Automated measurement and analysis of sidewall roughness using three-dimensional atomic force microscopy

  • Su‑Been Yoo;Seong‑Hun Yun;Ah‑Jin Jo;Sang‑Joon Cho;Haneol Cho;Jun‑Ho Lee;Byoung‑Woon Ahn
    • Applied Microscopy
    • /
    • 제52권
    • /
    • pp.1.1-1.8
    • /
    • 2022
  • As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto fattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.

InGaAs-based Tunneling Field-effect Transistor with Stacked Dual-metal Gate with PNPN Structure for High Performance

  • Kwon, Ra Hee;Lee, Sang Hyuk;Yoon, Young Jun;Seo, Jae Hwa;Jang, Young In;Cho, Min Su;Kim, Bo Gyeong;Lee, Jung-Hee;Kang, In Man
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제17권2호
    • /
    • pp.230-238
    • /
    • 2017
  • We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

Substitution of Glycine 275 by Glutamate (G275E) in Lipase of Bacillus stearothermophilus Affects Its Catalytic Activity and Enantio- and Chain Length Specificity

  • Kim, Myung-Hee;Kim, Hyung-Kwoun;Oh, Byung-Chul;Oh, Tae-Kwang
    • Journal of Microbiology and Biotechnology
    • /
    • 제10권6호
    • /
    • pp.764-769
    • /
    • 2000
  • The lipase gene(lip) from Bacillus stearothermophilus was recombined in vitro by utilizing the DNA shuffling technique. After four rounds of shuffling, transformation, and screening based on the initial rate of clear zone formation on a tricaprylin plate, a clone (M10) was isolated, the cell extract of which showed about 2.8-fold increased lipase activity. The DNA sequence of the mutant lipase gene (m10) showed 3 base changes, resulting in two cryptic mutations and one amino acid substitution: S113($AGC{\rightarrow}AGT$), L252 ($TTG{\rightarrow}TTA$), and G275E ($GGA{\rightarrow}GAA$). SDS-PAGE analysis revealed that the increased enzyme activity observed in M10 was partly caused by high expression of the m10 lipase gene. The amount of the expressed G275E lipase was estimated to comprise as much as 41% of the total soluble proteins of the cell. The maximum velocity ($V_{max}$) of the purified mutant enzyme for the hydrolysis of olive oil was measured to be 3,200 U/mg, which was 10% higher than that of the parental (WT) lipase (2,900 U/mg). Its optimum temperature for the hydrolysis of olive oil was $68^{\circ}C$ and it showed a typical $Ca^{2+}$-dependent thermostability, properties fo which were the same as those of the WT lipase. However, the mutant enzyme exhibited a high enantiospecificity towards (S)-naproxen compared with the WT lipase. In addition, it showed increased hydrolytic activity towards triolein, tricaprin, tricaprylin, and tricaproin.

  • PDF

Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

  • Roh, Hee Bum;Seo, Jae Hwa;Yoon, Young Jun;Bae, Jin-Hyuk;Cho, Eou-Sik;Lee, Jung-Hee;Cho, Seongjae;Kang, In Man
    • Journal of Electrical Engineering and Technology
    • /
    • 제9권6호
    • /
    • pp.2070-2078
    • /
    • 2014
  • In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

오가피(Acanthopanax sessiliflorus)의 체세포배로부터 식물체 재생에 미치는 GAa3와 Charcoal의 영향 (Effects of GA3 and Charcoal on Plant Regeneration from Somatic Embryos of Acanthopanax sessiliflorus)

  • 이강섭;최용의;심옥경;주선아;신정순;정재훈;김영신;김이엽
    • Journal of Plant Biotechnology
    • /
    • 제29권4호
    • /
    • pp.253-257
    • /
    • 2002
  • To establish the optimum condition for plant regeneration from somatic embryos of Acanthopanax sessiliflorus Rupr. et Maxim, a medicinal plant, somatic embryos were induced from zygotic embryo-derived embryogenic callus in hormoen-free MS medium. To induce plantlet conversion, cotyledonary somatic embryos were cultured on MS solid medium with GA$_3$at various concentrations (0~10 mg/L) for three weeks. Plantlets were transferred to 1/3 MS solid medium with 0.5% charcoal for 7 weeks. Stem length was increased proportionally to the concentration and treatment period of GA$_3$. Also, the highest leaf width (8.9 mm) and leaf number (2.84) of plantlet were obtained when plantlets were converted on 5,10 mg/L GA$_3$pretreatments, respectively. The highest plant conversion frequency (66.7%) was obtained when the somatic embryos were cultured on medium containing 5 mg/L GA$_3$ for 3 weeks and then were transferred to 1/3 MS medium with 0.5% charcoal. The highest survival rate of soil transfer was 90% when plantlets were regenerated on medium with 5 mg/L GA$_3$ for 3 weeks and then transferred to plastic pots containing vermiculite and sand mixture for 4 weeks.

대장균 O157:H7의 독소 생성 유전자의 변이에 의한 변성독소 생산 및 미량독소 검출을 위한 단클론성 항체생산 I. 독소 생성 유전자의 변이에 의한 변성독소의 발현 (Production of toxoid and monoclonal antibody by mutation of toxin gene from Escherichia coli O157: H7 for detection of low levels of the toxin I. Expression of toxoid by mutagenesis of verotoxin gene)

  • 김용환;강호조;김상현;이은주;차인호;이우원
    • 대한수의학회지
    • /
    • 제41권2호
    • /
    • pp.189-195
    • /
    • 2001
  • Single base substitution and deletion mutation have been introducted into the verotoxin 2 (VT2)A subunit gene from O157:H7 isolates to reduce cytotoxicity of VT2 and the cytotoxicity between wild type toxin and mutant toxoid were compared. A M13-derived recombinant plasmid pEP19RF containing a 940bp EcoRI-PstI fragment of VT2A gene was constructed for oligonucleotide-directed mutagenesis. The duoble mutant pDOEX was constructed by point and deletion mutation of two different highly conserved regions of VT2A encoding active site cleft of enzymatic domain. The key residue, Glu 167(GAA) and the pentamer(WGRIS) consisting of the enzymatic domain were replaced by ASP(GAC) and completely deleted in nucleotide sequence analysis of mutant, respectively. In the comparision of vero cell cytotoxicity between wide type toxin and toxoid from mutant, the wild type toxin expressed cytotoxicity in dilution of $10^{-6}$, but the toxid from mutant did not show cytotoxicity to vero cells.

  • PDF

Investigation of InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistors

  • Eun, Hye Rim;Woo, Sung Yun;Lee, Hwan Gi;Yoon, Young Jun;Seo, Jae Hwa;Lee, Jung-Hee;Kim, Jungjoon;Kang, In Man
    • Journal of Electrical Engineering and Technology
    • /
    • 제9권5호
    • /
    • pp.1654-1659
    • /
    • 2014
  • Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

웹툰플랫폼 성공요인에서 도출한 플랫폼 정부 활성화 방안 (Government as a Platform Revitalization Strategy Derived from Webtoon Platform Success Factors)

  • 서형준
    • 디지털융복합연구
    • /
    • 제19권10호
    • /
    • pp.1-13
    • /
    • 2021
  • 본 연구는 플랫폼 정부를 차세대 정부 모델로 상정하고, 국내의 대표적인 플랫폼 비즈니스 성공 모델인 웹툰플랫폼의 성공요인으로부터 플랫폼 정부의 활성화 방안을 도출하고자 하였다. 특히 네이버웹툰의 사례를 중심으로 플랫폼 전략의 핵심요소에 따라 성공요인을 도출하였다. 첫째, 플랫폼 인프라 측면에서 기존의 강력한 포털사이트의 플랫폼 기반에 구축되어 이용자를 모으기 용이하고, 로그인 없이 웹툰을 이용하는 등 플랫폼의 접근성을 제고 하였다. 둘째, 이해관계자 참여 측면에서 웹툰 무료제공으로 이용자를 모았고, PPS라는 수익모델을 통해 웹툰 창작자에 대한 인센티브를 제공하고, 다른 이해관계자와 연결시키는 등 매개자 역할을 수행하였다. 셋째, 산출물 생산 측면에서 웹툰 하단에 피드백을 실시간으로 제공하여 이용자들이 웹툰제작에 영향을 끼칠수 있도록 하였다. 그리고 인큐베이팅 시스템을 통해 이용자도 언제든 직접 웹툰을 제작할 수 있도록 하였다. 또한 PPS를 통해 2차 산출물 생산을 지원하여, 웹툰에 한정되지 않는 다양한 콘텐츠 생산을 가능케 하였다. 네이버웹툰 사례를 통해 도출된 성공요인에 라 국내 플랫폼 정부의 활성화 방안을 제시하였다.