• Journal of Microbiology and Biotechnology
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• v.20 no.1
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• pp.202-207
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• 2010

Plant growth promoting fungi (PGPF) are well known for the production of useful secondary metabolites. However, limited information is available on the gibberellin (GA) production capacity of PGPF of endophytic origin. In the current study, 15 fungal endophytes were isolated from the roots of Crown daisy, and then screened on Waito-c rice, in order to identify plant growth promoting fungi. The fungal isolate MH7 significantly increased the shoot length (12.1 cm) of Waito-c in comparison with control treatment (7.9 cm). In a separate experiment, the culture filtrate (CF) of MH7 significantly promoted the growth attributes of Crown daisy. The MH7 CF was analyzed for gibberellins and it contained all physiologically active gibberellins ($GA_1$, 1.37 ng/ml; $GA_3$, 5.88 ng/ml; $GA_4$, 8.62 ng/ml; and $GA_7$, 2.05 ng/ml) in conjunction with physiologically inactive $GA_9$ (0.83 ng/ml), $GA_{12}$ (0.44 ng/ml), $GA_{15}$ (0.74 ng/ml), $GA_{19}$ (1.16 ng/ml), and $GA_{20}$ (0.98 ng/ml). The CF of MH7 produced higher amounts of $GA_3$, $GA_4$, $GA_7$, $GA_9$, and $GA_{12}$ than wild-type Fusarium fujikuroi, which was used as a control for GA production. The fungal isolate MH7 was later identified as a new strain of Penicillium on the basis of its morphological characteristics and phylogenetic analysis of the 188 rDNA sequence.

• Horticultural Science & Technology
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• v.34 no.4
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• pp.528-536
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• 2016

This study was conducted to examine the effect of 0.4% of $CaCl_2$, $2H_2O$, $1mg{\cdot}L^{-1}$ of Calmodulin (CaM)-SH, 250-folds of coating agent (WE-36), 1,000-folds of $GA_{4+7}+BA$ and 3 types of paper bagging treatments on russet incidence and fruit quality attributes of 'Gamhong' apple. The pattern of russet occurrence was slightly different for 4 years (from 2012 to 2015) in 'Gamhong' apple. The russet occurrence was lowest in $GA_{4+7}+BA$ treatment at 20 days after full bloom (DAFB), compared with other treatments. The $GA_{4+7}+BA$ treatment increased fruit weight at 20 DAFB, while the other fruit quality attributes were not influenced. The russet occurrence was lower not only in a single bag application than in untreated ones but also in yellow bagging and discolored bagging applications than in a white bagging application. The russet occurrence in a bagging application was lower at 20 DAFB than at 30 and 40 DAFB, while fruit quality attributes were not affected by bagging applications. The russet incidence was lower in $GA_{4+7}+BA$ twice treatments at 20 and 30 DAFB, and calcium coated bag at 30 DAFB after $GA_{4+7}+BA$ treatment at 20 DAFB than in untreated fruit. The rate of russet incidence was lowest at equator region in $GA_{4+7}+BA$ treatment, compared with the other fruit regions. Overall, the results suggest that one and/or two applications of $GA_{4+7}+BA$ (1,000-folds) treatment at 20 DAFB should reduce the risk of russet incidence in 'Gamhong' fruit.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.359-364
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• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• Journal of Korean Society of Forest Science
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• v.87 no.4
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• pp.549-556
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• 1998

To develop the effective methods of flowering stimulation, Hinoki cypress (Chamaecyparis obtusa Sieh. et Zuec.) grafts growing in a seed orchard and in a clone bank in Southern Breeding Station of Cheju were applied with gibberellin treatments, and predicted the seed production potential. In the seed orchard, $GA_{4/7}$ 1.5cc was injected into the stem of drafts and sprayed whale tree crown with $GA_3$ 300ppm and $GA_{4/7}$ 300ppm. Un the other hand, in the clonal archives, drafts were given intrusion of $GA_{4/7}$ 1.5cc into the excised and open inner part of bark wind $GA_3$ 20mg and sprayed with $GA_3$ 300ppm. Additionally, grafts growing in the seed orchard were treated with gibberellins at 3 different periods of time and 3 different treatments during the growing season. The results obtained here are summarized as follows : 1. All of the applications of Gilbberellin promoted female flower formation. Among these, the treatment of intrusion of $GA_{4/7}$ 1.5cc into the excised and open inner part of bark was racist effective, followed by the spraying of $GA_3$ 300ppm. Similarly, the applications of gibberellin promoted male flower formation. 2. Regarding the time of applications, treatment on August 15 was more effective than those of August 31 and September 11 in the stimulation of female flowers. On the contrary, there was no significant difference in the number of male flowers among 3 different time treatments. 3. It was supposed that the application of the intrusion of $GA_{4/7}$ 1.5cc into the excised and open inner part of bark on August 15 showing the best effect in female flower formation can produce 22.12kg seeds per ha. 4. Considerable significant difference existed among clones for both female and male flower formations. 5. Flower formation, especially female flower formation, seemed to be partially associated with the genetic potential of individual trees.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.4
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• pp.360-368
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• 1988

A 14 to 14.5 GHz low noise MIC amplifier is designed on the $Al_2$$O_3$ substrate. The amplifier which uses a GaAsMESFET developed at COMSAT Laboratories has been designed and optivized to have gain greater than 7dB and noise figure less than 2dB using Super-Compact program. Experimental results show that the gain of the amplifier is 7 to 7.7 dB, while noise figure is 3.8 to 4.3dB through the desired band.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Journal of the Korean Chemical Society
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• v.24 no.4
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• pp.302-309
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• 1980

The solubilities of n-propyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of n-propyl bromide in nitrobenzene is greater than in 1,2,4-trichlorobenzene, indicating a stronger interaction of n-propyl bromide with nitrobenzene than with 1,2,4-trichlorobenzene. In the presence of gallium bromide, 1: 1 complex $n-C_3H_7Br\cdotGaBr_3$ is formed in the solution. The instability constant K of the complex was evaluated. $$n-C_3H_7Br\cdotGaBr_3 \rightleftarrows n-C_3H_7Br ＋ \frac{1}{2Ga_2Br_6 }$$The change of enthalpy, free energy and entropy for the dissociation of the complex were also calculated. It seems that the stabilities of the complex, gallium bromide with alkyl bromide, are relatively concerned with the stabilities of the alkyl ion.

• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.271-276
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• 2002

고체산화물 연료전지의 구성요소인 전해질의 $(La_{1-x}Sr_x)(Ga_{1-y}Mg_y)O_{3-\delta}$계의 결정상 및 미세구조특성을 연구하였다. Mg의 첨가량이 증가할수록 Sr의 고용량도 증가하였으며 Sr의 함량이 많으면 2차상인 $LaSrGa_3O_7$상이 생성되었으며 Mg의 첨가량이 증가함에 따라서는 $LaSrGaO_4$상이 생성되었다. $LaSrGaO_4$상이 생성된 경우에는 낮은 전도도를 나타내었으며 $LaSrGa_3O_7$상의 경우에는 전기전도도에 큰 영향을 미치지 않았다. 또한 Sr과 Mg 첨가량의 증가는 grain 성장을 억제하였으며 $(La_{0.8}Sr_{0.2})(Ga_{0.8}Mg_{0.2})O_{3-\delta}$는 $1000^{\circ}C$에서 0.1S/cm 정도의 전기전도도를 나타내었다.