• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.13-16
• /
• 2001

InP/InGaAs Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter electrode were fabricated and characterized. At the same time, heterojuntion transistors(HBT's) having the same device layout were fabricated. By comparison with InP/InGaAs HBT's, the do characteristics of InP/InGaAs HPT's showed the similar electrical charateristics of HBT's. the model parameters of the device were extracted and compared.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.12
• /
• pp.2025-2031
• /
• 1989

In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.2
• /
• pp.83-92
• /
• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.10a
• /
• pp.164-167
• /
• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• Journal of Institute of Control, Robotics and Systems
• /
• v.14 no.6
• /
• pp.573-579
• /
• 2008

This paper introduces a new approach to develop a fast gait for quadruped robot using GP(genetic programming). Planning gaits for legged robots is a challenging task that requires optimizing parameters in a highly irregular and multidimensional space. Several recent approaches have focused on using GA(genetic algorithm) to generate gait automatically and shown significant improvement over previous results. Most of current GA based approaches used pre-selected parameters, but it is difficult to select the appropriate parameters for the optimization of gait. To overcome these problems, we proposed an efficient approach which optimizes joint angle trajectories using genetic programming. Our GP based method has obtained much better results than GA based approaches for experiments of Sony AIBO ERS-7 in Webots environment.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.5
• /
• pp.804-812
• /
• 1987

1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

• Computers and Concrete
• /
• v.11 no.6
• /
• pp.541-569
• /
• 2013

There is a wide variety of existing Genetic Algorithms (GA) operators and parameters in the literature. However, there is no unique technique that shows the best performance for different classes of optimization problems. Hence, the evaluation of these operators and parameters, which influence the effectiveness of the search process, must be carried out on a problem basis. This paper presents a comparison for the influence of GA operators and parameters on the performance of the damage identification problem using the finite element model updating method (FEMU). The damage is defined as reduction in bending rigidity of the finite elements of a reinforced concrete beam. A certain damage scenario is adopted and identified using different GA operators by minimizing the differences between experimental and analytical modal parameters. In this study, different selection, crossover and mutation operators are compared with each other based on the reliability, accuracy and efficiency criteria. The exploration and exploitation capabilities of different operators are evaluated. Also a comparison is carried out for the parallel and sequential GAs with different population sizes and the effect of the multiple use of some crossover operators is investigated. The results show that the roulettewheel selection technique together with real valued encoding gives the best results. It is also apparent that the Non-uniform Mutation as well as Parent Centric Normal Crossover can be confidently used in the damage identification problem. Nevertheless the parallel GAs increases both computation speed and the efficiency of the method.

• Journal of Power Electronics
• /
• v.15 no.2
• /
• pp.479-486
• /
• 2015

The application of soft-switching techniques is increasing in the DC/DC converter area. It is important to design soft-switching parameters to ensure the converter operates properly and efficiently. An optimized design method is presented in this paper. The objective function is the total power loss of a converter, while the variables are soft-switching parameters and the constraints are the electrical requirements for soft-switching. Firstly, a response surface methodology (RSM) model with a high precision is built, and the rough optimized parameters can be obtained with the help of a genetic algorithm (GA) in the solution space determined by the constraints. Secondly, a re-optimization is conducted with a SPICE model and a GA, and accurate optimized parameters can be obtained. Simulation and experiment results show that the proposed method performs well in terms of a wide adaptability, efficiency, and global optimization.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.116-121
• /
• 2000

We measured surface photovoltage (SPV) of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer grown by molecular beam epitixy (MBE). The band gap energies of $Al_{0.24}Ga_{0.76}As/GaAs$ epilayer, GaAs substrate and buffer layer obtained from SPV signals are 1.70, 1.40 and 1.42 eV, respectively. There results are in good agreements with photoreflectance (PR) measurement. The measured SPV intensity of GaAs substrate is three times larger than $Al_{0.24}Ga_{0.76}$Asepilayer by carrier mobility difference. The parameters of Varshni equation were determined from the SPV spectra as a function of temperature.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.4
• /
• pp.121-128
• /
• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.