• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Journal of Korean Society of Water and Wastewater
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• v.12 no.2
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• pp.50-58
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• 1998

Genetic Algorithm (GA) consists of selection, reproduction, crossover and mutation processes and many parameters including population size, generation number, the probability of crossover (Pc) and the probability of mutation (Pm). Determining values of the parameters is found critical in the whole optimization process and a sensitivity analysis with them seems mandatory. This paper tries to demonstrate such importance of sensitivity analysis of GA using an example water supply tunnel network of the New York City. For optimization of the network with GA, Pc and Pm vary from 0.5 to 0.9 by an increment of 0.1 and from 0.01 to 0.05 by an increment of 0.01, respectively, while fixing both the population size and the generation number to 100. This sensitivity analysis results in an optimum design of 22.3879 million dollars at the values of 0.8 and 0.01 for Pc and Pm, respectively. In addition, the probability of recombination (Pr) is introduced to check its applicability in the GA optimization of water distribution network. When Pr is 0.05 with the same values of Pc and Pm as above, the optimum design costs 20.9077 million dollars. This is lower than the cost of 22.3879 million dollars for the case of not using Pr by 6.6%. These results indicate that conducting a sensitivity analysis with parameter values and using Pr are useful in the optimization of WDN.

• ETRI Journal
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• v.17 no.3
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• pp.17-43
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• 1995

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2192-2195
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• 2002

Even though, tanks are used at the many industry plants, it is very difficult to control the tank level without any overflow and shortage; moreover, cause of its complication of dynamics and nonlinearity, it's impossible to realize the accurate control using the mathematical model which can be applied to the various operation modes. However, the sliding mode controller(SMC) is known as having the robust variable structures for the nonlinear control systems with the parametric perturbations and with the sudden disturbances. It's difficult to find SMC's parameters, and SMC is bring chattering which injures actuator and increases error. In this paper, Genetic Aloglism based Fuzzy Sliding Mode Controller(GA-FSMC) for the precise control of the coupled tank level was proposed. Genetic Algolism and Fuzzy logic are adapted to find SMC's parameters and reduce the chattering. The simulation result is shown that the tank level could be satisfactorily controlled with less overshoot and steady-state error by the proposed GA-FSMC.

• Journal of the Korean Institute of Intelligent Systems
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• v.15 no.4
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• pp.451-456
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• 2005

In this paper, we propose the navigation control method for intelligent robot using messy genetic algorithm. The fuzzy controller design for navigation of the intelligent robot was dependant on expert's knowledge. But, the parameters of the fuzzy logic controller obtained from expert's control action may not be outimal. In this paper, to solve the above problem, we propose the identification method to automatically tune the number of fuzzy rule and parameters of memberships of fuzzy controller using mGA. Finally, to show and evaluate the generality and feasibility of the proposed method, we provides some simulations for wall following navigation of intelligent robot.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.3
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• pp.181-189
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• 2008

GaAs film growth process from trimethylgallium(TMGa) and tertiary-butylarsine(TBAs) using a horizontal MOCVD reactor was numerically studied to explain the experimental result that the decreasing surface reaction rate as the increasing partial pressure of group III species. Using the non-linear model based on the Langmuir isotherm which considers the adsorption and desorption of molecules, film deposition over the entire reactor scale was predicted by computational fluid dynamics (CFD) with the aid of the parameters obtained from the selective area growth (SAG) technique. CFD Results using the non-linear surface reaction model with the parameters determined from the SAG experiments predicted too high film growth rate compared to the measured values at the downstream region where the temperature was decreased abruptly. The pairs of ($k_s^n$, K) from the numerical simulations was $(2.52{\times}10K^{-6}mol/m^2/s,\;1.6{\times}10^5m^3/mol)$, whereas the experimentally determined was $(3.58{\times}10^{-5}mol/m^2/s,\;6.9{\times}10^5m^3/mol)$.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.60-61
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• 2003

A new approach to reduce the computation time of genetic algorithm (GA) for making binary phase holograms is described. Synthesized holograms having diffraction efficiency of 75.8% and uniformity of 5.8% are proven in computer simulation and experimentally demonstrated. Recently, computer-generated holograms (CGHs) having high diffraction efficiency and flexibility of design have been widely developed in many applications such as optical information processing, optical computing, optical interconnection, etc. Among proposed optimization methods, GA has become popular due to its capability of reaching nearly global. However, there exits a drawback to consider when we use the genetic algorithm. It is the large amount of computation time to construct desired holograms. One of the major reasons that the GA' s operation may be time intensive results from the expense of computing the cost function that must Fourier transform the parameters encoded on the hologram into the fitness value. In trying to remedy this drawback, Artificial Neural Network (ANN) has been put forward, allowing CGHs to be created easily and quickly (1), but the quality of reconstructed images is not high enough to use in applications of high preciseness. For that, we are in attempt to find a new approach of combiningthe good properties and performance of both the GA and ANN to make CGHs of high diffraction efficiency in a short time. The optimization of CGH using the genetic algorithm is merely a process of iteration, including selection, crossover, and mutation operators [2]. It is worth noting that the evaluation of the cost function with the aim of selecting better holograms plays an important role in the implementation of the GA. However, this evaluation process wastes much time for Fourier transforming the encoded parameters on the hologram into the value to be solved. Depending on the speed of computer, this process can even last up to ten minutes. It will be more effective if instead of merely generating random holograms in the initial process, a set of approximately desired holograms is employed. By doing so, the initial population will contain less trial holograms equivalent to the reduction of the computation time of GA's. Accordingly, a hybrid algorithm that utilizes a trained neural network to initiate the GA's procedure is proposed. Consequently, the initial population contains less random holograms and is compensated by approximately desired holograms. Figure 1 is the flowchart of the hybrid algorithm in comparison with the classical GA. The procedure of synthesizing a hologram on computer is divided into two steps. First the simulation of holograms based on ANN method [1] to acquire approximately desired holograms is carried. With a teaching data set of 9 characters obtained from the classical GA, the number of layer is 3, the number of hidden node is 100, learning rate is 0.3, and momentum is 0.5, the artificial neural network trained enables us to attain the approximately desired holograms, which are fairly good agreement with what we suggested in the theory. The second step, effect of several parameters on the operation of the hybrid algorithm is investigated. In principle, the operation of the hybrid algorithm and GA are the same except the modification of the initial step. Hence, the verified results in Ref [2] of the parameters such as the probability of crossover and mutation, the tournament size, and the crossover block size are remained unchanged, beside of the reduced population size. The reconstructed image of 76.4% diffraction efficiency and 5.4% uniformity is achieved when the population size is 30, the iteration number is 2000, the probability of crossover is 0.75, and the probability of mutation is 0.001. A comparison between the hybrid algorithm and GA in term of diffraction efficiency and computation time is also evaluated as shown in Fig. 2. With a 66.7% reduction in computation time and a 2% increase in diffraction efficiency compared to the GA method, the hybrid algorithm demonstrates its efficient performance. In the optical experiment, the phase holograms were displayed on a programmable phase modulator (model XGA). Figures 3 are pictures of diffracted patterns of the letter "0" from the holograms generated using the hybrid algorithm. Diffraction efficiency of 75.8% and uniformity of 5.8% are measured. We see that the simulation and experiment results are fairly good agreement with each other. In this paper, Genetic Algorithm and Neural Network have been successfully combined in designing CGHs. This method gives a significant reduction in computation time compared to the GA method while still allowing holograms of high diffraction efficiency and uniformity to be achieved. This work was supported by No.mOl-2001-000-00324-0 (2002)) from the Korea Science & Engineering Foundation.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.127-132
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• 2009

We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.47-52
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• 2012

A power amplifier is one of important factors for basestation's efficiency and the researches for efficency enhancement focus Doherty amplifier structure with GaN power devices in these days. A memory effect of Doherty amplifier affect operation characteristics for linearity and efficiency. This paper reports on electrothermal nonlinearity modeling and compensation for GaN Doherty amplifier's distortion. Also this paper reports on the dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. We design distortion model for GaN Doherty amplifier and predistortion compensator for electrothermal memory effect from the proposed behavior model parameters. The simulations was evaluated by ADS Tools and GaN Doherty amplifier with 37dBm. The GaN Doherty amplifier with compensator enhanced about 16dB than without electrothemal memory effect compensator in 2-tone output spectrum.