• 제목/요약/키워드: Fusion bonding

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Thermoplastic Fusion Bonding of UV Modified PMMA Microfluidic Devices (UV 개질된 PMMA 미세유체 장치의 열가소성 폴리머 용융 접합)

  • Park, Taehyun
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.5
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    • pp.441-449
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    • 2014
  • Thermoplastic fusion bonding is widely used to seal polymer microfluidic devices and optimal bonding protocol is required to obtain a successful bonding, strong bonding force without channel deformation. Besides, UV modification of the PMMA (poly-methyl methacrylate) is commonly used for chemical or biological application before the bonding process. However, study of thermal bonding for the UV modified PMMA was not reported yet. Unlike pristine PMMA, the optimal bonding parameters of the UV modified PMMA were $103^{\circ}C$, 71 kPa, and 35 minutes. A very low aspect ratio micro channel (AR=1:100, $20{\mu}m$ depth and $2000{\mu}m$ width) was successfully bonded (over 95%, n>100). Moreover, thermal bonding of multi stack PMMA chips was successfully demonstrated in this study. The results may applicable to fabricate a complex 3 dimensional microchannel networks.

Investigation of Thermal Fusion Bonding and Separation of PMMA Substrates by using Molecular Dynamics Simulations (분자동역학을 이용한 PMMA 평판의 열접합 및 분리에 대한 연구)

  • Yi, Taeil
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.17 no.5
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    • pp.111-116
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    • 2018
  • Thermal fusion bonding is a method to enclose open microchannels fabricated on polymer chips for use in lab-on-a-chip (LOC) devices. Polymethyl methacrylate (PMMA) is utilized in various biomedical-microelectromechanical systems (bio-MEMS) applications, such as medical diagnostic kits, biosensors, and drug delivery systems. These applications utilize PMMAs biochemical compatibility, optical transparency, and mold characteristics. In this paper, we elucidate both the conformational entanglement of PMMA molecules at the contact interfacial regime, and the qualitative nature of the thermal fusion bonding phenomena through systematic molecular dynamics simulations.

p-contact resistivity influence on device-reliability characteristics of GaN-based LEDs (p-contact 저항에 따른 GaN기반 LED의 device-reliability 특성)

  • Park, Min-Jung;Kim, Jin-Chul;Kim, Sei-Min;Jang, Sun-Ho;Park, Il-Kyu;Park, Si-Hyun;Cho, Yong;Jang, Ja-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.159-159
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    • 2010
  • We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

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Construction of Attractor System by Integrity Evaluation of Polyethylene Piping Materials (폴리에틸렌 배관재의 건전성 평가를 위한 어트랙터 시스템의 구축)

  • Taik, Hwang-Yeong;Kyu, Oh-Seung;Won, Yi
    • Proceedings of the KSME Conference
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    • 2001.06a
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    • pp.609-615
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    • 2001
  • This study proposes analysis and evaluation method of time series ultrasonic signal using attractor analysis for fusion joint part of polyethylene piping. Quantitatively characteristics of fusion joint part is analysed features extracted from time series. Trajectory changes in the attractor indicated a substantial difference in fractal characteristics. These differences in characteristics of fusion joint part enables the evaluation of unique characteristics of fusion joint part. In quantitative fractal feature extraction, feature values of 4.291 in the case of debonding and 3.694 in the case of bonding were proposed on the basis of fractal dimensions. In quantitative quadrant feature extraction, 1,306 point in the case of bonding(one quadrant) and 1,209 point(one quadrant) in the case of debonding were proposed on the basis of fractal dimensions. Proposed attractor feature extraction can be used for integrity evaluation of polyethylene piping material which is in case of bonding or debonding.

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High Speed Direct Bonding of Silicon Wafer Using Atmospheric Pressure Plasma (상압 플라즈마를 이용한 고속 실리콘 웨이퍼 직접접합 공정)

  • Cha, Yong-Won;Park, Sang-Su;Shin, Ho-Jun;Kim, Yong Taek;Lee, Jung Hoon;Suh, Il Woong;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.3
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    • pp.31-38
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    • 2015
  • In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.

Heated Tool Bonding of Plastic Pipes

  • Troughton, Mike;Wermelinger, Joerg;Choi, Sunwoong
    • Journal of Adhesion and Interface
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    • v.21 no.1
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    • pp.1-5
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    • 2020
  • Heated tool joining is a popular method for joining parts made from plastics and composite materials. The method is commonly known as butt fusion in the plastic pipe industry and this paper provides a short introduction to the basics of producing a good butt fusion joint. The function of each of the essential parts of the butt fusion equipment is described followed by a presentation of the important parameters of the bonding process in reference to a well-established interfacial pressure versus time curve. The butt fusion procedure is then outlined with good practices that detail the preparation of equipment and pipes to be joined as well as the fusion joining process.

Excited State Dynamics of Curcumin and Solvent Hydrogen Bonding

  • Yang, Il-Seung;Jin, Seung-Min;Kang, Jun-Hee;Ramanathan, Venkatnarayan;Kim, Hyung-Min;Suh, Yung-Doug;Kim, Seong-Keun
    • Bulletin of the Korean Chemical Society
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    • v.32 no.spc8
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    • pp.3090-3093
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    • 2011
  • Curcumin is a natural product with antioxidant, anti-inflammatory, antiviral and antifungal functions. As it is known that the excited state intramolecular hydrogen transfer of curcumin are related to its medicinal antioxidant mechanism, we investigated its excited state dynamics by using femtosecond transient absorption spectroscopy in an effort to understand the molecule's therapeutic effect in terms of its photophysics and photochemistry. We found that stronger intermolecular hydrogen bonding with solvents weakens the intramolecular hydrogen bonding and decelerates the dynamical process of the enolic hydrogen. Exceptions are found in methanol and ethylene glycol due to their nature as simultaneous hydrogen bonding donor-acceptor and high viscosity solvent, respectively.

A Study on the Optimization of IR Laser Flip-chip Bonding Process Using Taguchi Methods (다구찌법을 이용한 IR 레이저 Flip-chip 접합공정 최적화 연구)

  • Song, Chun-Sam;Ji, Hyun-Sik;Kim, Joo-Han;Kim, Jong-Hyeong;Ahn, Hyo-Sok
    • Journal of Welding and Joining
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    • v.26 no.3
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    • pp.30-36
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    • 2008
  • A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.