• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.24 no.2
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• pp.65-71
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• 2018

Paper packs, glass bottles, metal cans, and plastic materials are classified according to packaging material recycling groups that are Extended Producer Responsibility (EPR). In the case of waste paper pack, the compressed cartons are dissociated to separate polyethylene films and other foreign substance, and then these are washed, pulverized and dried to produce toilet paper. Glass bottle for recycling is provided to the bottle manufacturers after the process of collecting the waste glass bottle, removing the foreign substance, sorting by color, crushing, raw materializing process. Waste glass recycling technology of Korea is largely manual, except for removal of metal components and low specific gravity materials. Metal can is classified into iron and aluminum cans through an automatic sorting machine, compressed, and reproduced as iron and aluminum through a blast furnace. In the case of composite plastic material, the selected compressed product is crushed and then recycled through melt molding and refined products are produced through solid fuel manufacturing steps through emulsification and compression molding through pyrolysis. In the recycling process of paper packs, glass bottles, metal cans, and plastic materials, the influx of recycled materials and other substances interferes with the recycling process and increases the recycling cost and time. Therefore, the government needs to improve the legal system which is necessary to use materials and structure that are easy to recycle from the design stage of products or packaging materials.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of Preventive Medicine and Public Health
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• v.23 no.3 s.31
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• pp.358-368
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• 1990

To investigate the possibility of utilizing of sister chromatid exchange(SCE) analysis in lymphocytes as an indicator which could evaluate the effects of mutagenicity after in vivo exposure to hexavalent chromium, this study was conducted using some of chromium plating workers occupationally exposed to hexavalent chromium, chromium trioxide ($CrO_3$) in Taegu city. The study population was 12 Cr platers with perforation of nasal septum, 12 Cr platers without perforation of nasal septum and 20 controls. The SCE in peripheral blood lymphocytes of the subjects was analyzed and blood chromium concentration was estimated using the atomic absorption spectrophotometer (IL551) equipped with furnace atomizer (IL755). The mean SCE frequencies for Cr platers with and without perforation of nasal septum were statistically higher than those for control. The difference in SCE frequencies by age, smoking habits were not statistically significant both in Cr platers and controls. There was no difference in SCE frequencies by career of Cr platers workers. In Cr platers, the correlation between the mean SCE frequencies and chromium concentration in blood was not statistically significant. Using the transformation $y=(sum\;SCE)^{\frac{1}{2}}+(sum\;SCE+1)^{\frac{1}{2}}$, when the data was studied by multiple regression, it appeared that the influence of the occupation was the most important. Age, smoking, occupation and CrB(blood chromium concentration) together explain only 32.3% of interpersonal variation on SCE. The results in this study suggest tt a genetic risk due to occupationally exposure to hexavalent chromium is clearly inferable and thus, SCE analysis in human lymphocytes may be used indicator of biological toxic effects of chromium. Further, populatio analysis stuies are required before SCE frequency can be used as a mutagenic indicator in human population.

• Journal of Food Hygiene and Safety
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• v.21 no.2
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• pp.82-91
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• 2006

Standard and lead limit test in general test method of Korea, Japan, Joint FAO/WHO Expert Committee of Food Additives (JECFA), USA, and EU on synthetic and natural food additives were compared. There were found that the general test methods in 'Korea Food Additives Code' were different from standards of various institutes on lead limit test. For the lead limit test of food additives, Korea used dithizone method, Japan used atomic absorption spectrophotometry, and USA used dithizone method, flame atomic absorption spectrophotometric method, atomic absorption spectrophotometric graphite furnace method, and APDC extraction method. In addition, JECFA and EU used dithizone method and atomic absorption spectrophotometric method. The dithizone methods of Korea, USA, and JECFA were nearly identical. In the case of USA, JECFA, and EU, the analytical methods for lead limit test were shown in individual monograph. Lead limit test against 13 synthetic, such as magnesium stearate and L-cystine, and 12 natural, such as gua gum and diatomaceous earth, food additives distributed in Korea were performed by the analytical method of each institute. Although all institutes use various methods for analysis of lead, contents of lead in food additives tested fell into the standard of each institute.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.494-500
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• 2003

The effects of $Al_2$O$_3$ addition upon the sintering range of clay-EAF dust (the specified wastes produced from steel making process) system body which would be used as a constructing bricks were investigated. The slope of apparent density to sintering temperature decreased for Clay-dust body containing 5~15 wt% A1203 sintered at 1200-125$0^{\circ}C$, and the absorption(%) of specimen sintered above 125$0^{\circ}C$ decreased due to the formation of open pores produced by pore bloating. For the specimen without any $Al_2$O$_3$ addition sintered at 1275$^{\circ}C$, the major phase was cristobalite, the small amount of mullite (3Al$_2$O$_3$ 2SiO$_2$) formed and the hematite (Fe$_2$O$_3$) remained. In the Clay-dust system body containing $Al_2$O$_3$ 15 wt%, however, the cristobalite disappeared and the major phase was mullite. Also the part of $Al_2$O$_3$ reacted with hematite to form hercynite (FeAl$_2$O$_4$). From the these results, addition of $Al_2$O$_3$ to Clay-dust system body enlarges a sintering range; decreasing an apparent density and absorption slop to sintering temperature owing to consumption of liquid phase SiO$_2$ at higher temperature and gas-forming component Fe$_2$O$_3$ at reduced atmosphere which would decrease an amount of liquid formed and increase the viscosity of the liquid produced during the sintering process.

• Journal of Dental Rehabilitation and Applied Science
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• v.33 no.2
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• pp.71-79
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• 2017

Purpose: Ni-Cr alloy does not contain Beryllium, causing the metal compound to form oxides in the furnace but by using Titanium as a chemical catalyst the forming of the oxides can be controlled, and by controlling the impurities formed on the metal surface, the possibility of the Ni-Cr alloy bond strength being increased can be analysed. Materials and Methods: Titanium was used as a chemical catalyst in the porcelain for the oxidation of beryllium-free metal (Ni-Cr) alloy. The T1 group, which does not use Titanium power as a chemical catalyst is a reference model for comparison. The T2 group and T3 group used 10 g and 20 g of Titanium power, respectively. They are fabricated to observe the shear bond strength and surface properties. There was no significance when One-way ANOVA analysis/Tukey Honestly Significant Difference Test was conducted for statistical analysis among groups (P > 0.05). Results: Results of measuring the three-point flexural bond strength of the Ni-Cr alloy and thickness of the oxide film. Experiment T3 using 20 g Titanium chemical catalyst: $39.22{\pm}3.41MPa$ and $6.66{\mu}m$, having the highest bond strength and thinness of oxide film. Experiment T2 using 10 g Titanium chemical catalyst: $34.65{\pm}1.39MPa$ and $13.22{\mu}m$. Experiment T1 using no Titanium chemical catalyst: $32.37{\pm}1.91MPa$ and $22.22{\mu}m$. Conclusion: The T2 and T3 experiments using Titanium chemical catalyst showed higher bond strength for the Ni-Cr alloy and lower thickness of oxide film than experiment T1, and the titanium catalyst being able to increase bond strength was observed.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of Preventive Medicine and Public Health
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• v.29 no.3 s.54
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• pp.693-700
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• 1996

The purpose of this study was to determine whether workers at a factory next to a lead recycling factory in Pusan, were affected by lead contamination. The mean air lead concentration of lead recycling factory was $0.21mg/m^3(TWA=0.05mg/m^3)$. Thirty-nine male workers of Factory A, Cr. plating factory next to the lead recycling factory were exposed group and a comparison group, 62 male workers of Factory B were selected from another Cr. plating factory about 8.5km away from lead recycling factory. Air lead concentration of each workplace was checked for 4 times from August f to August 20 in 1995 by low volume air sampler. Each subject was interviewed about age, life-style, smoking, work history, and residence etc, and venous blood was drawn for lead measurement by graphite furnace atomic absorption spectrometry. We have observed that air lead concentration and blood lead concentration of Factory A was higher than Factory $B(2.6{\pm}1.6\;Vs.\;1.2{\pm}0.2{\mu}g/m^3,\;14.9{\pm}1.6\;Vs.\;12.2{\pm}1.6{\mu}g/dl)$. We believe that other environmental lead sources such as transportation and residence did not affect air lead and blood lead concentration differences of both factory. We concluded that high air lead and blood lead concentration of Factory A were caused by lead contamination generated by the neighboring lead recycling factory.