• Title/Summary/Keyword: Fringing field

Search Result 29, Processing Time 0.026 seconds

구면사각패치 마이크로스트립 공진기 해석 (Analysis of the Spherical-Rectangular Patch Microstrip Resonator)

  • 양두영;이상설
    • 대한전자공학회논문지
    • /
    • 제27권11호
    • /
    • pp.25-31
    • /
    • 1990
  • 공진기(cavity)이론을 적용하여 등각면을 이루는 구면사각패치 마이크로스트립 공진기를 해석한다. 후린징전자계(fringing field) 때문에 발생되는 공진주파수의 오차를 줄이기 위하여 실효유전상수를 고려하여 공진주파수를 계산한다. 해석된 결과식에 따라 Epsilam 10기판으로 3GHz에서 동작하는 전송형 구면사각패치 마이크로스트립 공진기를 설계 제작하였다. 측정 결과는 공진주파수 2.985GHz, 반사손실 -44.4dB로써 이론값과 거의 일치하였다.

  • PDF

넓은 면 결합 Suspended Substrate Stripline을 이용한 직렬 커패시터의 구현 (The Realization of Series Capacitor Using Broadside Coupled Suspended Substrate Stripline(BCSSS))

  • 김인선
    • 한국전자파학회논문지
    • /
    • 제17권10호
    • /
    • pp.935-942
    • /
    • 2006
  • 본 논문에서는 직렬 커패시터를 넓은 면 결합 SSS로 구현하는 새로운 이론이 제안되었다. 제안된 이론은 기모드 해석 방법만이 적용되었기 때문에 비교적 단순하지만 선로의 프린징 전자장 영향에 의한 유효 선로 폭과 선로 끝 효과를 고려함으로서 신뢰할 만한 결과를 제공한다. 이상적인 집중 소자 커패시터와 결합 선로 커패시터의 특성을 비교, 분석하기 위해 시뮬레이션 결과가 제시되었다. 또한 제안한 이론을 근거로 하여 커패시티브갭 결합 선로 대역 통과 필터가 설계 및 제작되었고, 그 결과로부터 이론의 타당성이 검증되었다.

Simplified 2-D Analytical Model for Winding Loss Analysis of Flyback Transformers

  • Zhang, Junming;Yuan, Wei;Zeng, Hulong;Qian, Zhaoming
    • Journal of Power Electronics
    • /
    • 제12권6호
    • /
    • pp.960-973
    • /
    • 2012
  • The winding loss analysis of a flyback transformer is difficult and ambiguous because the primary side current and the secondary side current differs both in shape and phase, especially for DCM (Discontinuous Conduction Mode) operation. Meanwhile, the fringing field caused by the air gaps further makes the traditional 1-D loss analysis model not directly applicable. The paper gives a thorough investigation into the phase shift of winding currents, which indicates that the phase shift of the high order harmonics is still close to $180^{\circ}$ out-of-phase. Based on the analysis, a simplified 2-D winding loss analytical model for flyback transformers considering the effects of low order harmonics is proposed. By neglecting the y components of the fringing field, the proposed model has an acceptable accuracy and a simple form that is similar to the conventional 1-D model. The power loss calculated with the proposed analysis model is verified by FEA (Finite Element Analysis) simulations and experimental results.

Sawtooth Fingered Comb Drive Actuator for Greater Displacement

  • Ha Sang Wook;Oh Sang-Woo;Hahm Ju-Hee;Kim Kwon Hee;Pak James Jungho
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • 제5C권6호
    • /
    • pp.264-269
    • /
    • 2005
  • The electrostatic comb drive actuator is one of the main building blocks in the field of micro electro-mechanical systems (MEMS). Most of the comb actuators presented previously have fingers that are rectangular in shape which produce a stable, constant force output during actuation. The use of sawtooth fixed fingers in a comb drive, which were presumed to produce an increasing force output with displacement due to the increased number of regions where fringing force, the driving force of comb actuators, appear. The dimensions of the sawtooth were derived from finite element analysis (FEA) of simplified finger models with sawtooth type fingers of various dimension and were compared to the rectangular finger model that showed that the sawtooth type fingers have $7\~9$ times stronger driving force. Finally, comb drive actuators with sawtooth type and rectangular fingers were fabricated and although the gap was bigger, the comb actuator with sawtooth type fingers showed about 1.7 times greater electrostatic force than the one with rectangular fingers at equal driving voltages. In conclusion, using the proposed sawtooth type comb fingers in a comb drive makes it possible to increase its displacement or reduce the driving voltage.

소형 마이크로 스트립 패치안테나 (A Small Microstrip Patch Antenna)

  • 장순범;박동국
    • 한국전자파학회:학술대회논문집
    • /
    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
    • /
    • pp.246-249
    • /
    • 2002
  • In this paper, a rectangular patch antenna is miniaturized by changing tile middle of patch into narrow microstrip line except the edges of the patch where the fringing field occurs. Miniaturizing rate, gain, radiation patterns of suggested antennas were compared with general square microstrip antenna by using simulator Ensemble. As a result, it reduces the size of antenna by 30% and improves the characteristic of X pol as a advantage while it reduces gain and bandwidth.

  • PDF

근거리장에서 NFS를 사용한 차폐효율 평가방법에 관한 연구 (A Study on the Evaluation Method of Shielding Effectiveness using NFS in Near-Field Tests)

  • 박정열;송인채;김부균;김은하
    • 전자공학회논문지
    • /
    • 제53권8호
    • /
    • pp.76-82
    • /
    • 2016
  • 본 논문에서는 근거리장에서 NFS(near field scanning)를 사용한 차폐효율 평가 방법을 통해 CNT(carbon nanotube) 필름의 차폐 특성을 분석하였다. 차폐 특성 평가는 농도 5%와 1mm의 두께를 가지는 CNT 필름과 실제 IC package를 모사한 테스트쿠폰을 사용하여 CNT 필름과 테스트쿠폰과의 거리에 따른 전자파 차폐효율 및 측정 위치에 따른 차폐효율을 측정하였다. 그 결과 근거리장에서 측정된 차폐효율은 주파수에 따라 차폐효율이 달랐다. 테스트쿠폰의 중심에서 측정된 전기장 차폐효율은 fringing effect의 영향을 받는 패턴경계보다 전기장 차폐효율이 좋은 것으로 측정되었다. 이는 근거리장에서 측정된 차폐효율은 주파수뿐만 아니라 CNT 필름과 측정 프로브의 높이, 측정 위치와 같은 측정 환경에 영향을 받는 것을 보여준다. 결론적으로 근거리장에서 제안된 방법을 사용하여 측정한 차폐효율과 ASTM D 4935-10에 의해 측정된 차폐효율은 연관성을 찾기 어렵기 때문에 전장 시스템의 거리 영역에 따라 적절한 측정 방법을 고려하여 측정해야 한다.

전자빔 가공기용 자기 렌즈의 자기장 제어구조 설계 (Design and Analysis of Magnetic Field Control in Electron Lenses for a E-Beam Writer)

  • 노승국;이찬홍;백영종
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2004년도 추계학술대회 논문집
    • /
    • pp.401-404
    • /
    • 2004
  • The electron beam machining provides very high resolution up to nanometer scale, hence the E-beam writing technology is rapidly growing in MEMS and nano-engineering areas. In the optical column of the e-beam writer, there are several lenses condensing and focusing electron beams from electron gun with fringing magnetic fields. To achieve small spot size as 1-2 nm for higher power of electron beam, magnetic lenses should be designed considering their magnetic field distribution. In this paper, the magnetic field at two condenser lenses and object lens are calculated with finite element method and discussed its performances.

  • PDF

고온초전도 마이크로스트립 패치 안테나의 근거리 전자장 해석 (Near electromagnetic field analysis of HTS microstrip patch antenna)

  • 정동철;허원일;김민기;한태희;한병성
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제9권8호
    • /
    • pp.783-788
    • /
    • 1996
  • In this paper, the high-$T_c$ , superconductor (HTS) microstrip patch antenna which is directly coupled to a microstrip transmission line is designed and the numerical solution which evaluate near electromagnetic field of HTS antenna is presented. This solution uses the interpolation function with the vector edge triangular element. The advantage of this element is the elimination of spurious solutions attributed to the lack of enforcement of the divergence condition. The results of this method have a good agreement with $TM_10$ mode in HTS microstrip patch antenna and show that the computation of resonant length considering the fringing capacitance effect at radiating edge are proper.

  • PDF

PCB선로의 끝단효과에 의한 특성임피던스 및 전자계분포에 관한 연구 (A Study on Characteristic Impedance and Electromagnetic Distribution by the Edge Effect of Printed Cicuit Board Line)

  • 장인범;박건호;이수길;김성렬;김용주;김영천;이준웅
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
    • /
    • pp.323-325
    • /
    • 1997
  • Conventionally it is asummed that the microstrip line conductor has a rectangular cross-section. but the additive and substactive processes used to create conductors for PCBs produce a conductor of approximately Trapezoidal cross-section. For wide Strip line, the thickness and edge effect will be small since most of capacitance is parallel plate rather than fringing and we can ignore the cross-section. For narrow strip lines, the edge effect become immportant. So in this paper, we measure the chracteristic impedance of microstripline by Vector Analyzer and simulate the electromagnetic field of microstripline using finite element method with edge angle.

  • PDF

Analysis of Quantum Effects Concerning Ultra-thin Gate-all-around Nanowire FET for Sub 14nm Technology

  • 이한결;김성연;박재혁
    • EDISON SW 활용 경진대회 논문집
    • /
    • 제4회(2015년)
    • /
    • pp.357-364
    • /
    • 2015
  • In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

  • PDF